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Passively mode-locked III-V-on-silicon laser with 1 GHz repetition rate

(2016) p.1-2
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Center for nano- and biophotonics (NB-Photonics)

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Citation

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Chicago
Van Gasse, Kasper, Zhechao Wang, V Moskalenko, S Latkowski, Bart Kuyken, E Bente, and Günther Roelkens. 2016. “Passively Mode-locked III-V-on-silicon Laser with 1 GHz Repetition Rate.” In , 1–2.
APA
Van Gasse, K., Wang, Z., Moskalenko, V., Latkowski, S., Kuyken, B., Bente, E., & Roelkens, G. (2016). Passively mode-locked III-V-on-silicon laser with 1 GHz repetition rate (pp. 1–2). Presented at the The 25th International conference Semiconductor Laser Conference (ISLC 2016).
Vancouver
1.
Van Gasse K, Wang Z, Moskalenko V, Latkowski S, Kuyken B, Bente E, et al. Passively mode-locked III-V-on-silicon laser with 1 GHz repetition rate. 2016. p. 1–2.
MLA
Van Gasse, Kasper, Zhechao Wang, V Moskalenko, et al. “Passively Mode-locked III-V-on-silicon Laser with 1 GHz Repetition Rate.” 2016. 1–2. Print.
@inproceedings{8506558,
  articleno    = {ThB6},
  author       = {Van Gasse, Kasper and Wang, Zhechao and Moskalenko, V and Latkowski, S and Kuyken, Bart and Bente, E and Roelkens, G{\"u}nther},
  location     = {Kobe, Japan},
  pages        = {ThB6:1--ThB6:2},
  title        = {Passively mode-locked III-V-on-silicon laser with 1 GHz repetition rate},
  year         = {2016},
}