Defect engineering for shallow n-type junctions in germanium : facts and fiction
- Author
- Eddy Simoen (UGent) , Marc Schaekers, Jinbiao Liu, Jun Luo, Chao Zhao, Kathy Barla and Nadine Collaert
- Organization
- Keywords
- defect engineering, co-doping, n-type doping, point defects, ion implantation, germanium, ION-IMPLANTATION, PHOSPHORUS DIFFUSION, DOPANT ACTIVATION, GE, SB, COIMPLANTATION, SILICON, LAYERS
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Citation
Please use this url to cite or link to this publication: http://hdl.handle.net/1854/LU-8036408
- MLA
- Simoen, Eddy, Marc Schaekers, Jinbiao Liu, et al. “Defect Engineering for Shallow N-type Junctions in Germanium : Facts and Fiction.” PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE 213.22 (2016): 2799–2808. Print.
- APA
- Simoen, Eddy, Schaekers, M., Liu, J., Luo, J., Zhao, C., Barla, K., & Collaert, N. (2016). Defect engineering for shallow n-type junctions in germanium : facts and fiction. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 213(22), 2799–2808.
- Chicago author-date
- Simoen, Eddy, Marc Schaekers, Jinbiao Liu, Jun Luo, Chao Zhao, Kathy Barla, and Nadine Collaert. 2016. “Defect Engineering for Shallow N-type Junctions in Germanium : Facts and Fiction.” Physica Status Solidi A-applications and Materials Science 213 (22): 2799–2808.
- Chicago author-date (all authors)
- Simoen, Eddy, Marc Schaekers, Jinbiao Liu, Jun Luo, Chao Zhao, Kathy Barla, and Nadine Collaert. 2016. “Defect Engineering for Shallow N-type Junctions in Germanium : Facts and Fiction.” Physica Status Solidi A-applications and Materials Science 213 (22): 2799–2808.
- Vancouver
- 1.Simoen E, Schaekers M, Liu J, Luo J, Zhao C, Barla K, et al. Defect engineering for shallow n-type junctions in germanium : facts and fiction. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE. 2016;213(22):2799–808.
- IEEE
- [1]E. Simoen et al., “Defect engineering for shallow n-type junctions in germanium : facts and fiction,” PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, vol. 213, no. 22, pp. 2799–2808, 2016.
@article{8036408,
author = {Simoen, Eddy and Schaekers, Marc and Liu, Jinbiao and Luo, Jun and Zhao, Chao and Barla, Kathy and Collaert, Nadine},
issn = {1862-6300},
journal = {PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE},
keywords = {defect engineering,co-doping,n-type doping,point defects,ion implantation,germanium,ION-IMPLANTATION,PHOSPHORUS DIFFUSION,DOPANT ACTIVATION,GE,SB,COIMPLANTATION,SILICON,LAYERS},
language = {eng},
number = {22},
pages = {2799--2808},
title = {Defect engineering for shallow n-type junctions in germanium : facts and fiction},
url = {http://dx.doi.org/10.1002/pssa.201600491},
volume = {213},
year = {2016},
}
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