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Carbon-related defects in Si:C/silicon heterostructures assessed by deep-level transient spectroscopy

Eddy Simoen UGent, SK Dhayalan, A Hikavyy, R Loo, E Rosseel, Henk Vrielinck UGent and Johan Lauwaert UGent (2017) ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY. 6(5). p.P284-P289
Please use this url to cite or link to this publication:
author
organization
year
type
journalArticle (original)
publication status
published
subject
journal title
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY
ECS J. Solid State Sci. Technol.
volume
6
issue
5
pages
P284 - P289
ISSN
2162-8769
DOI
10.1149/2.0211705jss
language
English
UGent publication?
yes
classification
A1
copyright statement
Creative Commons Attribution 4.0 International Public License (CC-BY 4.0)
id
8517706
handle
http://hdl.handle.net/1854/LU-8517706
date created
2017-04-13 14:11:46
date last changed
2017-09-07 13:24:22
@article{8517706,
  author       = {Simoen, Eddy and Dhayalan, SK and Hikavyy, A and Loo, R and Rosseel, E and Vrielinck, Henk and Lauwaert, Johan},
  issn         = {2162-8769},
  journal      = {ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY},
  language     = {eng},
  number       = {5},
  pages        = {P284--P289},
  title        = {Carbon-related defects in Si:C/silicon heterostructures assessed by deep-level transient spectroscopy},
  url          = {http://dx.doi.org/10.1149/2.0211705jss},
  volume       = {6},
  year         = {2017},
}

Chicago
Simoen, Eddy, SK Dhayalan, A Hikavyy, R Loo, E Rosseel, Henk Vrielinck, and Johan Lauwaert. 2017. “Carbon-related Defects in Si:C/silicon Heterostructures Assessed by Deep-level Transient Spectroscopy.” Ecs Journal of Solid State Science and Technology 6 (5): P284–P289.
APA
Simoen, Eddy, Dhayalan, S., Hikavyy, A., Loo, R., Rosseel, E., Vrielinck, H., & Lauwaert, J. (2017). Carbon-related defects in Si:C/silicon heterostructures assessed by deep-level transient spectroscopy. ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 6(5), P284–P289.
Vancouver
1.
Simoen E, Dhayalan S, Hikavyy A, Loo R, Rosseel E, Vrielinck H, et al. Carbon-related defects in Si:C/silicon heterostructures assessed by deep-level transient spectroscopy. ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY. 2017;6(5):P284–P289.
MLA
Simoen, Eddy, SK Dhayalan, A Hikavyy, et al. “Carbon-related Defects in Si:C/silicon Heterostructures Assessed by Deep-level Transient Spectroscopy.” ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY 6.5 (2017): P284–P289. Print.