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Enhanced Ge photoluminescence by increasing the active P doping using high order Ge precursors at lower growth temperatures

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Chicago
Van Deun, Rik, Yosuke Shimura, Ashwyn Srinivasan, Dries Van Thourhout, M Pantouvaki, Joris Van Campenhout, and Roger Loo. 2015. “Enhanced Ge Photoluminescence by Increasing the Active P Doping Using High Order Ge Precursors at Lower Growth Temperatures.” In E-MRS Fall Meeting, Abstracts.
APA
Van Deun, R., Shimura, Y., Srinivasan, A., Van Thourhout, D., Pantouvaki, M., Van Campenhout, J., & Loo, R. (2015). Enhanced Ge photoluminescence by increasing the active P doping using high order Ge precursors at lower growth temperatures. E-MRS fall meeting, Abstracts. Presented at the 2015 E-MRS fall meeting and exhibit.
Vancouver
1.
Van Deun R, Shimura Y, Srinivasan A, Van Thourhout D, Pantouvaki M, Van Campenhout J, et al. Enhanced Ge photoluminescence by increasing the active P doping using high order Ge precursors at lower growth temperatures. E-MRS fall meeting, Abstracts. 2015.
MLA
Van Deun, Rik, Yosuke Shimura, Ashwyn Srinivasan, et al. “Enhanced Ge Photoluminescence by Increasing the Active P Doping Using High Order Ge Precursors at Lower Growth Temperatures.” E-MRS Fall Meeting, Abstracts. 2015. Print.
@inproceedings{8508814,
  author       = {Van Deun, Rik and Shimura, Yosuke and Srinivasan, Ashwyn and Van Thourhout, Dries and Pantouvaki, M and Van Campenhout, Joris and Loo, Roger},
  booktitle    = {E-MRS fall meeting, Abstracts},
  language     = {eng},
  location     = {Warsaw, Poland},
  title        = {Enhanced Ge photoluminescence by increasing the active P doping using high order Ge precursors at lower growth temperatures},
  year         = {2015},
}