Synchrotron based in situ characterization during atomic layer deposition
- Author
- Jolien Dendooven (UGent) , Kilian Devloo-Casier (UGent) , Alessandro Coati, Giuseppe Portale, Wim Bras, Karl Ludwig and Christophe Detavernier (UGent)
- Organization
- Abstract
- Synchrotron based x-ray fluorescence (XRF) and grazing incidence small angle scattering (GISAXS) are demonstrated to be excellent in situ methods for monitoring atomic layer deposition (ALD) processes. XRF allows to identify and to quantify the amount of material deposited, whereas GISAXS is a powerful technique for monitoring nanoscale morphology. Three case studies are discussed where these in situ techniques are used to investigate specific aspects of ALD processes that are of relevance for applications in micro-electronics: the initial growth of gate oxides, the initial nucleation during metal ALD processes, and the penetration of ALD deposited materials into nanoporous low-k oxides.
- Keywords
- TIO2, GROWTH, PLATINUM, THIN-FILMS
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Please use this url to cite or link to this publication: http://hdl.handle.net/1854/LU-8200959
- MLA
- Dendooven, Jolien, et al. “Synchrotron Based in Situ Characterization during Atomic Layer Deposition.” 2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT), edited by TA Tang and J Zhou, IEEE, 2014, doi:10.1109/ICSICT.2014.7021535.
- APA
- Dendooven, J., Devloo-Casier, K., Coati, A., Portale, G., Bras, W., Ludwig, K., & Detavernier, C. (2014). Synchrotron based in situ characterization during atomic layer deposition. In T. Tang & J. Zhou (Eds.), 2014 12th IEEE International conference on solid-state and integrated circuit technology (ICSICT). https://doi.org/10.1109/ICSICT.2014.7021535
- Chicago author-date
- Dendooven, Jolien, Kilian Devloo-Casier, Alessandro Coati, Giuseppe Portale, Wim Bras, Karl Ludwig, and Christophe Detavernier. 2014. “Synchrotron Based in Situ Characterization during Atomic Layer Deposition.” In 2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT), edited by TA Tang and J Zhou. New York, NY, USA: IEEE. https://doi.org/10.1109/ICSICT.2014.7021535.
- Chicago author-date (all authors)
- Dendooven, Jolien, Kilian Devloo-Casier, Alessandro Coati, Giuseppe Portale, Wim Bras, Karl Ludwig, and Christophe Detavernier. 2014. “Synchrotron Based in Situ Characterization during Atomic Layer Deposition.” In 2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT), ed by. TA Tang and J Zhou. New York, NY, USA: IEEE. doi:10.1109/ICSICT.2014.7021535.
- Vancouver
- 1.Dendooven J, Devloo-Casier K, Coati A, Portale G, Bras W, Ludwig K, et al. Synchrotron based in situ characterization during atomic layer deposition. In: Tang T, Zhou J, editors. 2014 12th IEEE International conference on solid-state and integrated circuit technology (ICSICT). New York, NY, USA: IEEE; 2014.
- IEEE
- [1]J. Dendooven et al., “Synchrotron based in situ characterization during atomic layer deposition,” in 2014 12th IEEE International conference on solid-state and integrated circuit technology (ICSICT), Guilin, PR China, 2014.
@inproceedings{8200959, abstract = {{Synchrotron based x-ray fluorescence (XRF) and grazing incidence small angle scattering (GISAXS) are demonstrated to be excellent in situ methods for monitoring atomic layer deposition (ALD) processes. XRF allows to identify and to quantify the amount of material deposited, whereas GISAXS is a powerful technique for monitoring nanoscale morphology. Three case studies are discussed where these in situ techniques are used to investigate specific aspects of ALD processes that are of relevance for applications in micro-electronics: the initial growth of gate oxides, the initial nucleation during metal ALD processes, and the penetration of ALD deposited materials into nanoporous low-k oxides.}}, author = {{Dendooven, Jolien and Devloo-Casier, Kilian and Coati, Alessandro and Portale, Giuseppe and Bras, Wim and Ludwig, Karl and Detavernier, Christophe}}, booktitle = {{2014 12th IEEE International conference on solid-state and integrated circuit technology (ICSICT)}}, editor = {{Tang, TA and Zhou, J}}, isbn = {{9781479932825}}, keywords = {{TIO2,GROWTH,PLATINUM,THIN-FILMS}}, language = {{eng}}, location = {{Guilin, PR China}}, pages = {{4}}, publisher = {{IEEE}}, title = {{Synchrotron based in situ characterization during atomic layer deposition}}, url = {{http://doi.org/10.1109/ICSICT.2014.7021535}}, year = {{2014}}, }
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