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Carrier lifetime assessment in integrated Ge waveguide devices

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Abstract
Carrier lifetimes in Ge waveguides on Si are deduced from time-resolved pump-probe spectroscopy. For a 1 pm wide Ge waveguide, a lifetime of 1.6 ns is estimated for a carrier density of around 2 x10(19) cm(-3).
Keywords
Optical interconnects, Waveguide modulator, Silicon photonics

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Citation

Please use this url to cite or link to this publication:

MLA
Srinivasan, Srinivasan Ashwyn, et al. “Carrier Lifetime Assessment in Integrated Ge Waveguide Devices.” IEEE International Conference on Group IV Photonics, 2015, pp. 167–68.
APA
Srinivasan, S. A., Pantouvaki, M., Verheyen, P., Lepage, G., Absil, P., Van Campenhout, J., & Van Thourhout, D. (2015). Carrier lifetime assessment in integrated Ge waveguide devices. IEEE International Conference on Group IV Photonics, 167–168.
Chicago author-date
Srinivasan, Srinivasan Ashwyn, M Pantouvaki, P Verheyen, G Lepage, P Absil, J Van Campenhout, and Dries Van Thourhout. 2015. “Carrier Lifetime Assessment in Integrated Ge Waveguide Devices.” In IEEE International Conference on Group IV Photonics, 167–68.
Chicago author-date (all authors)
Srinivasan, Srinivasan Ashwyn, M Pantouvaki, P Verheyen, G Lepage, P Absil, J Van Campenhout, and Dries Van Thourhout. 2015. “Carrier Lifetime Assessment in Integrated Ge Waveguide Devices.” In IEEE International Conference on Group IV Photonics, 167–168.
Vancouver
1.
Srinivasan SA, Pantouvaki M, Verheyen P, Lepage G, Absil P, Van Campenhout J, et al. Carrier lifetime assessment in integrated Ge waveguide devices. In: IEEE International Conference on Group IV Photonics. 2015. p. 167–8.
IEEE
[1]
S. A. Srinivasan et al., “Carrier lifetime assessment in integrated Ge waveguide devices,” in IEEE International Conference on Group IV Photonics, Vancouver, Canada, 2015, pp. 167–168.
@inproceedings{7196850,
  abstract     = {{Carrier lifetimes in Ge waveguides on Si are deduced from time-resolved pump-probe spectroscopy. For a 1 pm wide Ge waveguide, a lifetime of 1.6 ns is estimated for a carrier density of around 2 x10(19) cm(-3).}},
  author       = {{Srinivasan, Srinivasan Ashwyn and Pantouvaki, M and Verheyen, P and Lepage, G and Absil, P and Van Campenhout, J and Van Thourhout, Dries}},
  booktitle    = {{IEEE International Conference on Group IV Photonics}},
  isbn         = {{978-1-4799-8254-7}},
  issn         = {{1949-2081}},
  keywords     = {{Optical interconnects,Waveguide modulator,Silicon photonics}},
  language     = {{eng}},
  location     = {{Vancouver, Canada}},
  pages        = {{167--168}},
  title        = {{Carrier lifetime assessment in integrated Ge waveguide devices}},
  year         = {{2015}},
}

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