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Semiconductor-metal transition in ALD deposited vanadium oxide thin films and nanoparticles

Geert Rampelberg UGent, Bob De Schutter UGent, Wouter Devulder UGent, Marc Schaekers, Koen Martens, Christian Dussarrat and Christophe Detavernier UGent (2016) Atomic Layer Deposition, 16th International conference, Abstracts.
abstract
We report on ALD of vanadium oxides from tetrakis(ethylmethylamino)vanadium as metal-organic precursor, with a comparison between H2O, O3 and O2 plasma as reactants. Depending on the reactant, the as deposited film consisted of amorphous VO2 or crystalline V2O5, as confirmed by X-ray photoelectron spectroscopy (XPS) (Figure 1(a)) and X-ray diffraction (XRD). In-situ XRD was used to monitor the crystalline phase formation during post-deposition annealing. By carefully controlling the oxygen partial pressure, relatively smooth films of single phase VO2(R), VO2(B), V6O13 and V2O5 could be obtained. Depending on the reactant used during deposition, VO2(R) and VO2(B) were stabilized in a mixture of 5000 Pa H2 and 20 Pa O2 mixture during annealing (Figure 1(b)). The tetragonal VO2(R) films showed a reversible semiconductor-metal transition to monoclinic VO2(M1) during cooling below 68°C, often referred to as a metal-insulator transition. Accompanied with this structural transition, changes in sheet resistance of more than three orders of magnitude were observed in films with a thickness from 10 to 30 nm, which is an improvement by an order of magnitude compared to sputtered films (Figure 1(c)). In addition, VO2 nanoparticles were synthesized by agglomeration of thinner films upon crystallization. These nanoparticles showed an optical semiconductor-metal transition with a hysteresis as large as 50°C (Figure 1(d)).
Please use this url to cite or link to this publication:
author
organization
year
type
conference (meetingAbstract)
publication status
published
subject
keyword
thin film, semiconductor-metal transition, atomic layer deposition, vanadium dioxide
in
Atomic Layer Deposition, 16th International conference, Abstracts
conference name
16th International conference on Atomic Layer Deposition (ALD 2016)
conference location
Dublin, Ireland
conference start
2016-07-24
conference end
2016-07-27
language
English
UGent publication?
yes
classification
C3
id
8043044
handle
http://hdl.handle.net/1854/LU-8043044
date created
2016-08-02 13:10:37
date last changed
2017-12-04 12:44:10
@inproceedings{8043044,
  abstract     = {We report on ALD of vanadium oxides from tetrakis(ethylmethylamino)vanadium as metal-organic precursor, with a comparison between H2O, O3 and O2 plasma as reactants. Depending on the reactant, the as deposited film consisted of amorphous VO2 or crystalline V2O5, as confirmed by X-ray photoelectron spectroscopy (XPS) (Figure 1(a)) and X-ray diffraction (XRD). In-situ XRD was used to monitor the crystalline phase formation during post-deposition annealing. By carefully controlling the oxygen partial pressure, relatively smooth films of single phase VO2(R), VO2(B), V6O13 and V2O5 could be obtained. Depending on the reactant used during deposition, VO2(R) and VO2(B) were stabilized in a mixture of 5000 Pa  H2 and 20 Pa O2 mixture during annealing (Figure 1(b)). The tetragonal VO2(R) films showed a reversible semiconductor-metal transition to monoclinic VO2(M1) during cooling below 68{\textdegree}C, often referred to as a metal-insulator transition. Accompanied with this structural transition, changes in sheet resistance of more than three orders of magnitude were observed in films with a thickness from 10 to 30 nm, which is an improvement by an order of magnitude compared to sputtered films (Figure 1(c)). In addition, VO2 nanoparticles were synthesized by agglomeration of thinner films upon crystallization. These nanoparticles showed an optical semiconductor-metal transition with a hysteresis as large as 50{\textdegree}C (Figure 1(d)).},
  author       = {Rampelberg, Geert and De Schutter, Bob and Devulder, Wouter and Schaekers, Marc and Martens, Koen and Dussarrat, Christian and Detavernier, Christophe},
  booktitle    = {Atomic Layer Deposition, 16th International conference, Abstracts},
  keyword      = {thin film,semiconductor-metal transition,atomic layer deposition,vanadium dioxide},
  language     = {eng},
  location     = {Dublin, Ireland},
  title        = {Semiconductor-metal transition in ALD deposited vanadium oxide thin films and nanoparticles},
  year         = {2016},
}

Chicago
Rampelberg, Geert, Bob De Schutter, Wouter Devulder, Marc Schaekers, Koen Martens, Christian Dussarrat, and Christophe Detavernier. 2016. “Semiconductor-metal Transition in ALD Deposited Vanadium Oxide Thin Films and Nanoparticles.” In Atomic Layer Deposition, 16th International Conference, Abstracts.
APA
Rampelberg, G., De Schutter, B., Devulder, W., Schaekers, M., Martens, K., Dussarrat, C., & Detavernier, C. (2016). Semiconductor-metal transition in ALD deposited vanadium oxide thin films and nanoparticles. Atomic Layer Deposition, 16th International conference, Abstracts. Presented at the 16th International conference on Atomic Layer Deposition (ALD 2016).
Vancouver
1.
Rampelberg G, De Schutter B, Devulder W, Schaekers M, Martens K, Dussarrat C, et al. Semiconductor-metal transition in ALD deposited vanadium oxide thin films and nanoparticles. Atomic Layer Deposition, 16th International conference, Abstracts. 2016.
MLA
Rampelberg, Geert, Bob De Schutter, Wouter Devulder, et al. “Semiconductor-metal Transition in ALD Deposited Vanadium Oxide Thin Films and Nanoparticles.” Atomic Layer Deposition, 16th International Conference, Abstracts. 2016. Print.