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INFLUENCE OF GAS MIXING ON THE LATERAL UNIFORMITY IN HORIZONTAL MOVPE REACTORS

(1991) JOURNAL OF CRYSTAL GROWTH. 107(1-4). p.175-180
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Organization
Abstract
Two novel gas mixing devices, which can be easily implemented in a horizonatal MOVPE reactor, have been designed in order to achieve better thickness and composition uniformity for both GaAs/AlGaAs and InGaAs/InP layerstructures. In this paper we have used periodic multilayer structures and single layers to investigate thickness respectively composition uniformity. Thickness variations smaller than 1.5% (standard deviation) over a whole 2 inch wafer can be achieved. The standard deviation of a 2 inch wafer covered with InGaAs is as good as 1.4 X 10(-4) for the mismatch and 2.9 nm for the PL peak wavelength.
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MLA
Moerman, Ingrid et al. “Influence of Gas Mixing on the Lateral Uniformity in Horizontal Movpe Reactors.” JOURNAL OF CRYSTAL GROWTH 107.1-4 (1991): 175–180. Print.
APA
Moerman, I., Coudenys, G., Demeester, P., TURNER, B., & CRAWLEY, J. (1991). INFLUENCE OF GAS MIXING ON THE LATERAL UNIFORMITY IN HORIZONTAL MOVPE REACTORS. JOURNAL OF CRYSTAL GROWTH, 107(1-4), 175–180. Presented at the 5TH INTERNATIONAL CONF ON METALORGANIC VAPOR PHASE EPITAXY / WORKSHOP ON METALORGANIC BEAM EPITAXY, CHEMICAL BEAM EPITAXY AND GAS SOURCE MOLECULAR BEAM EPITAXY.
Chicago author-date
Moerman, Ingrid, Geert Coudenys, Piet Demeester, B TURNER, and J CRAWLEY. 1991. “Influence of Gas Mixing on the Lateral Uniformity in Horizontal Movpe Reactors.” Journal of Crystal Growth 107 (1-4): 175–180.
Chicago author-date (all authors)
Moerman, Ingrid, Geert Coudenys, Piet Demeester, B TURNER, and J CRAWLEY. 1991. “Influence of Gas Mixing on the Lateral Uniformity in Horizontal Movpe Reactors.” Journal of Crystal Growth 107 (1-4): 175–180.
Vancouver
1.
Moerman I, Coudenys G, Demeester P, TURNER B, CRAWLEY J. INFLUENCE OF GAS MIXING ON THE LATERAL UNIFORMITY IN HORIZONTAL MOVPE REACTORS. JOURNAL OF CRYSTAL GROWTH. Jun 18-22, 1990; 1991;107(1-4):175–80.
IEEE
[1]
I. Moerman, G. Coudenys, P. Demeester, B. TURNER, and J. CRAWLEY, “INFLUENCE OF GAS MIXING ON THE LATERAL UNIFORMITY IN HORIZONTAL MOVPE REACTORS,” JOURNAL OF CRYSTAL GROWTH, vol. 107, no. 1–4, pp. 175–180, 1991.
@article{8516257,
  abstract     = {Two novel gas mixing devices, which can be easily implemented in a horizonatal MOVPE reactor, have been designed in order to achieve better thickness and composition uniformity for both GaAs/AlGaAs and InGaAs/InP layerstructures.  In this paper we have used periodic multilayer structures and single layers to investigate thickness respectively composition uniformity.  Thickness variations smaller than 1.5% (standard deviation) over a whole 2 inch wafer can be achieved.  The standard deviation of a 2 inch wafer covered with InGaAs is as good as 1.4 X 10(-4) for the mismatch and 2.9 nm for the PL peak wavelength.},
  author       = {Moerman, Ingrid and Coudenys, Geert and Demeester, Piet and TURNER, B and CRAWLEY, J},
  issn         = {0022-0248},
  journal      = {JOURNAL OF CRYSTAL GROWTH},
  keywords     = {IBCN},
  language     = {eng},
  location     = {AACHEN, FED REP GER},
  number       = {1-4},
  pages        = {175--180},
  title        = {INFLUENCE OF GAS MIXING ON THE LATERAL UNIFORMITY IN HORIZONTAL MOVPE REACTORS},
  url          = {http://dx.doi.org/10.1016/0022-0248(91)90452-B},
  volume       = {107},
  year         = {1991},
}

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