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Dynamic properties of silicon-integrated short-wavelength hybrid-cavity VCSEL

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Abstract
We present a vertical-cavity surface-emitting laser (VCSEL) where a GaAs-based "half-VCSEL" is attached to a dielectric distributed Bragg reflector on silicon using ultra-thin divinylsiloxane-bis-benzocyclobutene (DVS-BCB) adhesive bonding, creating a hybrid cavity where the optical field extends over both the GaAs- and the Si-based parts of the cavity. A VCSEL with an oxide aperture diameter of 5 mu m and a threshold current of 0.4 mA provides 0.6 mW output power at 845 nm. The VCSEL exhibits a modulation bandwidth of 11 GHz and can transmit data up to 20 Gbps.
Keywords
GRATINGS, SOI, SUBSTRATE, ENERGY, GBIT/S, IMPACT, large signal modulation, optical interconnects, semiconductor lasers, silicon photonics, vertical-cavity surface-emitting laser (VCSEL), High-speed modulation

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Citation

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MLA
Haglund, EP et al. “Dynamic Properties of Silicon-integrated Short-wavelength Hybrid-cavity VCSEL.” Proceedings of SPIE. Vol. 9766. BELLINGHAM: SPIE-INT SOC OPTICAL ENGINEERING, 2016. Print.
APA
Haglund, EP, Kumari, S., Westbergh, P., Gustavsson, J., Roelkens, G., Baets, R., & Larsson, A. (2016). Dynamic properties of silicon-integrated short-wavelength hybrid-cavity VCSEL. Proceedings of SPIE (Vol. 9766). Presented at the Conference on Vertical-Cavity Surface-Emitting Lasers XX, BELLINGHAM: SPIE-INT SOC OPTICAL ENGINEERING.
Chicago author-date
Haglund, EP, Sulakshna Kumari, P Westbergh, JS Gustavsson, Günther Roelkens, Roel Baets, and A Larsson. 2016. “Dynamic Properties of Silicon-integrated Short-wavelength Hybrid-cavity VCSEL.” In Proceedings of SPIE. Vol. 9766. BELLINGHAM: SPIE-INT SOC OPTICAL ENGINEERING.
Chicago author-date (all authors)
Haglund, EP, Sulakshna Kumari, P Westbergh, JS Gustavsson, Günther Roelkens, Roel Baets, and A Larsson. 2016. “Dynamic Properties of Silicon-integrated Short-wavelength Hybrid-cavity VCSEL.” In Proceedings of SPIE. Vol. 9766. BELLINGHAM: SPIE-INT SOC OPTICAL ENGINEERING.
Vancouver
1.
Haglund E, Kumari S, Westbergh P, Gustavsson J, Roelkens G, Baets R, et al. Dynamic properties of silicon-integrated short-wavelength hybrid-cavity VCSEL. Proceedings of SPIE. BELLINGHAM: SPIE-INT SOC OPTICAL ENGINEERING; 2016.
IEEE
[1]
E. Haglund et al., “Dynamic properties of silicon-integrated short-wavelength hybrid-cavity VCSEL,” in Proceedings of SPIE, San Francisco, CA, 2016, vol. 9766.
@inproceedings{8080284,
  abstract     = {We present a vertical-cavity surface-emitting laser (VCSEL) where a GaAs-based "half-VCSEL" is attached to a dielectric distributed Bragg reflector on silicon using ultra-thin divinylsiloxane-bis-benzocyclobutene (DVS-BCB) adhesive bonding, creating a hybrid cavity where the optical field extends over both the GaAs- and the Si-based parts of the cavity. A VCSEL with an oxide aperture diameter of 5 mu m and a threshold current of 0.4 mA provides 0.6 mW output power at 845 nm. The VCSEL exhibits a modulation bandwidth of 11 GHz and can transmit data up to 20 Gbps.},
  articleno    = {976607},
  author       = {Haglund, EP and Kumari, Sulakshna and Westbergh, P and Gustavsson, JS and Roelkens, Günther and Baets, Roel and Larsson, A},
  booktitle    = {Proceedings of SPIE},
  isbn         = {978-1-5106-0001-0},
  issn         = {0277-786X},
  keywords     = {GRATINGS,SOI,SUBSTRATE,ENERGY,GBIT/S,IMPACT,large signal modulation,optical interconnects,semiconductor lasers,silicon photonics,vertical-cavity surface-emitting laser (VCSEL),High-speed modulation},
  language     = {eng},
  location     = {San Francisco, CA},
  pages        = {7},
  publisher    = {SPIE-INT SOC OPTICAL ENGINEERING},
  title        = {Dynamic properties of silicon-integrated short-wavelength hybrid-cavity VCSEL},
  url          = {http://dx.doi.org/10.1117/12.2207301},
  volume       = {9766},
  year         = {2016},
}

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