Advanced search
1 file | 2.77 MB

Perpendicular magnetic anisotropy of Co\Pt bilayers on ALD HfO2

Author
Organization
Abstract
Perpendicular Magnetic Anisotropy (PMA) is a key requirement for state of the art Magnetic Random Access Memories (MRAM). Currently, PMA has been widely reported in standard Magnetic Tunnel Junction material stacks using MgO as a dielectric. In this contribution, we present the first report of PMA at the interface with a high-kappa dielectric grown by Atomic Layer Deposition, HfO2. The PMA appears after annealing a HfO2\Co\Pt\Ru stack in N-2 with the K-eff of 0.25 mJ/m(2) as determined by Vibrating Sample Magnetometry. X-Ray Diffraction and Transmission Electron Microscopy show that the appearance of PMA coincides with interdiffusion and the epitaxial ordering of the Co\Pt bilayer. High-kappa dielectrics are especially interesting for Voltage Control of Magnetic Anisotropy applications and are of potential interest for low-power MRAM and spintronics technologies. Published by AIP Publishing.
Keywords
COBALT FILMS, THIN-FILMS, MULTILAYERS

Downloads

  • (...).pdf
    • full text
    • |
    • UGent only
    • |
    • PDF
    • |
    • 2.77 MB

Citation

Please use this url to cite or link to this publication:

Chicago
Vermeulen, Bart F, Jackson Wu, Johan Swerts, Sebastien Couet, Dimitri Linten, Iuliana P Radu, Kristiaan Temst, et al. 2016. “Perpendicular Magnetic Anisotropy of Co\Pt Bilayers on ALD HfO2.” Journal of Applied Physics 120 (16).
APA
Vermeulen, B. F., Wu, J., Swerts, J., Couet, S., Linten, D., Radu, I. P., Temst, K., et al. (2016). Perpendicular magnetic anisotropy of Co\Pt bilayers on ALD HfO2. JOURNAL OF APPLIED PHYSICS, 120(16).
Vancouver
1.
Vermeulen BF, Wu J, Swerts J, Couet S, Linten D, Radu IP, et al. Perpendicular magnetic anisotropy of Co\Pt bilayers on ALD HfO2. JOURNAL OF APPLIED PHYSICS. 2016;120(16).
MLA
Vermeulen, Bart F, Jackson Wu, Johan Swerts, et al. “Perpendicular Magnetic Anisotropy of Co\Pt Bilayers on ALD HfO2.” JOURNAL OF APPLIED PHYSICS 120.16 (2016): n. pag. Print.
@article{8510075,
  abstract     = {Perpendicular Magnetic Anisotropy (PMA) is a key requirement for state of the art Magnetic Random Access Memories (MRAM). Currently, PMA has been widely reported in standard Magnetic Tunnel Junction material stacks using MgO as a dielectric. In this contribution, we present the first report of PMA at the interface with a high-kappa dielectric grown by Atomic Layer Deposition, HfO2. The PMA appears after annealing a HfO2{\textbackslash}Co{\textbackslash}Pt{\textbackslash}Ru stack in N-2 with the K-eff of 0.25 mJ/m(2) as determined by Vibrating Sample Magnetometry. X-Ray Diffraction and Transmission Electron Microscopy show that the appearance of PMA coincides with interdiffusion and the epitaxial ordering of the Co{\textbackslash}Pt bilayer. High-kappa dielectrics are especially interesting for Voltage Control of Magnetic Anisotropy applications and are of potential interest for low-power MRAM and spintronics technologies. Published by AIP Publishing.},
  articleno    = {163903},
  author       = {Vermeulen, Bart F and Wu, Jackson and Swerts, Johan and Couet, Sebastien and Linten, Dimitri and Radu, Iuliana P and Temst, Kristiaan and Rampelberg, Geert and Detavernier, Christophe and Groeseneken, Guido and Martens, Koen},
  issn         = {0021-8979},
  journal      = {JOURNAL OF APPLIED PHYSICS},
  keyword      = {COBALT FILMS,THIN-FILMS,MULTILAYERS},
  language     = {eng},
  number       = {16},
  pages        = {5},
  title        = {Perpendicular magnetic anisotropy of Co{\textbackslash}Pt bilayers on ALD HfO2},
  url          = {http://dx.doi.org/10.1063/1.4966121},
  volume       = {120},
  year         = {2016},
}

Altmetric
View in Altmetric
Web of Science
Times cited: