Electronic characterization of a single dangling bond on n-and p-type Si(001)-(2×1): H
(2016) SURFACE SCIENCE. 645. p.L88-L92
Please use this url to cite or link to this publication:
http://hdl.handle.net/1854/LU-8150777
- author
- H Kawai, O Neucheva, TL Tiong, C Joachim and Mark Saeys UGent
- organization
- year
- 2016
- type
- journalArticle (original)
- publication status
- published
- subject
- keyword
- INITIO MOLECULAR-DYNAMICS, SCANNING TUNNELING MICROSCOPE, TOTAL-ENERGY CALCULATIONS, WAVE BASIS-SET, SURFACE, SEMICONDUCTOR, FABRICATION, SIMULATION, DESORPTION, GERMANIUM, Single dangling bond, Si(001):H, STM, Single-atom device, Quantum transport
- journal title
- SURFACE SCIENCE
- volume
- 645
- pages
- L88 - L92
- Web of Science type
- Article
- Web of Science id
- 000368864700013
- JCR category
- PHYSICS, CONDENSED MATTER
- JCR impact factor
- 2.062 (2016)
- JCR rank
- 32/67 (2016)
- JCR quartile
- 2 (2016)
- ISSN
- 0039-6028
- DOI
- 10.1016/j.susc.2015.11.001
- language
- English
- UGent publication?
- yes
- classification
- A1
- copyright statement
- I have transferred the copyright for this publication to the publisher
- id
- 8150777
- handle
- http://hdl.handle.net/1854/LU-8150777
- date created
- 2016-11-14 11:51:56
- date last changed
- 2017-03-09 12:55:00
@article{8150777,
author = {Kawai, H and Neucheva, O and Tiong, TL and Joachim, C and Saeys, Mark},
issn = {0039-6028},
journal = {SURFACE SCIENCE},
keyword = {INITIO MOLECULAR-DYNAMICS,SCANNING TUNNELING MICROSCOPE,TOTAL-ENERGY CALCULATIONS,WAVE BASIS-SET,SURFACE,SEMICONDUCTOR,FABRICATION,SIMULATION,DESORPTION,GERMANIUM,Single dangling bond,Si(001):H,STM,Single-atom device,Quantum transport},
language = {eng},
pages = {L88--L92},
title = {Electronic characterization of a single dangling bond on n-and p-type Si(001)-(2{\texttimes}1): H},
url = {http://dx.doi.org/10.1016/j.susc.2015.11.001},
volume = {645},
year = {2016},
}
- Chicago
- Kawai, H, O Neucheva, TL Tiong, C Joachim, and Mark Saeys. 2016. “Electronic Characterization of a Single Dangling Bond on N-and P-type Si(001)-(2×1): H.” Surface Science 645: L88–L92.
- APA
- Kawai, H., Neucheva, O., Tiong, T., Joachim, C., & Saeys, M. (2016). Electronic characterization of a single dangling bond on n-and p-type Si(001)-(2×1): H. SURFACE SCIENCE, 645, L88–L92.
- Vancouver
- 1.Kawai H, Neucheva O, Tiong T, Joachim C, Saeys M. Electronic characterization of a single dangling bond on n-and p-type Si(001)-(2×1): H. SURFACE SCIENCE. 2016;645:L88–L92.
- MLA
- Kawai, H, O Neucheva, TL Tiong, et al. “Electronic Characterization of a Single Dangling Bond on N-and P-type Si(001)-(2×1): H.” SURFACE SCIENCE 645 (2016): L88–L92. Print.