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Abstract
In this work we investigate the origin of the resistance variability for the low resistive state in conductive bridging memory devices (CBRAM). We use C-AFM tomography to enable the three-dimensional observation of the filaments and correlate the presence of double-branched conductive filaments to the variability in the device performance.
Keywords
Double-filaments, CBRAM, scalpel SPM, MEMORIES, Resistive switching

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Citation

Please use this url to cite or link to this publication:

MLA
Celano, U et al. “Conductive Filaments Multiplicity as a Variability Factor in CBRAM.” International Reliability Physics Symposium. New York, NY, USA: IEEE, 2015. Print.
APA
Celano, U, Goux, L., Belmonte, A., Opsomer, K., Detavernier, C., Jurczak, M., & Vandervorst, W. (2015). Conductive filaments multiplicity as a variability factor in CBRAM. International Reliability Physics Symposium. Presented at the IEEE International Reliability Physics Symposium (IRPS), New York, NY, USA: IEEE.
Chicago author-date
Celano, U, L Goux, A Belmonte, K Opsomer, Christophe Detavernier, M Jurczak, and W Vandervorst. 2015. “Conductive Filaments Multiplicity as a Variability Factor in CBRAM.” In International Reliability Physics Symposium. New York, NY, USA: IEEE.
Chicago author-date (all authors)
Celano, U, L Goux, A Belmonte, K Opsomer, Christophe Detavernier, M Jurczak, and W Vandervorst. 2015. “Conductive Filaments Multiplicity as a Variability Factor in CBRAM.” In International Reliability Physics Symposium. New York, NY, USA: IEEE.
Vancouver
1.
Celano U, Goux L, Belmonte A, Opsomer K, Detavernier C, Jurczak M, et al. Conductive filaments multiplicity as a variability factor in CBRAM. International Reliability Physics Symposium. New York, NY, USA: IEEE; 2015.
IEEE
[1]
U. Celano et al., “Conductive filaments multiplicity as a variability factor in CBRAM,” in International Reliability Physics Symposium, Monterey, CA, USA, 2015.
@inproceedings{8030657,
  abstract     = {In this work we investigate the origin of the resistance variability for the low resistive state in conductive bridging memory devices (CBRAM). We use C-AFM tomography to enable the three-dimensional observation of the filaments and correlate the presence of double-branched conductive filaments to the variability in the device performance.},
  articleno    = {paper MY.11.1},
  author       = {Celano, U and Goux, L and Belmonte, A and Opsomer, K and Detavernier, Christophe and Jurczak, M and Vandervorst, W},
  booktitle    = {International Reliability Physics Symposium},
  isbn         = {978-1-4673-7362-3},
  issn         = {1541-7026},
  keywords     = {Double-filaments,CBRAM,scalpel SPM,MEMORIES,Resistive switching},
  language     = {eng},
  location     = {Monterey, CA, USA},
  pages        = {3},
  publisher    = {IEEE},
  title        = {Conductive filaments multiplicity as a variability factor in CBRAM},
  year         = {2015},
}

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