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Center for nano- and biophotonics (NB-Photonics)
Abstract
We will introduce our Ge1-xSnx epitaxial growth process and we will illustrate its material quality by the performance of photodetectors containing a Ge/Ge1-xSnx/Ge quantum well with fully strained Ge1-xSnx layers. The photodetector responsivity in the short-wave infrared increases with Sn concentration, due to the shrinkage of the band gap. The use of multi quantum wells leads to a higher detector responsivity as the total absorption layer thickness is increased without undesired strain relaxation. The use of Ge1-xSnx as direct band gap material is expected to boost the efficiency of Ge based photodetectors even further but it requires relaxed Ge1-xSnx layers. An improvement of the surface quality of the epitaxial Ge1-xSnx in terms of Sn agglomeration has been achieved by freezing Sn atoms (which is realized by using a high precursor partial pressure and the surfactant effect of hydrogen) into the subsurface of the Ge1-xSnx layers.
Keywords
GE, ALLOYS, HYDROGEN, SI

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Citation

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Chicago
Shimura, Y, W Wang, W Vandervorst, F Gencarelli, A Gassenq, Günther Roelkens, A Vantomme, M Caymax, and R Loo. 2014. “Ge1-xSnx Optical Devices : Growth and Applications.” In SIGE, GE, AND RELATED COMPOUNDS 6: MATERIALS, PROCESSING, AND DEVICES, 64:677–687. Oct 05-10, 2014.
APA
Shimura, Y, Wang, W., Vandervorst, W., Gencarelli, F., Gassenq, A., Roelkens, G., Vantomme, A., et al. (2014). Ge1-xSnx optical devices : growth and applications. SIGE, GE, AND RELATED COMPOUNDS 6: MATERIALS, PROCESSING, AND DEVICES (Vol. 64, pp. 677–687). Presented at the 6th SiGe, Ge, and Related Compounds - Materials, Processing and Devices Symposium held at the 2014 Joint International 226th Electrochemical-Society, Oct 05-10, 2014.
Vancouver
1.
Shimura Y, Wang W, Vandervorst W, Gencarelli F, Gassenq A, Roelkens G, et al. Ge1-xSnx optical devices : growth and applications. SIGE, GE, AND RELATED COMPOUNDS 6: MATERIALS, PROCESSING, AND DEVICES. Oct 05-10, 2014; 2014. p. 677–87.
MLA
Shimura, Y, W Wang, W Vandervorst, et al. “Ge1-xSnx Optical Devices : Growth and Applications.” SIGE, GE, AND RELATED COMPOUNDS 6: MATERIALS, PROCESSING, AND DEVICES. Vol. 64. Oct 05-10, 2014, 2014. 677–687. Print.
@inproceedings{8506366,
  abstract     = {We will introduce our Ge1-xSnx epitaxial growth process and we will illustrate its material quality by the performance of photodetectors containing a Ge/Ge1-xSnx/Ge quantum well with fully strained Ge1-xSnx layers. The photodetector responsivity in the short-wave infrared increases with Sn concentration, due to the shrinkage of the band gap. The use of multi quantum wells leads to a higher detector responsivity as the total absorption layer thickness is increased without undesired strain relaxation. The use of Ge1-xSnx as direct band gap material is expected to boost the efficiency of Ge based photodetectors even further but it requires relaxed Ge1-xSnx layers. An improvement of the surface quality of the epitaxial Ge1-xSnx in terms of Sn agglomeration has been achieved by freezing Sn atoms (which is realized by using a high precursor partial pressure and the surfactant effect of hydrogen) into the subsurface of the Ge1-xSnx layers.},
  author       = {Shimura, Y and Wang, W and Vandervorst, W and Gencarelli, F and Gassenq, A and Roelkens, G{\"u}nther and Vantomme, A and Caymax, M and Loo, R},
  booktitle    = {SIGE, GE, AND RELATED COMPOUNDS 6: MATERIALS, PROCESSING, AND DEVICES},
  isbn         = {978-1-60768-543-2},
  issn         = {1938-5862},
  keyword      = {GE,ALLOYS,HYDROGEN,SI},
  language     = {eng},
  location     = {Cancun, MEXICO},
  number       = {6},
  pages        = {677--687},
  title        = {Ge1-xSnx optical devices : growth and applications},
  url          = {http://dx.doi.org/10.1149/06406.0677ecst},
  volume       = {64},
  year         = {2014},
}

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