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Substitutional carbon loss in Si:C stressor layers probed by deep-level transient spectroscopy

(2016) ECS Transactions. 75(4). p.3-11
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MLA
Simoen, Eddy, et al. “Substitutional Carbon Loss in Si:C Stressor Layers Probed by Deep-Level Transient Spectroscopy.” ECS Transactions, edited by Eddy Simoen et al., vol. 75, no. 4, Electrochemical Society (ECS), 2016, pp. 3–11, doi:10.1149/07504.0003ecst.
APA
Simoen, E., Dhayalan, S. K., Hikavyy, A. Y., Loo, R., Rosseel, E., Vrielinck, H., & Lauwaert, J. (2016). Substitutional carbon loss in Si:C stressor layers probed by deep-level transient spectroscopy. In E. Simoen, R. Falster, O. Kononchuk, O. Nakatsuka, & C. Claeys (Eds.), ECS Transactions (Vol. 75, pp. 3–11). https://doi.org/10.1149/07504.0003ecst
Chicago author-date
Simoen, Eddy, Sathish Kumar Dhayalan, Andriy Yakovitch Hikavyy, Roger Loo, Erik Rosseel, Henk Vrielinck, and Johan Lauwaert. 2016. “Substitutional Carbon Loss in Si:C Stressor Layers Probed by Deep-Level Transient Spectroscopy.” In ECS Transactions, edited by Eddy Simoen, RJ Falster, O Kononchuk, O Nakatsuka, and C Claeys, 75:3–11. Pennington, NJ, USA: Electrochemical Society (ECS). https://doi.org/10.1149/07504.0003ecst.
Chicago author-date (all authors)
Simoen, Eddy, Sathish Kumar Dhayalan, Andriy Yakovitch Hikavyy, Roger Loo, Erik Rosseel, Henk Vrielinck, and Johan Lauwaert. 2016. “Substitutional Carbon Loss in Si:C Stressor Layers Probed by Deep-Level Transient Spectroscopy.” In ECS Transactions, ed by. Eddy Simoen, RJ Falster, O Kononchuk, O Nakatsuka, and C Claeys, 75:3–11. Pennington, NJ, USA: Electrochemical Society (ECS). doi:10.1149/07504.0003ecst.
Vancouver
1.
Simoen E, Dhayalan SK, Hikavyy AY, Loo R, Rosseel E, Vrielinck H, et al. Substitutional carbon loss in Si:C stressor layers probed by deep-level transient spectroscopy. In: Simoen E, Falster R, Kononchuk O, Nakatsuka O, Claeys C, editors. ECS Transactions. Pennington, NJ, USA: Electrochemical Society (ECS); 2016. p. 3–11.
IEEE
[1]
E. Simoen et al., “Substitutional carbon loss in Si:C stressor layers probed by deep-level transient spectroscopy,” in ECS Transactions, Honolulu, HI, USA, 2016, vol. 75, no. 4, pp. 3–11.
@inproceedings{8098015,
  author       = {{Simoen, Eddy and Dhayalan, Sathish Kumar and Hikavyy, Andriy Yakovitch and Loo, Roger and Rosseel, Erik and Vrielinck, Henk and Lauwaert, Johan}},
  booktitle    = {{ECS Transactions}},
  editor       = {{Simoen, Eddy and Falster, RJ and Kononchuk, O and Nakatsuka, O and Claeys, C}},
  issn         = {{1938-5862}},
  language     = {{eng}},
  location     = {{Honolulu, HI, USA}},
  number       = {{4}},
  pages        = {{3--11}},
  publisher    = {{Electrochemical Society (ECS)}},
  title        = {{Substitutional carbon loss in Si:C stressor layers probed by deep-level transient spectroscopy}},
  url          = {{http://doi.org/10.1149/07504.0003ecst}},
  volume       = {{75}},
  year         = {{2016}},
}

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