Leakage and trapping characteristics in Au-free AlGaN/GaN Schottky barrier diodes fabricated on C-doped buffer layers
- Author
- J Hu, S Stoffels, S Lenci, SZ You, Benoit Bakeroot (UGent) , N Ronchi, R Venegas, G Groeseneken and S Decoutere
- Organization
- Keywords
- charge trapping, buffer layers, current transient spectroscopy, HEMTS, doping, GaN, Schottky diodes
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Please use this url to cite or link to this publication: http://hdl.handle.net/1854/LU-8054635
- MLA
- Hu, J., et al. “Leakage and Trapping Characteristics in Au-Free AlGaN/GaN Schottky Barrier Diodes Fabricated on C-Doped Buffer Layers.” PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, vol. 213, no. 5, WILEY-V C H VERLAG GMBH, 2016, pp. 1229–35, doi:10.1002/pssa.201532797.
- APA
- Hu, J., Stoffels, S., Lenci, S., You, S., Bakeroot, B., Ronchi, N., … Decoutere, S. (2016). Leakage and trapping characteristics in Au-free AlGaN/GaN Schottky barrier diodes fabricated on C-doped buffer layers. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 213(5), 1229–1235. https://doi.org/10.1002/pssa.201532797
- Chicago author-date
- Hu, J, S Stoffels, S Lenci, SZ You, Benoit Bakeroot, N Ronchi, R Venegas, G Groeseneken, and S Decoutere. 2016. “Leakage and Trapping Characteristics in Au-Free AlGaN/GaN Schottky Barrier Diodes Fabricated on C-Doped Buffer Layers.” PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE 213 (5): 1229–35. https://doi.org/10.1002/pssa.201532797.
- Chicago author-date (all authors)
- Hu, J, S Stoffels, S Lenci, SZ You, Benoit Bakeroot, N Ronchi, R Venegas, G Groeseneken, and S Decoutere. 2016. “Leakage and Trapping Characteristics in Au-Free AlGaN/GaN Schottky Barrier Diodes Fabricated on C-Doped Buffer Layers.” PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE 213 (5): 1229–1235. doi:10.1002/pssa.201532797.
- Vancouver
- 1.Hu J, Stoffels S, Lenci S, You S, Bakeroot B, Ronchi N, et al. Leakage and trapping characteristics in Au-free AlGaN/GaN Schottky barrier diodes fabricated on C-doped buffer layers. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE. 2016;213(5):1229–35.
- IEEE
- [1]J. Hu et al., “Leakage and trapping characteristics in Au-free AlGaN/GaN Schottky barrier diodes fabricated on C-doped buffer layers,” PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, vol. 213, no. 5, pp. 1229–1235, 2016.
@article{8054635,
author = {{Hu, J and Stoffels, S and Lenci, S and You, SZ and Bakeroot, Benoit and Ronchi, N and Venegas, R and Groeseneken, G and Decoutere, S}},
issn = {{1862-6300}},
journal = {{PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE}},
keywords = {{charge trapping,buffer layers,current transient spectroscopy,HEMTS,doping,GaN,Schottky diodes}},
language = {{eng}},
number = {{5}},
pages = {{1229--1235}},
publisher = {{WILEY-V C H VERLAG GMBH}},
title = {{Leakage and trapping characteristics in Au-free AlGaN/GaN Schottky barrier diodes fabricated on C-doped buffer layers}},
url = {{http://doi.org/10.1002/pssa.201532797}},
volume = {{213}},
year = {{2016}},
}
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