Early learning on hyper-NA lithography using two-beam immersion interference
- Author
- Eric Hendrickx, Maaike Op de Beeck (UGent) , Roel Gronheid, Janko Versluijs, Lieve Van Look, Monique Ercken and Geert Vandenberghe
- Organization
- Abstract
- Two-beam interference of 193nm laser light can print dense line-space patterns in photoresist, down to a resolution that can only be obtained using hyper-NA scanners, and allows for early learning on hyper-NA imaging and process development. For this purpose, a dedicated two-beam interference immersion printer, operating at 193nm wavelength, was installed in the IMEC cleanroom. The interference printer consistently generates L/S patterns at 130nm, 90nm, and 72nm pitch with exposure latitudes in the 12-26% range (when using TE-polarized light). At these pitches, process and imaging issues have been Studied that are of direct interest for hyper-NA lithography. On the imaging side, we discuss the flexibility of the printer towards working with various polarizations. We show how reflection reduction strategies at the high incidence angles of hyper-NA imaging can be tested in the interference printer. On the processing side, we have screened a number of resists at 90nm pitch. A methodology to study static and dynamic leaching was developed. Several liquids with refractive index > 1.6 are Currently being developed as potential candidates to replace water for optical lithography at 38nm half-pitch. We have used the interference printer at 72nm pitch, with both water and liquids of refractive index 1.65.
- Keywords
- 193 NM, optical lithography, interferometric imaging, high-index liquids, polarization, leaching, hyper-NA process development
Citation
Please use this url to cite or link to this publication: http://hdl.handle.net/1854/LU-8530719
- MLA
- Hendrickx, Eric, et al. “Early Learning on Hyper-NA Lithography Using Two-Beam Immersion Interference.” OPTICAL MICROLITHOGRAPHY XIX, PTS 1-3, vol. 6154, Spie-int Soc Optical Engineering, 2006, pp. U1143–53, doi:10.1117/12.659007.
- APA
- Hendrickx, E., Op de Beeck, M., Gronheid, R., Versluijs, J., Van Look, L., Ercken, M., & Vandenberghe, G. (2006). Early learning on hyper-NA lithography using two-beam immersion interference. OPTICAL MICROLITHOGRAPHY XIX, PTS 1-3, 6154, U1143–U1153. https://doi.org/10.1117/12.659007
- Chicago author-date
- Hendrickx, Eric, Maaike Op de Beeck, Roel Gronheid, Janko Versluijs, Lieve Van Look, Monique Ercken, and Geert Vandenberghe. 2006. “Early Learning on Hyper-NA Lithography Using Two-Beam Immersion Interference.” In OPTICAL MICROLITHOGRAPHY XIX, PTS 1-3, 6154:U1143–53. Bellingham: Spie-int Soc Optical Engineering. https://doi.org/10.1117/12.659007.
- Chicago author-date (all authors)
- Hendrickx, Eric, Maaike Op de Beeck, Roel Gronheid, Janko Versluijs, Lieve Van Look, Monique Ercken, and Geert Vandenberghe. 2006. “Early Learning on Hyper-NA Lithography Using Two-Beam Immersion Interference.” In OPTICAL MICROLITHOGRAPHY XIX, PTS 1-3, 6154:U1143–U1153. Bellingham: Spie-int Soc Optical Engineering. doi:10.1117/12.659007.
- Vancouver
- 1.Hendrickx E, Op de Beeck M, Gronheid R, Versluijs J, Van Look L, Ercken M, et al. Early learning on hyper-NA lithography using two-beam immersion interference. In: OPTICAL MICROLITHOGRAPHY XIX, PTS 1-3. Bellingham: Spie-int Soc Optical Engineering; 2006. p. U1143–53.
- IEEE
- [1]E. Hendrickx et al., “Early learning on hyper-NA lithography using two-beam immersion interference,” in OPTICAL MICROLITHOGRAPHY XIX, PTS 1-3, San Jose, CA, 2006, vol. 6154, pp. U1143–U1153.
@inproceedings{8530719, abstract = {{Two-beam interference of 193nm laser light can print dense line-space patterns in photoresist, down to a resolution that can only be obtained using hyper-NA scanners, and allows for early learning on hyper-NA imaging and process development. For this purpose, a dedicated two-beam interference immersion printer, operating at 193nm wavelength, was installed in the IMEC cleanroom. The interference printer consistently generates L/S patterns at 130nm, 90nm, and 72nm pitch with exposure latitudes in the 12-26% range (when using TE-polarized light). At these pitches, process and imaging issues have been Studied that are of direct interest for hyper-NA lithography. On the imaging side, we discuss the flexibility of the printer towards working with various polarizations. We show how reflection reduction strategies at the high incidence angles of hyper-NA imaging can be tested in the interference printer. On the processing side, we have screened a number of resists at 90nm pitch. A methodology to study static and dynamic leaching was developed. Several liquids with refractive index > 1.6 are Currently being developed as potential candidates to replace water for optical lithography at 38nm half-pitch. We have used the interference printer at 72nm pitch, with both water and liquids of refractive index 1.65.}}, articleno = {{61541X}}, author = {{Hendrickx, Eric and Op de Beeck, Maaike and Gronheid, Roel and Versluijs, Janko and Van Look, Lieve and Ercken, Monique and Vandenberghe, Geert}}, booktitle = {{OPTICAL MICROLITHOGRAPHY XIX, PTS 1-3}}, isbn = {{0-8194-6197-0}}, issn = {{0277-786X}}, keywords = {{193 NM,optical lithography,interferometric imaging,high-index liquids,polarization,leaching,hyper-NA process development}}, language = {{eng}}, location = {{San Jose, CA}}, pages = {{61541X:U1143--61541X:U1153}}, publisher = {{Spie-int Soc Optical Engineering}}, title = {{Early learning on hyper-NA lithography using two-beam immersion interference}}, url = {{http://doi.org/10.1117/12.659007}}, volume = {{6154}}, year = {{2006}}, }
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