Advanced search
2 files | 4.71 MB Add to list

56 Gb/s Germanium waveguide electro-absorption modulator

Author
Organization
Project
Center for nano- and biophotonics (NB-Photonics)
Abstract
We report a Germanium waveguide electro-absorption modulator with electro-optic bandwidth substantially beyond 50 GHz. The device is implemented in a fully integrated Si photonics platform on 200 mm silicon-on-insulator wafers with 220 nm top Si thickness. Wide open eye diagrams are demonstrated at 1610 nm operation wavelength for nonreturn-to-zero on-off keying (NRZ-OOK) modulation at data rates as high as 56 Gb/s. Dynamic extinction ratios up to 3.3 dB are obtained by applying drive voltages of 2V peak-to-peak, along with an optical insertion loss below 5.5 dB. The device has a low junction capacitance of just 12.8 fF, resulting in 12.8 fJ/bit of dynamic and similar to 1.2 mW of static power consumption in typical operating conditions. Wafer-scale performance data are presented and confirm the manufacturability of the device. The demonstrated modulator shows great potential for realizing high-density and low-power silicon photonic transceivers targeting short-reach optical interconnects at serial data rates of 56 Gb/s and beyond.
Keywords
optoelectronics, Electro-absorption modulators, SILICON, INTERCONNECTS, optical interconnects, waveguide modulators

Downloads

  • (...).pdf
    • full text
    • |
    • UGent only
    • |
    • PDF
    • |
    • 4.14 MB
  • pub 1817a.pdf
    • full text
    • |
    • open access
    • |
    • PDF
    • |
    • 565.59 KB

Citation

Please use this url to cite or link to this publication:

MLA
Srinivasan, Srinivasan Ashwyn, Marianna Pantouvaki, Shashank Gupta, et al. “56 Gb/s Germanium Waveguide Electro-absorption Modulator.” JOURNAL OF LIGHTWAVE TECHNOLOGY 34.2 (2016): 419–424. Print.
APA
Srinivasan, S. A., Pantouvaki, M., Gupta, S., Chen, H., Verheyen, P., Lepage, G., Roelkens, G., et al. (2016). 56 Gb/s Germanium waveguide electro-absorption modulator. JOURNAL OF LIGHTWAVE TECHNOLOGY, 34(2), 419–424. Presented at the Optical Fiber Communications Conference and Exhibition (OFC).
Chicago author-date
Srinivasan, Srinivasan Ashwyn, Marianna Pantouvaki, Shashank Gupta, Hongtao Chen, Peter Verheyen, Guy Lepage, Günther Roelkens, et al. 2016. “56 Gb/s Germanium Waveguide Electro-absorption Modulator.” Journal of Lightwave Technology 34 (2): 419–424.
Chicago author-date (all authors)
Srinivasan, Srinivasan Ashwyn, Marianna Pantouvaki, Shashank Gupta, Hongtao Chen, Peter Verheyen, Guy Lepage, Günther Roelkens, Krishna Saraswat, Dries Van Thourhout, Philippe Absil, and Joris Van Campenhout. 2016. “56 Gb/s Germanium Waveguide Electro-absorption Modulator.” Journal of Lightwave Technology 34 (2): 419–424.
Vancouver
1.
Srinivasan SA, Pantouvaki M, Gupta S, Chen H, Verheyen P, Lepage G, et al. 56 Gb/s Germanium waveguide electro-absorption modulator. JOURNAL OF LIGHTWAVE TECHNOLOGY. 2016;34(2):419–24.
IEEE
[1]
S. A. Srinivasan et al., “56 Gb/s Germanium waveguide electro-absorption modulator,” JOURNAL OF LIGHTWAVE TECHNOLOGY, vol. 34, no. 2, pp. 419–424, 2016.
@article{8080498,
  abstract     = {We report a Germanium waveguide electro-absorption modulator with electro-optic bandwidth substantially beyond 50 GHz. The device is implemented in a fully integrated Si photonics platform on 200 mm silicon-on-insulator wafers with 220 nm top Si thickness. Wide open eye diagrams are demonstrated at 1610 nm operation wavelength for nonreturn-to-zero on-off keying (NRZ-OOK) modulation at data rates as high as 56 Gb/s. Dynamic extinction ratios up to 3.3 dB are obtained by applying drive voltages of 2V peak-to-peak, along with an optical insertion loss below 5.5 dB. The device has a low junction capacitance of just 12.8 fF, resulting in 12.8 fJ/bit of dynamic and similar to 1.2 mW of static power consumption in typical operating conditions. Wafer-scale performance data are presented and confirm the manufacturability of the device. The demonstrated modulator shows great potential for realizing high-density and low-power silicon photonic transceivers targeting short-reach optical interconnects at serial data rates of 56 Gb/s and beyond.},
  author       = {Srinivasan, Srinivasan Ashwyn and Pantouvaki, Marianna and Gupta, Shashank and Chen, Hongtao and Verheyen, Peter and Lepage, Guy and Roelkens, Günther and Saraswat, Krishna and Van Thourhout, Dries and Absil, Philippe and Van Campenhout, Joris},
  issn         = {0733-8724},
  journal      = {JOURNAL OF LIGHTWAVE TECHNOLOGY},
  keywords     = {optoelectronics,Electro-absorption modulators,SILICON,INTERCONNECTS,optical interconnects,waveguide modulators},
  language     = {eng},
  location     = {Los Angeles, CA, USA},
  number       = {2},
  pages        = {419--424},
  title        = {56 Gb/s Germanium waveguide electro-absorption modulator},
  url          = {http://dx.doi.org/10.1109/JLT.2015.2478601},
  volume       = {34},
  year         = {2016},
}

Altmetric
View in Altmetric
Web of Science
Times cited: