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Statistical analysis of the impact of anode recess on the electrical characteristics of AlGaN/GaN Schottky diodes with gated edge termination

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Abstract
In this paper, we have extensively investigated the impact of anode recess on the reverse leakage current, forward voltage (V-F), and dynamic characteristics of Au-free AlGaN/GaN Schottky barrier diodes with a gated edge termination (GET-SBDs) on 200-mm silicon substrates. By increasing the number of atomic layer etching (ALE) cycles for anode recessing, we have found that: 1) the reverse leakage current is strongly suppressed due to a better electrostatic control for pinching off the channel in the GET region; a median leakage current of similar to 1 nA/mmand an I-ON/I-OFF ratio higher than 108 have been achieved in GET-SBDs with six ALE cycles; 2) the forward voltage (similar to 1.3 V) is almost independent of the ALE cycles, taking into account its statistical distribution across the wafers; 3) when the remaining AlGaN barrier starts to be very thin (in the case of six ALE cycles), a spread of the ON-resistance, mainly attributed to the GET region, can occur due to the difficult control of the remaining AlGaN thickness and surface quality; and 4) the dynamic forward voltage of GET-SBDs shows a mild dependence on the ALE process in pulsed I-V characterization, and a more ALE-dependent dynamic ON-resistance is observed.
Keywords
200-mm, AlGaN/GaN, atomic layer etching (ALE), diode, GET-SBD, leakage, metal-insulator-semiconductor high-electron mobility transistor (MISHEMT)

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MLA
Hu, Jie et al. “Statistical Analysis of the Impact of Anode Recess on the Electrical Characteristics of AlGaN/GaN Schottky Diodes with Gated Edge Termination.” IEEE TRANSACTIONS ON ELECTRON DEVICES 63.9 (2016): 3451–3458. Print.
APA
Hu, Jie, Stoffels, S., Lenci, S., De Jaeger, B., Ronchi, N., Tallarico, A. N., Wellekens, D., et al. (2016). Statistical analysis of the impact of anode recess on the electrical characteristics of AlGaN/GaN Schottky diodes with gated edge termination. IEEE TRANSACTIONS ON ELECTRON DEVICES, 63(9), 3451–3458.
Chicago author-date
Hu, Jie, Steve Stoffels, Silvia Lenci, Brice De Jaeger, Nicolo Ronchi, Andrea Natale Tallarico, Dirk Wellekens, et al. 2016. “Statistical Analysis of the Impact of Anode Recess on the Electrical Characteristics of AlGaN/GaN Schottky Diodes with Gated Edge Termination.” Ieee Transactions on Electron Devices 63 (9): 3451–3458.
Chicago author-date (all authors)
Hu, Jie, Steve Stoffels, Silvia Lenci, Brice De Jaeger, Nicolo Ronchi, Andrea Natale Tallarico, Dirk Wellekens, Shuzhen You, Benoit Bakeroot, Guido Groeseneken, and Stefaan Decoutere. 2016. “Statistical Analysis of the Impact of Anode Recess on the Electrical Characteristics of AlGaN/GaN Schottky Diodes with Gated Edge Termination.” Ieee Transactions on Electron Devices 63 (9): 3451–3458.
Vancouver
1.
Hu J, Stoffels S, Lenci S, De Jaeger B, Ronchi N, Tallarico AN, et al. Statistical analysis of the impact of anode recess on the electrical characteristics of AlGaN/GaN Schottky diodes with gated edge termination. IEEE TRANSACTIONS ON ELECTRON DEVICES. 2016;63(9):3451–8.
IEEE
[1]
J. Hu et al., “Statistical analysis of the impact of anode recess on the electrical characteristics of AlGaN/GaN Schottky diodes with gated edge termination,” IEEE TRANSACTIONS ON ELECTRON DEVICES, vol. 63, no. 9, pp. 3451–3458, 2016.
@article{8510233,
  abstract     = {In this paper, we have extensively investigated the impact of anode recess on the reverse leakage current, forward voltage (V-F), and dynamic characteristics of Au-free AlGaN/GaN Schottky barrier diodes with a gated edge termination (GET-SBDs) on 200-mm silicon substrates. By increasing the number of atomic layer etching (ALE) cycles for anode recessing, we have found that: 1) the reverse leakage current is strongly suppressed due to a better electrostatic control for pinching off the channel in the GET region; a median leakage current of similar to 1 nA/mmand an I-ON/I-OFF ratio higher than 108 have been achieved in GET-SBDs with six ALE cycles; 2) the forward voltage (similar to 1.3 V) is almost independent of the ALE cycles, taking into account its statistical distribution across the wafers; 3) when the remaining AlGaN barrier starts to be very thin (in the case of six ALE cycles), a spread of the ON-resistance, mainly attributed to the GET region, can occur due to the difficult control of the remaining AlGaN thickness and surface quality; and 4) the dynamic forward voltage of GET-SBDs shows a mild dependence on the ALE process in pulsed I-V characterization, and a more ALE-dependent dynamic ON-resistance is observed.},
  author       = {Hu, Jie and Stoffels, Steve and Lenci, Silvia and De Jaeger, Brice and Ronchi, Nicolo and Tallarico, Andrea Natale and Wellekens, Dirk and You, Shuzhen and Bakeroot, Benoit and Groeseneken, Guido and Decoutere, Stefaan},
  issn         = {0018-9383},
  journal      = {IEEE TRANSACTIONS ON ELECTRON DEVICES},
  keywords     = {200-mm,AlGaN/GaN,atomic layer etching (ALE),diode,GET-SBD,leakage,metal-insulator-semiconductor high-electron mobility transistor (MISHEMT)},
  language     = {eng},
  number       = {9},
  pages        = {3451--3458},
  title        = {Statistical analysis of the impact of anode recess on the electrical characteristics of AlGaN/GaN Schottky diodes with gated edge termination},
  url          = {http://dx.doi.org/10.1109/TED.2016.2587103},
  volume       = {63},
  year         = {2016},
}

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