Enhanced active P doping by using high order Ge precursors leading to intense photoluminescence
- Author
- Yosuke Shimura, Srinivasan Ashwyn Srinivasan (UGent) , Dries Van Thourhout (UGent) , Rik Van Deun (UGent) , Marianna Pantouvaki, Joris Van Campenhout and Roger Loo
- Organization
- Project
- Keywords
- Germanium, Phosphorus, Doping, Laser, Strain, Quasi-direct band gap, Chemical vapor deposition, GERMANIUM, SI, MOBILITY, GROWTH, LAYERS
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Citation
Please use this url to cite or link to this publication: http://hdl.handle.net/1854/LU-7166436
- MLA
- Shimura, Yosuke, et al. “Enhanced Active P Doping by Using High Order Ge Precursors Leading to Intense Photoluminescence.” THIN SOLID FILMS, vol. 602, 2016, pp. 56–59, doi:10.1016/j.tsf.2015.07.071.
- APA
- Shimura, Y., Srinivasan, S. A., Van Thourhout, D., Van Deun, R., Pantouvaki, M., Van Campenhout, J., & Loo, R. (2016). Enhanced active P doping by using high order Ge precursors leading to intense photoluminescence. THIN SOLID FILMS, 602, 56–59. https://doi.org/10.1016/j.tsf.2015.07.071
- Chicago author-date
- Shimura, Yosuke, Srinivasan Ashwyn Srinivasan, Dries Van Thourhout, Rik Van Deun, Marianna Pantouvaki, Joris Van Campenhout, and Roger Loo. 2016. “Enhanced Active P Doping by Using High Order Ge Precursors Leading to Intense Photoluminescence.” THIN SOLID FILMS 602: 56–59. https://doi.org/10.1016/j.tsf.2015.07.071.
- Chicago author-date (all authors)
- Shimura, Yosuke, Srinivasan Ashwyn Srinivasan, Dries Van Thourhout, Rik Van Deun, Marianna Pantouvaki, Joris Van Campenhout, and Roger Loo. 2016. “Enhanced Active P Doping by Using High Order Ge Precursors Leading to Intense Photoluminescence.” THIN SOLID FILMS 602: 56–59. doi:10.1016/j.tsf.2015.07.071.
- Vancouver
- 1.Shimura Y, Srinivasan SA, Van Thourhout D, Van Deun R, Pantouvaki M, Van Campenhout J, et al. Enhanced active P doping by using high order Ge precursors leading to intense photoluminescence. THIN SOLID FILMS. 2016;602:56–9.
- IEEE
- [1]Y. Shimura et al., “Enhanced active P doping by using high order Ge precursors leading to intense photoluminescence,” THIN SOLID FILMS, vol. 602, pp. 56–59, 2016.
@article{7166436, author = {{Shimura, Yosuke and Srinivasan, Srinivasan Ashwyn and Van Thourhout, Dries and Van Deun, Rik and Pantouvaki, Marianna and Van Campenhout, Joris and Loo, Roger}}, issn = {{0040-6090}}, journal = {{THIN SOLID FILMS}}, keywords = {{Germanium,Phosphorus,Doping,Laser,Strain,Quasi-direct band gap,Chemical vapor deposition,GERMANIUM,SI,MOBILITY,GROWTH,LAYERS}}, language = {{eng}}, location = {{Montréal, QC, Canada}}, pages = {{56--59}}, title = {{Enhanced active P doping by using high order Ge precursors leading to intense photoluminescence}}, url = {{http://doi.org/10.1016/j.tsf.2015.07.071}}, volume = {{602}}, year = {{2016}}, }
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