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Quantitative analysis of TM lateral leakage in foundry fabricated silicon Rib waveguides

Anthony P. Hope, Thach G. Nguyen, Arnan Mitchell and Wim Bogaerts UGent (2016) IEEE PHOTONICS TECHNOLOGY LETTERS. 28(4). p.493-496
abstract
We show that thin, shallow ridge, silicon-on-insulator waveguides exhibiting a lateral leakage behavior can be designed and fabricated using a standard silicon photonic foundry platform. We analyze the propagation loss through the observation of the transmitted TM polarized guided mode and TE polarized radiation and experimentally demonstrate that propagation losses as low as 0.087 dB/mm can be achieved. This demonstration will open a new frontier for practical devices exploiting a lateral leakage behavior with potential applications in the fields of biosensing and quantum optics among others.
Please use this url to cite or link to this publication:
author
organization
year
type
journalArticle (original)
publication status
published
subject
keyword
COUPLERS, CIRCUITS, MODE, Silicon-on-insulator, integrated circuit technology, optical waveguides
journal title
IEEE PHOTONICS TECHNOLOGY LETTERS
volume
28
issue
4
pages
493 - 496
Web of Science type
Article
Web of Science id
000370920700030
JCR category
PHYSICS, APPLIED
JCR impact factor
2.375 (2016)
JCR rank
51/147 (2016)
JCR quartile
2 (2016)
ISSN
1041-1135
DOI
10.1109/LPT.2015.2500233
project
Center for nano- and biophotonics (NB-Photonics)
language
English
UGent publication?
yes
classification
A1
copyright statement
I have transferred the copyright for this publication to the publisher
id
7276572
handle
http://hdl.handle.net/1854/LU-7276572
date created
2016-06-21 12:44:25
date last changed
2016-12-19 15:42:32
@article{7276572,
  abstract     = {We show that thin, shallow ridge, silicon-on-insulator waveguides exhibiting a lateral leakage behavior can be designed and fabricated using a standard silicon photonic foundry platform. We analyze the propagation loss through the observation of the transmitted TM polarized guided mode and TE polarized radiation and experimentally demonstrate that propagation losses as low as 0.087 dB/mm can be achieved. This demonstration will open a new frontier for practical devices exploiting a lateral leakage behavior with potential applications in the fields of biosensing and quantum optics among others.},
  author       = {Hope, Anthony P. and Nguyen, Thach G. and Mitchell, Arnan and Bogaerts, Wim},
  issn         = {1041-1135},
  journal      = {IEEE PHOTONICS TECHNOLOGY LETTERS},
  keyword      = {COUPLERS,CIRCUITS,MODE,Silicon-on-insulator,integrated circuit technology,optical waveguides},
  language     = {eng},
  number       = {4},
  pages        = {493--496},
  title        = {Quantitative analysis of TM lateral leakage in foundry fabricated silicon Rib waveguides},
  url          = {http://dx.doi.org/10.1109/LPT.2015.2500233},
  volume       = {28},
  year         = {2016},
}

Chicago
Hope, Anthony P., Thach G. Nguyen, Arnan Mitchell, and Wim Bogaerts. 2016. “Quantitative Analysis of TM Lateral Leakage in Foundry Fabricated Silicon Rib Waveguides.” Ieee Photonics Technology Letters 28 (4): 493–496.
APA
Hope, A. P., Nguyen, T. G., Mitchell, A., & Bogaerts, W. (2016). Quantitative analysis of TM lateral leakage in foundry fabricated silicon Rib waveguides. IEEE PHOTONICS TECHNOLOGY LETTERS, 28(4), 493–496.
Vancouver
1.
Hope AP, Nguyen TG, Mitchell A, Bogaerts W. Quantitative analysis of TM lateral leakage in foundry fabricated silicon Rib waveguides. IEEE PHOTONICS TECHNOLOGY LETTERS. 2016;28(4):493–6.
MLA
Hope, Anthony P., Thach G. Nguyen, Arnan Mitchell, et al. “Quantitative Analysis of TM Lateral Leakage in Foundry Fabricated Silicon Rib Waveguides.” IEEE PHOTONICS TECHNOLOGY LETTERS 28.4 (2016): 493–496. Print.