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Center for nano- and biophotonics (NB-Photonics)

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Citation

Please use this url to cite or link to this publication:

Chicago
Srinivasan, Ashwyn, Marianna Pantouvaki, Yosuke Shimura, Clement Porret, Rik Van Deun, Roger Loo, Dries Van Thourhout, and Joris Van Campenhout. 2016. “Laser Annealed In-situ P-doped Ge for On-chip Laser Source Applications.” In Silicon Photonics and Photonic Integrated Circuits V. Vol. 9891. Bellingham, WA, USA: SPIE, the International Society for Optical Engineering.
APA
Srinivasan, Ashwyn, Pantouvaki, M., Shimura, Y., Porret, C., Van Deun, R., Loo, R., Van Thourhout, D., et al. (2016). Laser annealed in-situ P-doped Ge for on-chip laser source applications. Silicon photonics and photonic integrated circuits V (Vol. 9891). Presented at the Conference on Silicon Photonics and Photonic Integrated Circuits V, Bellingham, WA, USA: SPIE, the International Society for Optical Engineering.
Vancouver
1.
Srinivasan A, Pantouvaki M, Shimura Y, Porret C, Van Deun R, Loo R, et al. Laser annealed in-situ P-doped Ge for on-chip laser source applications. Silicon photonics and photonic integrated circuits V. Bellingham, WA, USA: SPIE, the International Society for Optical Engineering; 2016.
MLA
Srinivasan, Ashwyn et al. “Laser Annealed In-situ P-doped Ge for On-chip Laser Source Applications.” Silicon Photonics and Photonic Integrated Circuits V. Vol. 9891. Bellingham, WA, USA: SPIE, the International Society for Optical Engineering, 2016. Print.
@inproceedings{8507403,
  articleno    = {98911U},
  author       = {Srinivasan, Ashwyn and Pantouvaki, Marianna and Shimura, Yosuke and Porret, Clement and Van Deun, Rik and Loo, Roger and Van Thourhout, Dries and Van Campenhout, Joris},
  booktitle    = {Silicon photonics and photonic integrated circuits V},
  isbn         = {9781510601369},
  issn         = {0277-786X},
  language     = {eng},
  location     = {Brussels, Belgium},
  pages        = {1},
  publisher    = {SPIE, the International Society for Optical Engineering},
  title        = {Laser annealed in-situ P-doped Ge for on-chip laser source applications},
  url          = {http://dx.doi.org/10.1117/12.2227620},
  volume       = {9891},
  year         = {2016},
}

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