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Carbon-related defects in Si:C/silicon heterostructures assessed by deep-level transient spectroscopy

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Abstract
This paper reports on a Deep-Level Transient Spectroscopy (DLTS) study of the electrically active defects in similar to 100 nm Si: C stressors, formed by chemical vapor deposition on p-type Czochralski silicon substrates. In addition, the impact of a post-deposition Rapid Thermal Annealing (RTA) at 850 degrees C on the DLT-spectra is investigated. It is shown that close to the surface at least two types of hole traps are present: one kind exhibiting slow hole capture, which may have a partial extended defect nature and a second type of hole trap behaving like a point defect. RTA increases the concentration of both hole traps and, in addition, introduces a point defect at EV + 0.35 eV in the depletion region of the silicon substrate at some distance from the Si: C epi layer. This level most likely corresponds with CiOi-related centers. Finally, a negative feature is found systematically for larger reverse bias pulses, which could point to a response of trap states at the Si: C/silicon hetero-interface.
Keywords
IRRADIATED SILICON, IMPLANTED CARBON, SOURCE/DRAIN, ENHANCEMENT, DEPOSITION, STRESSORS, EVOLUTION, FINFETS, MOSFET, S/D

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Citation

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Chicago
Simoen, Eddy, SK Dhayalan, A Hikavyy, R Loo, E Rosseel, Henk Vrielinck, and Johan Lauwaert. 2017. “Carbon-related Defects in Si:C/silicon Heterostructures Assessed by Deep-level Transient Spectroscopy.” Ecs Journal of Solid State Science and Technology 6 (5): P284–P289.
APA
Simoen, Eddy, Dhayalan, S., Hikavyy, A., Loo, R., Rosseel, E., Vrielinck, H., & Lauwaert, J. (2017). Carbon-related defects in Si:C/silicon heterostructures assessed by deep-level transient spectroscopy. ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 6(5), P284–P289.
Vancouver
1.
Simoen E, Dhayalan S, Hikavyy A, Loo R, Rosseel E, Vrielinck H, et al. Carbon-related defects in Si:C/silicon heterostructures assessed by deep-level transient spectroscopy. ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY. 2017;6(5):P284–P289.
MLA
Simoen, Eddy, SK Dhayalan, A Hikavyy, et al. “Carbon-related Defects in Si:C/silicon Heterostructures Assessed by Deep-level Transient Spectroscopy.” ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY 6.5 (2017): P284–P289. Print.
@article{8517706,
  abstract     = {This paper reports on a Deep-Level Transient Spectroscopy (DLTS) study of the electrically active defects in similar to 100 nm Si: C stressors, formed by chemical vapor deposition on p-type Czochralski silicon substrates. In addition, the impact of a post-deposition Rapid Thermal Annealing (RTA) at 850 degrees C on the DLT-spectra is investigated. It is shown that close to the surface at least two types of hole traps are present: one kind exhibiting slow hole capture, which may have a partial extended defect nature and a second type of hole trap behaving like a point defect. RTA increases the concentration of both hole traps and, in addition, introduces a point defect at EV + 0.35 eV in the depletion region of the silicon substrate at some distance from the Si: C epi layer. This level most likely corresponds with CiOi-related centers. Finally, a negative feature is found systematically for larger reverse bias pulses, which could point to a response of trap states at the Si: C/silicon hetero-interface.},
  author       = {Simoen, Eddy and Dhayalan, SK and Hikavyy, A and Loo, R and Rosseel, E and Vrielinck, Henk and Lauwaert, Johan},
  issn         = {2162-8769},
  journal      = {ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY},
  keyword      = {IRRADIATED SILICON,IMPLANTED CARBON,SOURCE/DRAIN,ENHANCEMENT,DEPOSITION,STRESSORS,EVOLUTION,FINFETS,MOSFET,S/D},
  language     = {eng},
  number       = {5},
  pages        = {P284--P289},
  title        = {Carbon-related defects in Si:C/silicon heterostructures assessed by deep-level transient spectroscopy},
  url          = {http://dx.doi.org/10.1149/2.0211705jss},
  volume       = {6},
  year         = {2017},
}

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