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IIIV/Si hybrid integrated devices for optical interconnect

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Center for nano- and biophotonics (NB-Photonics)
Abstract
We discuss our view of the on-chip optical interconnect infrastructure for future multi-core processers based on wavelength-division-multiplexing (WDM) and our recent results on some key devices for such structures. Cascading performance of various wavelength multiplexers and de-multiplexers including arrayed waveguide gratings (AWGs) and echelle gratings based on the silicon-on-insulator platform are discussed and compared. IIIV based electro-absorption (EA) modulators on silicon realized through benzocyclobutene (BCB) adhesive bonding are analyzed. Ultra short adiabatic taper based mode converters between passive and active structures are designed. The integration of multi-channel modulators, detectors and wavelength de-multiplexers is realized.
Keywords
wavelength division multiplexer, optical interconnect, hybrid integration, electro-absorption modulator, CMOS TECHNOLOGY, SILICON

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Citation

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Chicago
Chen, Kaixuan, Yuntao Zhu, Jianxin Cheng, Qiangsheng Huang, Xin Fu, Jianhao Zhang, Yaocheng Shi, Jin Liu, Günther Roelkens, and Liu Liu. 2015. “IIIV/Si Hybrid Integrated Devices for Optical Interconnect.” In Proceedings of SPIE. Vol. 9366.
APA
Chen, Kaixuan, Zhu, Y., Cheng, J., Huang, Q., Fu, X., Zhang, J., Shi, Y., et al. (2015). IIIV/Si hybrid integrated devices for optical interconnect. Proceedings of SPIE (Vol. 9366). Presented at the Conference on Smart Photonic and Optoelectronic Integrated Circuits XVII.
Vancouver
1.
Chen K, Zhu Y, Cheng J, Huang Q, Fu X, Zhang J, et al. IIIV/Si hybrid integrated devices for optical interconnect. Proceedings of SPIE. 2015.
MLA
Chen, Kaixuan, Yuntao Zhu, Jianxin Cheng, et al. “IIIV/Si Hybrid Integrated Devices for Optical Interconnect.” Proceedings of SPIE. Vol. 9366. 2015. Print.
@inproceedings{7196241,
  abstract     = {We discuss our view of the on-chip optical interconnect infrastructure for future multi-core processers based on wavelength-division-multiplexing (WDM) and our recent results on some key devices for such structures. Cascading performance of various wavelength multiplexers and de-multiplexers including arrayed waveguide gratings (AWGs) and echelle gratings based on the silicon-on-insulator platform are discussed and compared. IIIV based electro-absorption (EA) modulators on silicon realized through benzocyclobutene (BCB) adhesive bonding are analyzed. Ultra short adiabatic taper based mode converters between passive and active structures are designed. The integration of multi-channel modulators, detectors and wavelength de-multiplexers is realized.},
  articleno    = {93660I},
  author       = {Chen, Kaixuan and Zhu, Yuntao and Cheng, Jianxin and Huang, Qiangsheng and Fu, Xin and Zhang, Jianhao and Shi, Yaocheng and Liu, Jin and Roelkens, G{\"u}nther and Liu, Liu},
  booktitle    = {Proceedings of SPIE},
  isbn         = {978-1-62841-456-1},
  issn         = {0277-786X},
  language     = {eng},
  location     = {San Francisco, CA},
  title        = {IIIV/Si hybrid integrated devices for optical interconnect},
  url          = {http://dx.doi.org/10.1117/12.2085682},
  volume       = {9366},
  year         = {2015},
}

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