Academic Bibliography

 Search 200 years of publications by Ghent University researchers.
Advanced search
1 file | 1.27 MB
Add to list
  1. Search results
  2. Carbon-related defects in Si:C/silico...

Carbon-related defects in Si:C/silicon heterostructures assessed by deep-level transient spectroscopy

Eddy Simoen (UGent) , SK Dhayalan, A Hikavyy, R Loo, E Rosseel, Henk Vrielinck (UGent) and Johan Lauwaert (UGent)
(2017) ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY. 6(5). p.P284-P289
Author
Organization
Abstract
This paper reports on a Deep-Level Transient Spectroscopy (DLTS) study of the electrically active defects in similar to 100 nm Si: C stressors, formed by chemical vapor deposition on p-type Czochralski silicon substrates. In addition, the impact of a post-deposition Rapid Thermal Annealing (RTA) at 850 degrees C on the DLT-spectra is investigated. It is shown that close to the surface at least two types of hole traps are present: one kind exhibiting slow hole capture, which may have a partial extended defect nature and a second type of hole trap behaving like a point defect. RTA increases the concentration of both hole traps and, in addition, introduces a point defect at EV + 0.35 eV in the depletion region of the silicon substrate at some distance from the Si: C epi layer. This level most likely corresponds with CiOi-related centers. Finally, a negative feature is found systematically for larger reverse bias pulses, which could point to a response of trap states at the Si: C/silicon hetero-interface.
Keywords
IRRADIATED SILICON, IMPLANTED CARBON, SOURCE/DRAIN, ENHANCEMENT, DEPOSITION, STRESSORS, EVOLUTION, FINFETS, MOSFET, S/D

Downloads

  • Download
    SSST-Si-C-may 17.pdf
    • full text
    • |
    • open access
    • |
    • PDF
    • |
    • 1.27 MB

Citation

Please use this url to cite or link to this publication:

MLA
Simoen, Eddy, et al. “Carbon-Related Defects in Si:C/Silicon Heterostructures Assessed by Deep-Level Transient Spectroscopy.” ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, vol. 6, no. 5, 2017, pp. P284–89, doi:10.1149/2.0211705jss.
APA
Simoen, E., Dhayalan, S., Hikavyy, A., Loo, R., Rosseel, E., Vrielinck, H., & Lauwaert, J. (2017). Carbon-related defects in Si:C/silicon heterostructures assessed by deep-level transient spectroscopy. ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 6(5), P284–P289. https://doi.org/10.1149/2.0211705jss
Chicago author-date
Simoen, Eddy, SK Dhayalan, A Hikavyy, R Loo, E Rosseel, Henk Vrielinck, and Johan Lauwaert. 2017. “Carbon-Related Defects in Si:C/Silicon Heterostructures Assessed by Deep-Level Transient Spectroscopy.” ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY 6 (5): P284–89. https://doi.org/10.1149/2.0211705jss.
Chicago author-date (all authors)
Simoen, Eddy, SK Dhayalan, A Hikavyy, R Loo, E Rosseel, Henk Vrielinck, and Johan Lauwaert. 2017. “Carbon-Related Defects in Si:C/Silicon Heterostructures Assessed by Deep-Level Transient Spectroscopy.” ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY 6 (5): P284–P289. doi:10.1149/2.0211705jss.
Vancouver
1.
Simoen E, Dhayalan S, Hikavyy A, Loo R, Rosseel E, Vrielinck H, et al. Carbon-related defects in Si:C/silicon heterostructures assessed by deep-level transient spectroscopy. ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY. 2017;6(5):P284–9.
IEEE
[1]
E. Simoen et al., “Carbon-related defects in Si:C/silicon heterostructures assessed by deep-level transient spectroscopy,” ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, vol. 6, no. 5, pp. P284–P289, 2017.
@article{8517706,
  abstract     = {{This paper reports on a Deep-Level Transient Spectroscopy (DLTS) study of the electrically active defects in similar to 100 nm Si: C stressors, formed by chemical vapor deposition on p-type Czochralski silicon substrates. In addition, the impact of a post-deposition Rapid Thermal Annealing (RTA) at 850 degrees C on the DLT-spectra is investigated. It is shown that close to the surface at least two types of hole traps are present: one kind exhibiting slow hole capture, which may have a partial extended defect nature and a second type of hole trap behaving like a point defect. RTA increases the concentration of both hole traps and, in addition, introduces a point defect at EV + 0.35 eV in the depletion region of the silicon substrate at some distance from the Si: C epi layer. This level most likely corresponds with CiOi-related centers. Finally, a negative feature is found systematically for larger reverse bias pulses, which could point to a response of trap states at the Si: C/silicon hetero-interface.}},
  author       = {{Simoen, Eddy and Dhayalan, SK and Hikavyy, A and Loo, R and Rosseel, E and Vrielinck, Henk and Lauwaert, Johan}},
  issn         = {{2162-8769}},
  journal      = {{ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY}},
  keywords     = {{IRRADIATED SILICON,IMPLANTED CARBON,SOURCE/DRAIN,ENHANCEMENT,DEPOSITION,STRESSORS,EVOLUTION,FINFETS,MOSFET,S/D}},
  language     = {{eng}},
  number       = {{5}},
  pages        = {{P284--P289}},
  title        = {{Carbon-related defects in Si:C/silicon heterostructures assessed by deep-level transient spectroscopy}},
  url          = {{http://doi.org/10.1149/2.0211705jss}},
  volume       = {{6}},
  year         = {{2017}},
}
Altmetric
View in Altmetric
Web of Science
Times cited: