Carrier lifetime assessment in integrated Ge waveguide devices
- Author
- Srinivasan Ashwyn Srinivasan (UGent) , M Pantouvaki, P Verheyen, G Lepage, P Absil, J Van Campenhout and Dries Van Thourhout (UGent)
- Organization
- Project
- Abstract
- Carrier lifetimes in Ge waveguides on Si are deduced from time-resolved pump-probe spectroscopy. For a 1 pm wide Ge waveguide, a lifetime of 1.6 ns is estimated for a carrier density of around 2 x10(19) cm(-3).
- Keywords
- Optical interconnects, Waveguide modulator, Silicon photonics
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Citation
Please use this url to cite or link to this publication: http://hdl.handle.net/1854/LU-7196850
- MLA
- Srinivasan, Srinivasan Ashwyn, et al. “Carrier Lifetime Assessment in Integrated Ge Waveguide Devices.” IEEE International Conference on Group IV Photonics, 2015, pp. 167–68.
- APA
- Srinivasan, S. A., Pantouvaki, M., Verheyen, P., Lepage, G., Absil, P., Van Campenhout, J., & Van Thourhout, D. (2015). Carrier lifetime assessment in integrated Ge waveguide devices. IEEE International Conference on Group IV Photonics, 167–168.
- Chicago author-date
- Srinivasan, Srinivasan Ashwyn, M Pantouvaki, P Verheyen, G Lepage, P Absil, J Van Campenhout, and Dries Van Thourhout. 2015. “Carrier Lifetime Assessment in Integrated Ge Waveguide Devices.” In IEEE International Conference on Group IV Photonics, 167–68.
- Chicago author-date (all authors)
- Srinivasan, Srinivasan Ashwyn, M Pantouvaki, P Verheyen, G Lepage, P Absil, J Van Campenhout, and Dries Van Thourhout. 2015. “Carrier Lifetime Assessment in Integrated Ge Waveguide Devices.” In IEEE International Conference on Group IV Photonics, 167–168.
- Vancouver
- 1.Srinivasan SA, Pantouvaki M, Verheyen P, Lepage G, Absil P, Van Campenhout J, et al. Carrier lifetime assessment in integrated Ge waveguide devices. In: IEEE International Conference on Group IV Photonics. 2015. p. 167–8.
- IEEE
- [1]S. A. Srinivasan et al., “Carrier lifetime assessment in integrated Ge waveguide devices,” in IEEE International Conference on Group IV Photonics, Vancouver, Canada, 2015, pp. 167–168.
@inproceedings{7196850, abstract = {{Carrier lifetimes in Ge waveguides on Si are deduced from time-resolved pump-probe spectroscopy. For a 1 pm wide Ge waveguide, a lifetime of 1.6 ns is estimated for a carrier density of around 2 x10(19) cm(-3).}}, author = {{Srinivasan, Srinivasan Ashwyn and Pantouvaki, M and Verheyen, P and Lepage, G and Absil, P and Van Campenhout, J and Van Thourhout, Dries}}, booktitle = {{IEEE International Conference on Group IV Photonics}}, isbn = {{978-1-4799-8254-7}}, issn = {{1949-2081}}, keywords = {{Optical interconnects,Waveguide modulator,Silicon photonics}}, language = {{eng}}, location = {{Vancouver, Canada}}, pages = {{167--168}}, title = {{Carrier lifetime assessment in integrated Ge waveguide devices}}, year = {{2015}}, }