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Performance optimization of au-free lateral AlGaN/GaN Schottky barrier diode with gated edge termination on 200-mm silicon substrate

J Hu, S Stoffels, S Lenci, Benoit Bakeroot (UGent) , B De Jaeger, M Van Hove, N Ronchi, R Venegas, H Liang, M Zhao, et al.
(2016) IEEE TRANSACTIONS ON ELECTRON DEVICES. 63(3). p.997-1004
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Abstract
In this paper, a further leakage reduction of AlGaN/GaN Schottky barrier diodes with gated edge termination (GET-SBDs) has been achieved by optimizing the physical vapor deposited TiN as the anode metal without severe degradation of ON-state characteristics. The optimized GET-SBD multifinger power diodes with 10 mm anode width deliver similar to 4 A at 2 V and show a median leakage of 1.3 mu A at 25 degrees C and 3.8 mu A at 150 degrees C measured at a reverse voltage of -200 V. The temperature-dependent leakage of Si, SiC, and our GaN power diodes has been compared. The breakdown voltage (BV) of GET-SBDs was evaluated by the variation of anode-to-cathode spacing (LAC) and the length of field plate. We observed a saturated BV of similar to 600 V for the GET-SBDs with LAC larger than 5 mu m. The GET-SBD breakdown mechanism is shown to be determined by the parasitic vertical leakage current through the 2.8 mu m-thick buffer layers measured with a grounding substrate. Furthermore, we show that the forward voltage of GET-SBDs can be improved by shrinking the lateral dimension of the edge termination due to reduced series resistance. The leakage current shows no dependence on the layout dimension LG (from 2 to 0.75 mu m) and remains at a value of similar to 10 nA/mm. The optimized Au-free GET-SBD with low leakage current and improved forward voltage competes with high-performance lateral AlGaN/GaN SBDs reported in the literature.
Keywords
POWER DIODE, TiN, Schottky barrier diode (SBD), leakage reduction, VOLTAGE, ORIENTATION, TRANSISTORS, ORIGIN, 200-mm substrate, AlGaN/GaN, WORK FUNCTION, Au-free, HYBRID ANODE, edge termination

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MLA
Hu, J et al. “Performance Optimization of Au-free Lateral AlGaN/GaN Schottky Barrier Diode with Gated Edge Termination on 200-mm Silicon Substrate.” IEEE TRANSACTIONS ON ELECTRON DEVICES 63.3 (2016): 997–1004. Print.
APA
Hu, J, Stoffels, S., Lenci, S., Bakeroot, B., De Jaeger, B., Van Hove, M., Ronchi, N., et al. (2016). Performance optimization of au-free lateral AlGaN/GaN Schottky barrier diode with gated edge termination on 200-mm silicon substrate. IEEE TRANSACTIONS ON ELECTRON DEVICES, 63(3), 997–1004.
Chicago author-date
Hu, J, S Stoffels, S Lenci, Benoit Bakeroot, B De Jaeger, M Van Hove, N Ronchi, et al. 2016. “Performance Optimization of Au-free Lateral AlGaN/GaN Schottky Barrier Diode with Gated Edge Termination on 200-mm Silicon Substrate.” Ieee Transactions on Electron Devices 63 (3): 997–1004.
Chicago author-date (all authors)
Hu, J, S Stoffels, S Lenci, Benoit Bakeroot, B De Jaeger, M Van Hove, N Ronchi, R Venegas, H Liang, M Zhao, G Groeseneken, and S Decoutere. 2016. “Performance Optimization of Au-free Lateral AlGaN/GaN Schottky Barrier Diode with Gated Edge Termination on 200-mm Silicon Substrate.” Ieee Transactions on Electron Devices 63 (3): 997–1004.
Vancouver
1.
Hu J, Stoffels S, Lenci S, Bakeroot B, De Jaeger B, Van Hove M, et al. Performance optimization of au-free lateral AlGaN/GaN Schottky barrier diode with gated edge termination on 200-mm silicon substrate. IEEE TRANSACTIONS ON ELECTRON DEVICES. PISCATAWAY: IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC; 2016;63(3):997–1004.
IEEE
[1]
J. Hu et al., “Performance optimization of au-free lateral AlGaN/GaN Schottky barrier diode with gated edge termination on 200-mm silicon substrate,” IEEE TRANSACTIONS ON ELECTRON DEVICES, vol. 63, no. 3, pp. 997–1004, 2016.
@article{8032153,
  abstract     = {In this paper, a further leakage reduction of AlGaN/GaN Schottky barrier diodes with gated edge termination (GET-SBDs) has been achieved by optimizing the physical vapor deposited TiN as the anode metal without severe degradation of ON-state characteristics. The optimized GET-SBD multifinger power diodes with 10 mm anode width deliver similar to 4 A at 2 V and show a median leakage of 1.3 mu A at 25 degrees C and 3.8 mu A at 150 degrees C measured at a reverse voltage of -200 V. The temperature-dependent leakage of Si, SiC, and our GaN power diodes has been compared. The breakdown voltage (BV) of GET-SBDs was evaluated by the variation of anode-to-cathode spacing (LAC) and the length of field plate. We observed a saturated BV of similar to 600 V for the GET-SBDs with LAC larger than 5 mu m. The GET-SBD breakdown mechanism is shown to be determined by the parasitic vertical leakage current through the 2.8 mu m-thick buffer layers measured with a grounding substrate. Furthermore, we show that the forward voltage of GET-SBDs can be improved by shrinking the lateral dimension of the edge termination due to reduced series resistance. The leakage current shows no dependence on the layout dimension LG (from 2 to 0.75 mu m) and remains at a value of similar to 10 nA/mm. The optimized Au-free GET-SBD with low leakage current and improved forward voltage competes with high-performance lateral AlGaN/GaN SBDs reported in the literature.},
  author       = {Hu, J and Stoffels, S and Lenci, S and Bakeroot, Benoit and De Jaeger, B and Van Hove, M and Ronchi, N and Venegas, R and Liang, H and Zhao, M and Groeseneken, G and Decoutere, S},
  issn         = {0018-9383},
  journal      = {IEEE TRANSACTIONS ON ELECTRON DEVICES},
  keywords     = {POWER DIODE,TiN,Schottky barrier diode (SBD),leakage reduction,VOLTAGE,ORIENTATION,TRANSISTORS,ORIGIN,200-mm substrate,AlGaN/GaN,WORK FUNCTION,Au-free,HYBRID ANODE,edge termination},
  language     = {eng},
  number       = {3},
  pages        = {997--1004},
  publisher    = {IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC},
  title        = {Performance optimization of au-free lateral AlGaN/GaN Schottky barrier diode with gated edge termination on 200-mm silicon substrate},
  url          = {http://dx.doi.org/10.1109/TED.2016.2515566},
  volume       = {63},
  year         = {2016},
}
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