Advanced search
1 file | 581.24 KB Add to list

Time Dependent Dielectric Breakdown (TDDB) evaluation of PE-ALD SiN gate dielectrics on AlGaN/GaN recessed gate D-mode MIS-HEMTs and E-mode MIS-FETs

Author
Organization
Abstract
This paper reports a comprehensive time dependent dielectric breakdown (TDDB) evaluation of recessed-gate devices with five different AlGaN barrier thicknesses with characteristics ranging from a D-mode MIS-HEMT to an E-mode MIS-FET. First, the fitted parameter beta (the slope of the Weibull distribution) was smaller for a deeper recessed gate and larger for a thicker gate dielectric. Secondly, the extrapolated V-G (criterium of 0.01% failures after 20 years) for the devices with Wg (gate width) = 10 mu m was lower when less AlGaN barrier remains under the gate. However, the extrapolated VG was increased when the AlGaN barrier was completely removed. Thirdly, a deeper recessed gate could result in a dominant percolation path due to a thinner gate dielectric on the sidewall of the gate recess edge. Fourthly, the Weibull distribution could scale with the gate width, indicating an intrinsic failure. Finally, the lifetime was extrapolated to 0.01% of failures for W-g=36mm at 150 degrees C after 20 years by fitting the data with a power law or an exponential law to gate voltages of 4.9V and 7.2V, respectively.
Keywords
AlGaN/GaN, Reliability, INSTABILITY, MIS-HEMT, MIS-FET, recessed gate, TDDB, PE-ALD SiN

Downloads

  • (...).pdf
    • full text
    • |
    • UGent only
    • |
    • PDF
    • |
    • 581.24 KB

Citation

Please use this url to cite or link to this publication:

MLA
Wu, TL et al. “Time Dependent Dielectric Breakdown (TDDB) Evaluation of PE-ALD SiN Gate Dielectrics on AlGaN/GaN Recessed Gate D-mode MIS-HEMTs and E-mode MIS-FETs.” International Reliability Physics Symposium. NEW YORK: IEEE, 2015. Print.
APA
Wu, T., Marcon, D., De Jaeger, B., Van Hove, M., Bakeroot, B., Stoffels, S., Groeseneken, G., et al. (2015). Time Dependent Dielectric Breakdown (TDDB) evaluation of PE-ALD SiN gate dielectrics on AlGaN/GaN recessed gate D-mode MIS-HEMTs and E-mode MIS-FETs. International Reliability Physics Symposium. Presented at the IEEE International Reliability Physics Symposium (IRPS), NEW YORK: IEEE.
Chicago author-date
Wu, TL, D Marcon, B De Jaeger, M Van Hove, Benoit Bakeroot, S Stoffels, G Groeseneken, and S Decoutere. 2015. “Time Dependent Dielectric Breakdown (TDDB) Evaluation of PE-ALD SiN Gate Dielectrics on AlGaN/GaN Recessed Gate D-mode MIS-HEMTs and E-mode MIS-FETs.” In International Reliability Physics Symposium. NEW YORK: IEEE.
Chicago author-date (all authors)
Wu, TL, D Marcon, B De Jaeger, M Van Hove, Benoit Bakeroot, S Stoffels, G Groeseneken, and S Decoutere. 2015. “Time Dependent Dielectric Breakdown (TDDB) Evaluation of PE-ALD SiN Gate Dielectrics on AlGaN/GaN Recessed Gate D-mode MIS-HEMTs and E-mode MIS-FETs.” In International Reliability Physics Symposium. NEW YORK: IEEE.
Vancouver
1.
Wu T, Marcon D, De Jaeger B, Van Hove M, Bakeroot B, Stoffels S, et al. Time Dependent Dielectric Breakdown (TDDB) evaluation of PE-ALD SiN gate dielectrics on AlGaN/GaN recessed gate D-mode MIS-HEMTs and E-mode MIS-FETs. International Reliability Physics Symposium. NEW YORK: IEEE; 2015.
IEEE
[1]
T. Wu et al., “Time Dependent Dielectric Breakdown (TDDB) evaluation of PE-ALD SiN gate dielectrics on AlGaN/GaN recessed gate D-mode MIS-HEMTs and E-mode MIS-FETs,” in International Reliability Physics Symposium, Monterey, CA, 2015.
@inproceedings{8032087,
  abstract     = {This paper reports a comprehensive time dependent dielectric breakdown (TDDB) evaluation of recessed-gate devices with five different AlGaN barrier thicknesses with characteristics ranging from a D-mode MIS-HEMT to an E-mode MIS-FET. First, the fitted parameter beta (the slope of the Weibull distribution) was smaller for a deeper recessed gate and larger for a thicker gate dielectric. Secondly, the extrapolated V-G (criterium of 0.01% failures after 20 years) for the devices with Wg (gate width) = 10 mu m was lower when less AlGaN barrier remains under the gate. However, the extrapolated VG was increased when the AlGaN barrier was completely removed. Thirdly, a deeper recessed gate could result in a dominant percolation path due to a thinner gate dielectric on the sidewall of the gate recess edge. Fourthly, the Weibull distribution could scale with the gate width, indicating an intrinsic failure. Finally, the lifetime was extrapolated to 0.01% of failures for W-g=36mm at 150 degrees C after 20 years by fitting the data with a power law or an exponential law to gate voltages of 4.9V and 7.2V, respectively.},
  author       = {Wu, TL and Marcon, D and De Jaeger, B and Van Hove, M and Bakeroot, Benoit and Stoffels, S and Groeseneken, G and Decoutere, S},
  booktitle    = {International Reliability Physics Symposium},
  isbn         = {978-1-4673-7362-3},
  issn         = {1541-7026},
  keywords     = {AlGaN/GaN,Reliability,INSTABILITY,MIS-HEMT,MIS-FET,recessed gate,TDDB,PE-ALD SiN},
  language     = {eng},
  location     = {Monterey, CA},
  pages        = {6},
  publisher    = {IEEE},
  title        = {Time Dependent Dielectric Breakdown (TDDB) evaluation of PE-ALD SiN gate dielectrics on AlGaN/GaN recessed gate D-mode MIS-HEMTs and E-mode MIS-FETs},
  year         = {2015},
}

Web of Science
Times cited: