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RELAXED LATTICE-MISMATCHED GROWTH OF III-V SEMICONDUCTORS

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Abstract
The fast increase in complexity of electronic and optoelectronic systems has created a need for high performance and multifunctional integrated circuits. One of the major restrictions is the lattice matching condition which severely limits the number of possible material combinations that can be used. This paper will review recent developments in the relaxed combination of III-V semiconductors with lattice mismatched substrates. Emphasis will be put on the problems encountered, the possible solutions and the device applications. The material combinations which will be discussed are: GaAs/AlGaAs on Si and InP substrates and InP/InGaAsP on Si and GaAs substrates.
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Chicago
Demeester, Piet, Ann Ackaert, Geert Coudenys, Ingrid Moerman, Luc Buydens, Ivan Pollentier, and Peter Van Daele. 1991. “Relaxed Lattice-mismatched Growth of Iii-v Semiconductors.” Progress in Crystal Growth and Characterization of Materials 22 (1-2): 53–141.
APA
Demeester, P., Ackaert, A., Coudenys, G., Moerman, I., Buydens, L., Pollentier, I., & Van Daele, P. (1991). RELAXED LATTICE-MISMATCHED GROWTH OF III-V SEMICONDUCTORS. PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS, 22(1-2), 53–141.
Vancouver
1.
Demeester P, Ackaert A, Coudenys G, Moerman I, Buydens L, Pollentier I, et al. RELAXED LATTICE-MISMATCHED GROWTH OF III-V SEMICONDUCTORS. PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS. 1991;22(1-2):53–141.
MLA
Demeester, Piet et al. “Relaxed Lattice-mismatched Growth of Iii-v Semiconductors.” PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS 22.1-2 (1991): 53–141. Print.
@article{8516267,
  abstract     = {The fast increase in complexity of electronic and optoelectronic systems has created a need for high performance and multifunctional integrated circuits.  One of the major restrictions is the lattice matching condition which severely limits the number of possible material combinations that can be used.  This paper will review recent developments in the relaxed combination of III-V semiconductors with lattice mismatched substrates.  Emphasis will be put on the problems encountered, the possible solutions and the device applications.  The material combinations which will be discussed are:  GaAs/AlGaAs on Si and InP substrates and InP/InGaAsP on Si and GaAs substrates.},
  author       = {Demeester, Piet and Ackaert, Ann and Coudenys, Geert and Moerman, Ingrid and Buydens, Luc and Pollentier, Ivan and Van Daele, Peter},
  issn         = {0146-3535},
  journal      = {PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS},
  keywords     = {IBCN},
  language     = {eng},
  number       = {1-2},
  pages        = {53--141},
  title        = {RELAXED LATTICE-MISMATCHED GROWTH OF III-V SEMICONDUCTORS},
  url          = {http://dx.doi.org/10.1016/0960-8974(91)90025-8},
  volume       = {22},
  year         = {1991},
}

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