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Anisotropic thermal expansion of Ni, Pd and Pt germanides and silicides

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Abstract
Silicon or germanium-based transistors are nowadays used in direct contact with silicide or germanide crystalline alloys for semiconductor device applications. Since these compounds are formed at elevated temperatures, accurate knowledge of the thermal expansion of both substrate and the contact is important to address temperature depending effects such as thermal stress. Here we report the linear coefficients of thermal expansion of Ni-, Pd- and Pt-based mono-germanides, mono-silicides and di-metal-silicides as determined by powder-based x-ray diffraction between 300 and 1225 K. The investigated mono-metallic compounds, all sharing the MnP crystal structure, as well as Pd2Si and Pt2Si exhibit anisotropic expansion. By consequence, this anisotropic behaviour should be taken into account for evaluating the crystal unit's cell at elevated temperatures.
Keywords
germanides, thermal expansion, silicides, anisotropy, x-ray diffraction, MNP-TYPE PHASES, TRANSITIONS, TECHNOLOGIES, COEFFICIENT, SILICON, STRESS, FILMS

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Chicago
Geenen, Filip, Werner Knaepen, Filip Moens, L Brondeel, A Leenaers, S Van den Berghe, and Christophe Detavernier. 2016. “Anisotropic Thermal Expansion of Ni, Pd and Pt Germanides and Silicides.” Journal of Physics D-applied Physics 49 (27).
APA
Geenen, F., Knaepen, W., Moens, F., Brondeel, L., Leenaers, A., Van den Berghe, S., & Detavernier, C. (2016). Anisotropic thermal expansion of Ni, Pd and Pt germanides and silicides. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 49(27).
Vancouver
1.
Geenen F, Knaepen W, Moens F, Brondeel L, Leenaers A, Van den Berghe S, et al. Anisotropic thermal expansion of Ni, Pd and Pt germanides and silicides. JOURNAL OF PHYSICS D-APPLIED PHYSICS. 2016;49(27).
MLA
Geenen, Filip, Werner Knaepen, Filip Moens, et al. “Anisotropic Thermal Expansion of Ni, Pd and Pt Germanides and Silicides.” JOURNAL OF PHYSICS D-APPLIED PHYSICS 49.27 (2016): n. pag. Print.
@article{8082985,
  abstract     = {Silicon or germanium-based transistors are nowadays used in direct contact with silicide or germanide crystalline alloys for semiconductor device applications. Since these compounds are formed at elevated temperatures, accurate knowledge of the thermal expansion of both substrate and the contact is important to address temperature depending effects such as thermal stress. Here we report the linear coefficients of thermal expansion of Ni-, Pd- and Pt-based mono-germanides, mono-silicides and di-metal-silicides as determined by powder-based x-ray diffraction between 300 and 1225 K. The investigated mono-metallic compounds, all sharing the MnP crystal structure, as well as Pd2Si and Pt2Si exhibit anisotropic expansion. By consequence, this anisotropic behaviour should be taken into account for evaluating the crystal unit's cell at elevated temperatures.},
  articleno    = {275307},
  author       = {Geenen, Filip and Knaepen, Werner and Moens, Filip and Brondeel, L and Leenaers, A and Van den Berghe, S and Detavernier, Christophe},
  issn         = {0022-3727},
  journal      = {JOURNAL OF PHYSICS D-APPLIED PHYSICS},
  keyword      = {germanides,thermal expansion,silicides,anisotropy,x-ray diffraction,MNP-TYPE PHASES,TRANSITIONS,TECHNOLOGIES,COEFFICIENT,SILICON,STRESS,FILMS},
  language     = {eng},
  number       = {27},
  pages        = {6},
  title        = {Anisotropic thermal expansion of Ni, Pd and Pt germanides and silicides},
  url          = {http://dx.doi.org/10.1088/0022-3727/49/27/275307},
  volume       = {49},
  year         = {2016},
}

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