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Defect engineering for shallow n-type junctions in germanium : facts and fiction

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Keywords
defect engineering, co-doping, n-type doping, point defects, ion implantation, germanium, ION-IMPLANTATION, PHOSPHORUS DIFFUSION, DOPANT ACTIVATION, GE, SB, COIMPLANTATION, SILICON, LAYERS

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Citation

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MLA
Simoen, Eddy, Marc Schaekers, Jinbiao Liu, et al. “Defect Engineering for Shallow N-type Junctions in Germanium : Facts and Fiction.” PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE 213.22 (2016): 2799–2808. Print.
APA
Simoen, Eddy, Schaekers, M., Liu, J., Luo, J., Zhao, C., Barla, K., & Collaert, N. (2016). Defect engineering for shallow n-type junctions in germanium : facts and fiction. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 213(22), 2799–2808.
Chicago author-date
Simoen, Eddy, Marc Schaekers, Jinbiao Liu, Jun Luo, Chao Zhao, Kathy Barla, and Nadine Collaert. 2016. “Defect Engineering for Shallow N-type Junctions in Germanium : Facts and Fiction.” Physica Status Solidi A-applications and Materials Science 213 (22): 2799–2808.
Chicago author-date (all authors)
Simoen, Eddy, Marc Schaekers, Jinbiao Liu, Jun Luo, Chao Zhao, Kathy Barla, and Nadine Collaert. 2016. “Defect Engineering for Shallow N-type Junctions in Germanium : Facts and Fiction.” Physica Status Solidi A-applications and Materials Science 213 (22): 2799–2808.
Vancouver
1.
Simoen E, Schaekers M, Liu J, Luo J, Zhao C, Barla K, et al. Defect engineering for shallow n-type junctions in germanium : facts and fiction. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE. 2016;213(22):2799–808.
IEEE
[1]
E. Simoen et al., “Defect engineering for shallow n-type junctions in germanium : facts and fiction,” PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, vol. 213, no. 22, pp. 2799–2808, 2016.
@article{8036408,
  author       = {Simoen, Eddy and Schaekers, Marc and Liu, Jinbiao and Luo, Jun and Zhao, Chao and Barla, Kathy and Collaert, Nadine},
  issn         = {1862-6300},
  journal      = {PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE},
  keywords     = {defect engineering,co-doping,n-type doping,point defects,ion implantation,germanium,ION-IMPLANTATION,PHOSPHORUS DIFFUSION,DOPANT ACTIVATION,GE,SB,COIMPLANTATION,SILICON,LAYERS},
  language     = {eng},
  number       = {22},
  pages        = {2799--2808},
  title        = {Defect engineering for shallow n-type junctions in germanium : facts and fiction},
  url          = {http://dx.doi.org/10.1002/pssa.201600491},
  volume       = {213},
  year         = {2016},
}

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