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III/V nano ridge structures for optical applications on patterned 300 mm silicon substrate

(2016) APPLIED PHYSICS LETTERS. 109(9). p.1-5
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Center for nano- and biophotonics (NB-Photonics)
Abstract
We report on an integration approach of III/V nano ridges on patterned silicon (Si) wafers by metal organic vapor phase epitaxy (MOVPE). Trenches of different widths (<= 500 nm) were processed in a silicon oxide (SiO2) layer on top of a 300 mm (001) Si substrate. The MOVPE growth conditions were chosen in a way to guarantee an efficient defect trapping within narrow trenches and to form a box shaped ridge with increased III/V volume when growing out of the trench. Compressively strained InGaAs/GaAs multi-quantum wells with 19% indium were deposited on top of the fully relaxed GaAs ridges as an active material for optical applications. Transmission electron microcopy investigation shows that very flat quantum well (QW) interfaces were realized. A clear defect trapping inside the trenches is observed whereas the ridge material is free of threading dislocations with only a very low density of planar defects. Pronounced QW photoluminescence (PL) is detected from different ridge sizes at room temperature. The potential of these III/V nano ridges for laser integration on Si substrates is emphasized by the achieved ridge volume which could enable wave guidance and by the high crystal quality in line with the distinct PL. Published by AIP Publishing.
Keywords
ROOM-TEMPERATURE, LASERS, SI, GAAS, INTEGRATION, OPERATION

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Citation

Please use this url to cite or link to this publication:

MLA
Kunert, B et al. “III/V Nano Ridge Structures for Optical Applications on Patterned 300 Mm Silicon Substrate.” APPLIED PHYSICS LETTERS 109.9 (2016): 1–5. Print.
APA
Kunert, B., Guo, W., Mols, Y., Tian, B., Wang, Z., Shi, Y., Van Thourhout, D., et al. (2016). III/V nano ridge structures for optical applications on patterned 300 mm silicon substrate. APPLIED PHYSICS LETTERS, 109(9), 1–5.
Chicago author-date
Kunert, B, W Guo, Y Mols, Bin Tian, Zhechao Wang, Yuting Shi, Dries Van Thourhout, et al. 2016. “III/V Nano Ridge Structures for Optical Applications on Patterned 300 Mm Silicon Substrate.” Applied Physics Letters 109 (9): 1–5.
Chicago author-date (all authors)
Kunert, B, W Guo, Y Mols, Bin Tian, Zhechao Wang, Yuting Shi, Dries Van Thourhout, M Pantouvaki, J Van Campenhout, R Langer, and K Barla. 2016. “III/V Nano Ridge Structures for Optical Applications on Patterned 300 Mm Silicon Substrate.” Applied Physics Letters 109 (9): 1–5.
Vancouver
1.
Kunert B, Guo W, Mols Y, Tian B, Wang Z, Shi Y, et al. III/V nano ridge structures for optical applications on patterned 300 mm silicon substrate. APPLIED PHYSICS LETTERS. AIP Publishing; 2016;109(9):1–5.
IEEE
[1]
B. Kunert et al., “III/V nano ridge structures for optical applications on patterned 300 mm silicon substrate,” APPLIED PHYSICS LETTERS, vol. 109, no. 9, pp. 1–5, 2016.
@article{8504311,
  abstract     = {We report on an integration approach of III/V nano ridges on patterned silicon (Si) wafers by metal organic vapor phase epitaxy (MOVPE). Trenches of different widths (<= 500 nm) were processed in a silicon oxide (SiO2) layer on top of a 300 mm (001) Si substrate. The MOVPE growth conditions were chosen in a way to guarantee an efficient defect trapping within narrow trenches and to form a box shaped ridge with increased III/V volume when growing out of the trench. Compressively strained InGaAs/GaAs multi-quantum wells with 19% indium were deposited on top of the fully relaxed GaAs ridges as an active material for optical applications. Transmission electron microcopy investigation shows that very flat quantum well (QW) interfaces were realized. A clear defect trapping inside the trenches is observed whereas the ridge material is free of threading dislocations with only a very low density of planar defects. Pronounced QW photoluminescence (PL) is detected from different ridge sizes at room temperature. The potential of these III/V nano ridges for laser integration on Si substrates is emphasized by the achieved ridge volume which could enable wave guidance and by the high crystal quality in line with the distinct PL. Published by AIP Publishing.},
  articleno    = {091101 },
  author       = {Kunert, B and Guo, W and Mols, Y and Tian, Bin and Wang, Zhechao and Shi, Yuting and Van Thourhout, Dries and Pantouvaki, M and Van Campenhout, J and Langer, R and Barla, K},
  issn         = {0003-6951},
  journal      = {APPLIED PHYSICS LETTERS},
  keywords     = {ROOM-TEMPERATURE,LASERS,SI,GAAS,INTEGRATION,OPERATION},
  language     = {eng},
  number       = {9},
  pages        = {091101 :1--091101 :5},
  publisher    = {AIP Publishing},
  title        = {III/V nano ridge structures for optical applications on patterned 300 mm silicon substrate},
  url          = {http://dx.doi.org/10.1063/1.4961936},
  volume       = {109},
  year         = {2016},
}

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