Advanced search
2 files | 4.59 MB

Dark current analysis in high-speed germanium p-i-n waveguide photodetectors

Author
Organization
Project
Center for nano- and biophotonics (NB-Photonics)
Abstract
We present a dark current analysis in waveguide-coupled germanium vertical p-i-n photodetectors. In the analysis, a surface leakage current and a bulk leakage current were separated, and their activation energies were extracted. The surface leakage current originating from the minority carrier generation on the Ge layer sidewalls, governed by the Shockley-Read-Hall process and enhanced by the trap-assisted-tunneling process, was identified as the main contribution to the dark current of vertical p-i-n photodiodes at room temperature. The behavior of this surface leakage current as a function of temperature and reverse bias voltage is well reproduced by using the Hurckx model for trap-assisted-tunneling. Published by AIP Publishing.
Keywords
SI, PLATFORM, TEMPERATURE, DEPENDENCE, LEAKAGE, MODEL, HIGH-PERFORMANCE, GE PFET JUNCTIONS

Downloads

  • (...).pdf
    • full text
    • |
    • UGent only
    • |
    • PDF
    • |
    • 3.28 MB
  • pub 1861a.pdf
    • full text
    • |
    • open access
    • |
    • PDF
    • |
    • 1.32 MB

Citation

Please use this url to cite or link to this publication:

Chicago
Chen, Hongtao, P Verheyen, P De Heyn, G Lepage, J De Coster, S Balakrishnan, P Absil, Günther Roelkens, and J Van Campenhout. 2016. “Dark Current Analysis in High-speed Germanium P-i-n Waveguide Photodetectors.” Journal of Applied Physics 119 (21).
APA
Chen, Hongtao, Verheyen, P., De Heyn, P., Lepage, G., De Coster, J., Balakrishnan, S., Absil, P., et al. (2016). Dark current analysis in high-speed germanium p-i-n waveguide photodetectors. JOURNAL OF APPLIED PHYSICS, 119(21).
Vancouver
1.
Chen H, Verheyen P, De Heyn P, Lepage G, De Coster J, Balakrishnan S, et al. Dark current analysis in high-speed germanium p-i-n waveguide photodetectors. JOURNAL OF APPLIED PHYSICS. MELVILLE: AMER INST PHYSICS; 2016;119(21).
MLA
Chen, Hongtao, P Verheyen, P De Heyn, et al. “Dark Current Analysis in High-speed Germanium P-i-n Waveguide Photodetectors.” JOURNAL OF APPLIED PHYSICS 119.21 (2016): n. pag. Print.
@article{8080605,
  abstract     = {We present a dark current analysis in waveguide-coupled germanium vertical p-i-n photodetectors. In the analysis, a surface leakage current and a bulk leakage current were separated, and their activation energies were extracted. The surface leakage current originating from the minority carrier generation on the Ge layer sidewalls, governed by the Shockley-Read-Hall process and enhanced by the trap-assisted-tunneling process, was identified as the main contribution to the dark current of vertical p-i-n photodiodes at room temperature. The behavior of this surface leakage current as a function of temperature and reverse bias voltage is well reproduced by using the Hurckx model for trap-assisted-tunneling. Published by AIP Publishing.},
  articleno    = {213105},
  author       = {Chen, Hongtao and Verheyen, P and De Heyn, P and Lepage, G and De Coster, J and Balakrishnan, S and Absil, P and Roelkens, G{\"u}nther and Van Campenhout, J},
  issn         = {0021-8979},
  journal      = {JOURNAL OF APPLIED PHYSICS},
  language     = {eng},
  number       = {21},
  pages        = {9},
  publisher    = {AMER INST PHYSICS},
  title        = {Dark current analysis in high-speed germanium p-i-n waveguide photodetectors},
  url          = {http://dx.doi.org/10.1063/1.4953147},
  volume       = {119},
  year         = {2016},
}

Altmetric
View in Altmetric
Web of Science
Times cited: