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20-Gb/s modulation of silicon-integrated short-wavelength hybrid-cavity VCSELs

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Center for nano- and biophotonics (NB-Photonics)
Abstract
We investigate the dynamics of silicon-integrated 850-nm-wavelength hybrid-cavity vertical-cavity surface-emitting lasers (VCSELs). The VCSELs consist of a GaAs-based half-VCSEL attached to a dielectric distributed Bragg reflector on a silicon substrate using ultra-thin divinylsiloxane-bis-benzocyclobutene adhesive bonding. A 5-mu m oxide aperture diameter VCSEL, with a small signal modulation bandwidth of 11 GHz, supports data transmission at bit rates up to 20 Gb/s. The modulation bandwidth and the large signal modulation characteristics are found to be impaired by the high thermal impedance.
Keywords
silicon photonics, semiconductor lasers, vertical-cavity surface-emitting laser (VCSEL), ENERGY, SOI, High-speed modulation, large signal modulation, optical interconnects, SUBSTRATE, GBIT/S, SURFACE-EMITTING LASERS, IMPACT, PERFORMANCE

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Citation

Please use this url to cite or link to this publication:

Chicago
Haglund, Emanuel P, Sulakshna Kumari, Petter Westbergh, Johan S Gustavsson, Roel Baets, Günther Roelkens, and Anders Larsson. 2016. “20-Gb/s Modulation of Silicon-integrated Short-wavelength Hybrid-cavity VCSELs.” Ieee Photonics Technology Letters 28 (8): 856–859.
APA
Haglund, E. P., Kumari, S., Westbergh, P., Gustavsson, J. S., Baets, R., Roelkens, G., & Larsson, A. (2016). 20-Gb/s modulation of silicon-integrated short-wavelength hybrid-cavity VCSELs. IEEE PHOTONICS TECHNOLOGY LETTERS, 28(8), 856–859.
Vancouver
1.
Haglund EP, Kumari S, Westbergh P, Gustavsson JS, Baets R, Roelkens G, et al. 20-Gb/s modulation of silicon-integrated short-wavelength hybrid-cavity VCSELs. IEEE PHOTONICS TECHNOLOGY LETTERS. 2016;28(8):856–9.
MLA
Haglund, Emanuel P, Sulakshna Kumari, Petter Westbergh, et al. “20-Gb/s Modulation of Silicon-integrated Short-wavelength Hybrid-cavity VCSELs.” IEEE PHOTONICS TECHNOLOGY LETTERS 28.8 (2016): 856–859. Print.
@article{7276306,
  abstract     = {We investigate the dynamics of silicon-integrated 850-nm-wavelength hybrid-cavity vertical-cavity surface-emitting lasers (VCSELs). The VCSELs consist of a GaAs-based half-VCSEL attached to a dielectric distributed Bragg reflector on a silicon substrate using ultra-thin divinylsiloxane-bis-benzocyclobutene adhesive bonding. A 5-mu m oxide aperture diameter VCSEL, with a small signal modulation bandwidth of 11 GHz, supports data transmission at bit rates up to 20 Gb/s. The modulation bandwidth and the large signal modulation characteristics are found to be impaired by the high thermal impedance.},
  author       = {Haglund, Emanuel P and Kumari, Sulakshna and Westbergh, Petter and Gustavsson, Johan S and Baets, Roel and Roelkens, G{\"u}nther and Larsson, Anders},
  issn         = {1041-1135},
  journal      = {IEEE PHOTONICS TECHNOLOGY LETTERS},
  keyword      = {silicon photonics,semiconductor lasers,vertical-cavity surface-emitting laser (VCSEL),ENERGY,SOI,High-speed modulation,large signal modulation,optical interconnects,SUBSTRATE,GBIT/S,SURFACE-EMITTING LASERS,IMPACT,PERFORMANCE},
  language     = {eng},
  number       = {8},
  pages        = {856--859},
  title        = {20-Gb/s modulation of silicon-integrated short-wavelength hybrid-cavity VCSELs},
  url          = {http://dx.doi.org/10.1109/LPT.2016.2514699},
  volume       = {28},
  year         = {2016},
}

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