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Electronic characterization of a single dangling bond on n-and p-type Si(001)-(2×1): H

(2016) SURFACE SCIENCE. 645. p.L88-L92
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INITIO MOLECULAR-DYNAMICS, SCANNING TUNNELING MICROSCOPE, TOTAL-ENERGY CALCULATIONS, WAVE BASIS-SET, SURFACE, SEMICONDUCTOR, FABRICATION, SIMULATION, DESORPTION, GERMANIUM, Single dangling bond, Si(001):H, STM, Single-atom device, Quantum transport

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Citation

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Chicago
Kawai, H, O Neucheva, TL Tiong, C Joachim, and Mark Saeys. 2016. “Electronic Characterization of a Single Dangling Bond on N-and P-type Si(001)-(2×1): H.” Surface Science 645: L88–L92.
APA
Kawai, H., Neucheva, O., Tiong, T., Joachim, C., & Saeys, M. (2016). Electronic characterization of a single dangling bond on n-and p-type Si(001)-(2×1): H. SURFACE SCIENCE, 645, L88–L92.
Vancouver
1.
Kawai H, Neucheva O, Tiong T, Joachim C, Saeys M. Electronic characterization of a single dangling bond on n-and p-type Si(001)-(2×1): H. SURFACE SCIENCE. 2016;645:L88–L92.
MLA
Kawai, H, O Neucheva, TL Tiong, et al. “Electronic Characterization of a Single Dangling Bond on N-and P-type Si(001)-(2×1): H.” SURFACE SCIENCE 645 (2016): L88–L92. Print.
@article{8150777,
  author       = {Kawai, H and Neucheva, O and Tiong, TL and Joachim, C and Saeys, Mark},
  issn         = {0039-6028},
  journal      = {SURFACE SCIENCE},
  keyword      = {INITIO MOLECULAR-DYNAMICS,SCANNING TUNNELING MICROSCOPE,TOTAL-ENERGY CALCULATIONS,WAVE BASIS-SET,SURFACE,SEMICONDUCTOR,FABRICATION,SIMULATION,DESORPTION,GERMANIUM,Single dangling bond,Si(001):H,STM,Single-atom device,Quantum transport},
  language     = {eng},
  pages        = {L88--L92},
  title        = {Electronic characterization of a single dangling bond on n-and p-type Si(001)-(2{\texttimes}1): H},
  url          = {http://dx.doi.org/10.1016/j.susc.2015.11.001},
  volume       = {645},
  year         = {2016},
}

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