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Low driving voltage band-filling-based III-V-on-silicon electroabsorption modulator

Author
Organization
Project
Center for nano- and biophotonics (NB-Photonics)
Keywords
PHOTONICS, FREE-CARRIER, GB/S

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Citation

Please use this url to cite or link to this publication:

Chicago
Huang, QS, YC Wu, KQ Ma, JH Zhang, Weiqiang Xie, Xin Fu, YC Shi, et al. 2016. “Low Driving Voltage Band-filling-based III-V-on-silicon Electroabsorption Modulator.” Applied Physics Letters 108 (14).
APA
Huang, QS, Wu, Y., Ma, K., Zhang, J., Xie, W., Fu, X., Shi, Y., et al. (2016). Low driving voltage band-filling-based III-V-on-silicon electroabsorption modulator. APPLIED PHYSICS LETTERS, 108(14).
Vancouver
1.
Huang Q, Wu Y, Ma K, Zhang J, Xie W, Fu X, et al. Low driving voltage band-filling-based III-V-on-silicon electroabsorption modulator. APPLIED PHYSICS LETTERS. 2016;108(14).
MLA
Huang, QS et al. “Low Driving Voltage Band-filling-based III-V-on-silicon Electroabsorption Modulator.” APPLIED PHYSICS LETTERS 108.14 (2016): n. pag. Print.
@article{7277091,
  articleno    = {141104},
  author       = {Huang, QS and Wu, YC and Ma, KQ and Zhang, JH and Xie, Weiqiang and Fu, Xin and Shi, YC and Chen, KX and He, JJ and Van Thourhout, Dries and Roelkens, G{\"u}nther and Liu, L and He, SL},
  issn         = {0003-6951},
  journal      = {APPLIED PHYSICS LETTERS},
  language     = {eng},
  number       = {14},
  title        = {Low driving voltage band-filling-based III-V-on-silicon electroabsorption modulator},
  url          = {http://dx.doi.org/10.1063/1.4945666},
  volume       = {108},
  year         = {2016},
}

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