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High-k dielectrics for future generation memory devices (Invited Paper)

(2009) MICROELECTRONIC ENGINEERING. 86(7-9). p.1789-1795
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Keywords
ATOMIC LAYER DEPOSITION, SRTIO3 THIN-FILMS, OXIDES, KAPPA GATE DIELECTRICS, ELECTRICAL-PROPERTIES

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Citation

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MLA
Kittl, JA et al. “High-k Dielectrics for Future Generation Memory Devices (Invited Paper).” MICROELECTRONIC ENGINEERING 86.7-9 (2009): 1789–1795. Print.
APA
Kittl, J., Opsomer, K., Popovici, M., Menou, N., Kaczer, B., Wang, X., Adelmann, C., et al. (2009). High-k dielectrics for future generation memory devices (Invited Paper). MICROELECTRONIC ENGINEERING, 86(7-9), 1789–1795. Presented at the 16th Biennial Conference on Insulating Films on Semiconductors.
Chicago author-date
Kittl, JA, K Opsomer, M Popovici, N Menou, B Kaczer, XP Wang, C Adelmann, et al. 2009. “High-k Dielectrics for Future Generation Memory Devices (Invited Paper).” Microelectronic Engineering 86 (7-9): 1789–1795.
Chicago author-date (all authors)
Kittl, JA, K Opsomer, M Popovici, N Menou, B Kaczer, XP Wang, C Adelmann, MA Pawlak, K Tomida, A Rothschild, B Govoreanu, R Degraeve, M Schaekers, M Zahid, A Delabie, J Meersschaut, W Polspoel, S Clima, G Pourtois, Werner Knaepen, Christophe Detavernier, VV Afanas’ev, T Blomberg, D Pierreux, J Swerts, P Fischer, JW Maes, D Manger, W Vandervorst, T Conard, A Franquet, P Favia, H Bender, B Brijs, S Van Elshocht, M Jurczak, J Van Houdt, and DJ Wouters. 2009. “High-k Dielectrics for Future Generation Memory Devices (Invited Paper).” Microelectronic Engineering 86 (7-9): 1789–1795.
Vancouver
1.
Kittl J, Opsomer K, Popovici M, Menou N, Kaczer B, Wang X, et al. High-k dielectrics for future generation memory devices (Invited Paper). MICROELECTRONIC ENGINEERING. AMSTERDAM: Elsevier Science; 2009;86(7-9):1789–95.
IEEE
[1]
J. Kittl et al., “High-k dielectrics for future generation memory devices (Invited Paper),” MICROELECTRONIC ENGINEERING, vol. 86, no. 7–9, pp. 1789–1795, 2009.
@article{788904,
  author       = {Kittl, JA and Opsomer, K and Popovici, M and Menou, N and Kaczer, B and Wang, XP and Adelmann, C and Pawlak, MA and Tomida, K and Rothschild, A and Govoreanu, B and Degraeve, R and Schaekers, M and Zahid, M and Delabie, A and Meersschaut, J and Polspoel, W and Clima, S and Pourtois, G and Knaepen, Werner and Detavernier, Christophe and Afanas'ev, VV and Blomberg, T and Pierreux, D and Swerts, J and Fischer, P and Maes, JW and Manger, D and Vandervorst, W and Conard, T and Franquet, A and Favia, P and Bender, H and Brijs, B and Van Elshocht, S and Jurczak, M and Van Houdt, J and Wouters, DJ},
  issn         = {0167-9317},
  journal      = {MICROELECTRONIC ENGINEERING},
  keywords     = {ATOMIC LAYER DEPOSITION,SRTIO3 THIN-FILMS,OXIDES,KAPPA GATE DIELECTRICS,ELECTRICAL-PROPERTIES},
  language     = {eng},
  location     = {Cambridge, ENGLAND},
  number       = {7-9},
  pages        = {1789--1795},
  publisher    = {Elsevier Science},
  title        = {High-k dielectrics for future generation memory devices (Invited Paper)},
  url          = {http://dx.doi.org/10.1016/j.mee.2009.03.045},
  volume       = {86},
  year         = {2009},
}

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