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Growth and Material Characterization of Hafnium Titanates Deposited by Atomic Layer Deposition

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Abstract
Hafnium titanate (HTO) films were deposited within a large Hf-Ti compositional range by atomic layer deposition using HfCl4/TiCl4/H2O precursors. The Hf content of the layers is well controlled by the precursor pulse ratio, as indicated by Rutherford backscattering. The saturation conditions of ternary HTOs are different compared to those of the binary oxides, First-principles simulation confirmed the enhancement of the Hf precursor reactivity in the presence of Ti-OH. Growth curves of HTOs showed a good linearity with the number of reaction cycles. A linear correlation between density, quantified by X-ray reflectometry, and composition was observed. X-ray diffraction indicated that the as-deposited films are amorphous up to 500-700 degrees C, depending on the Hf/Ti ratio. The orthorhombic HfTiO4 diffraction lines in the samples (30-64% Hf) annealed at 850 degrees C were observed. For a Hf content higher than 82%, a monoclinic HfO2-Iike structure was reported. The dielectric constant and leakage current depend on the Ti content, the film crystallinity, and the anneal atmosphere. The posideposition anneal in O-2, is found to have a drastic effect in leakage Current density reduction and could be a key for further improvements of HTO electrical properties.

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MLA
Popovici, M et al. “Growth and Material Characterization of Hafnium Titanates Deposited by Atomic Layer Deposition.” JOURNAL OF THE ELECTROCHEMICAL SOCIETY 156.10 (2009): G145–G151. Print.
APA
Popovici, M., Delabie, A., Van Elshocht, S., Clima, S., Pourtois, G., Nyns, L., Tomida, K., et al. (2009). Growth and Material Characterization of Hafnium Titanates Deposited by Atomic Layer Deposition. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 156(10), G145–G151.
Chicago author-date
Popovici, M, A Delabie, S Van Elshocht, S Clima, G Pourtois, L Nyns, K Tomida, et al. 2009. “Growth and Material Characterization of Hafnium Titanates Deposited by Atomic Layer Deposition.” Journal of the Electrochemical Society 156 (10): G145–G151.
Chicago author-date (all authors)
Popovici, M, A Delabie, S Van Elshocht, S Clima, G Pourtois, L Nyns, K Tomida, N Menou, K Opsomer, J Swerts, Christophe Detavernier, D Wouters, and J Kittl. 2009. “Growth and Material Characterization of Hafnium Titanates Deposited by Atomic Layer Deposition.” Journal of the Electrochemical Society 156 (10): G145–G151.
Vancouver
1.
Popovici M, Delabie A, Van Elshocht S, Clima S, Pourtois G, Nyns L, et al. Growth and Material Characterization of Hafnium Titanates Deposited by Atomic Layer Deposition. JOURNAL OF THE ELECTROCHEMICAL SOCIETY. 2009;156(10):G145–G151.
IEEE
[1]
M. Popovici et al., “Growth and Material Characterization of Hafnium Titanates Deposited by Atomic Layer Deposition,” JOURNAL OF THE ELECTROCHEMICAL SOCIETY, vol. 156, no. 10, pp. G145–G151, 2009.
@article{783305,
  abstract     = {Hafnium titanate (HTO) films were deposited within a large Hf-Ti compositional range by atomic layer deposition using HfCl4/TiCl4/H2O precursors. The Hf content of the layers is well controlled by the precursor pulse ratio, as indicated by Rutherford backscattering. The saturation conditions of ternary HTOs are different compared to those of the binary oxides, First-principles simulation confirmed the enhancement of the Hf precursor reactivity in the presence of Ti-OH. Growth curves of HTOs showed a good linearity with the number of reaction cycles. A linear correlation between density, quantified by X-ray reflectometry, and composition was observed. X-ray diffraction indicated that the as-deposited films are amorphous up to 500-700 degrees C, depending on the Hf/Ti ratio. The orthorhombic HfTiO4 diffraction lines in the samples (30-64% Hf) annealed at 850 degrees C were observed. For a Hf content higher than 82%, a monoclinic HfO2-Iike structure was reported. The dielectric constant and leakage current depend on the Ti content, the film crystallinity, and the anneal atmosphere. The posideposition anneal in O-2, is found to have a drastic effect in leakage Current density reduction and could be a key for further improvements of HTO electrical properties.},
  author       = {Popovici, M and Delabie, A and Van Elshocht, S and Clima, S and Pourtois, G and Nyns, L and Tomida, K and Menou, N and Opsomer, K and Swerts, J and Detavernier, Christophe and Wouters, D and Kittl, J},
  issn         = {0013-4651},
  journal      = {JOURNAL OF THE ELECTROCHEMICAL SOCIETY},
  language     = {eng},
  number       = {10},
  pages        = {G145--G151},
  title        = {Growth and Material Characterization of Hafnium Titanates Deposited by Atomic Layer Deposition},
  url          = {http://dx.doi.org/10.1149/1.3186020},
  volume       = {156},
  year         = {2009},
}

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