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Toward understanding positive bias temperature instability in fully recessed-gate GaN MISFETs

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Abstract
In this paper, fully recessed-gate GaN MISFETs with two different gate dielectrics, i.e., plasma-enhanced atomic layer deposition (PEALD) SiN and ALD Al2O3 gate dielectric, are used to study the origin of positive bias temperature instability (PBTI). By employing a set of dedicated stress-recovery tests, we study PBTI during the stress and relaxation. Hence, a defect band model with different distributions of defect levels inside the gate dielectric is proposed, which can excellently reproduce the experimental data and provide insightful information about the origin of PBTI in GaN MISFETs. The results indicate that the serious PBTI in the device with PEALD SiN is mainly due to a wide distribution of defect levels (sigma similar to 0.67 eV), centered below the conduction band of GaN (E-C - 0.05 eV), and can be easily accessed by the channel carriers already at a low-gate voltage. On the other hand, ALD Al2O3 gate dielectric shows a narrower distribution of defects (sigma similar to 0.42 eV), which are far from the conduction band of GaN (E-C + 1.15 eV). This observations explain the improved PBTI reliability observed in devices with ALD Al2O3.
Keywords
VTH hysteresis, NBTI, recessed gate, MECHANISMS, DEVICES, MIS-HEMTS, INTERFACE, GaN-on-Si, VOLTAGE, positive bias temperature instability (PBTI), QUALITY, MISFETs

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MLA
Wu, TL et al. “Toward Understanding Positive Bias Temperature Instability in Fully Recessed-gate GaN MISFETs.” IEEE TRANSACTIONS ON ELECTRON DEVICES 63.5 (2016): 1853–1860. Print.
APA
Wu, T., Franco, J., Marcon, D., De Jaeger, B., Bakeroot, B., Stoffels, S., Van Hove, M., et al. (2016). Toward understanding positive bias temperature instability in fully recessed-gate GaN MISFETs. IEEE TRANSACTIONS ON ELECTRON DEVICES, 63(5), 1853–1860.
Chicago author-date
Wu, TL, J Franco, D Marcon, B De Jaeger, Benoit Bakeroot, S Stoffels, M Van Hove, G Groeseneken, and S Decoutere. 2016. “Toward Understanding Positive Bias Temperature Instability in Fully Recessed-gate GaN MISFETs.” Ieee Transactions on Electron Devices 63 (5): 1853–1860.
Chicago author-date (all authors)
Wu, TL, J Franco, D Marcon, B De Jaeger, Benoit Bakeroot, S Stoffels, M Van Hove, G Groeseneken, and S Decoutere. 2016. “Toward Understanding Positive Bias Temperature Instability in Fully Recessed-gate GaN MISFETs.” Ieee Transactions on Electron Devices 63 (5): 1853–1860.
Vancouver
1.
Wu T, Franco J, Marcon D, De Jaeger B, Bakeroot B, Stoffels S, et al. Toward understanding positive bias temperature instability in fully recessed-gate GaN MISFETs. IEEE TRANSACTIONS ON ELECTRON DEVICES. PISCATAWAY: IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC; 2016;63(5):1853–60.
IEEE
[1]
T. Wu et al., “Toward understanding positive bias temperature instability in fully recessed-gate GaN MISFETs,” IEEE TRANSACTIONS ON ELECTRON DEVICES, vol. 63, no. 5, pp. 1853–1860, 2016.
@article{8032167,
  abstract     = {In this paper, fully recessed-gate GaN MISFETs with two different gate dielectrics, i.e., plasma-enhanced atomic layer deposition (PEALD) SiN and ALD Al2O3 gate dielectric, are used to study the origin of positive bias temperature instability (PBTI). By employing a set of dedicated stress-recovery tests, we study PBTI during the stress and relaxation. Hence, a defect band model with different distributions of defect levels inside the gate dielectric is proposed, which can excellently reproduce the experimental data and provide insightful information about the origin of PBTI in GaN MISFETs. The results indicate that the serious PBTI in the device with PEALD SiN is mainly due to a wide distribution of defect levels (sigma similar to 0.67 eV), centered below the conduction band of GaN (E-C - 0.05 eV), and can be easily accessed by the channel carriers already at a low-gate voltage. On the other hand, ALD Al2O3 gate dielectric shows a narrower distribution of defects (sigma similar to 0.42 eV), which are far from the conduction band of GaN (E-C + 1.15 eV). This observations explain the improved PBTI reliability observed in devices with ALD Al2O3.},
  author       = {Wu, TL and Franco, J and Marcon, D and De Jaeger, B and Bakeroot, Benoit and Stoffels, S and Van Hove, M and Groeseneken, G and Decoutere, S},
  issn         = {0018-9383},
  journal      = {IEEE TRANSACTIONS ON ELECTRON DEVICES},
  keywords     = {VTH hysteresis,NBTI,recessed gate,MECHANISMS,DEVICES,MIS-HEMTS,INTERFACE,GaN-on-Si,VOLTAGE,positive bias temperature instability (PBTI),QUALITY,MISFETs},
  language     = {eng},
  number       = {5},
  pages        = {1853--1860},
  publisher    = {IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC},
  title        = {Toward understanding positive bias temperature instability in fully recessed-gate GaN MISFETs},
  url          = {http://dx.doi.org/10.1109/TED.2016.2539341},
  volume       = {63},
  year         = {2016},
}

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