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Enhanced active P doping by using high order Ge precursors leading to intense photoluminescence

(2016) THIN SOLID FILMS. 602. p.56-59
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Keywords
Germanium, Phosphorus, Doping, Laser, Strain, Quasi-direct band gap, Chemical vapor deposition, GERMANIUM, SI, MOBILITY, GROWTH, LAYERS

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Citation

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MLA
Shimura, Yosuke, et al. “Enhanced Active P Doping by Using High Order Ge Precursors Leading to Intense Photoluminescence.” THIN SOLID FILMS, vol. 602, 2016, pp. 56–59, doi:10.1016/j.tsf.2015.07.071.
APA
Shimura, Y., Srinivasan, S. A., Van Thourhout, D., Van Deun, R., Pantouvaki, M., Van Campenhout, J., & Loo, R. (2016). Enhanced active P doping by using high order Ge precursors leading to intense photoluminescence. THIN SOLID FILMS, 602, 56–59. https://doi.org/10.1016/j.tsf.2015.07.071
Chicago author-date
Shimura, Yosuke, Srinivasan Ashwyn Srinivasan, Dries Van Thourhout, Rik Van Deun, Marianna Pantouvaki, Joris Van Campenhout, and Roger Loo. 2016. “Enhanced Active P Doping by Using High Order Ge Precursors Leading to Intense Photoluminescence.” THIN SOLID FILMS 602: 56–59. https://doi.org/10.1016/j.tsf.2015.07.071.
Chicago author-date (all authors)
Shimura, Yosuke, Srinivasan Ashwyn Srinivasan, Dries Van Thourhout, Rik Van Deun, Marianna Pantouvaki, Joris Van Campenhout, and Roger Loo. 2016. “Enhanced Active P Doping by Using High Order Ge Precursors Leading to Intense Photoluminescence.” THIN SOLID FILMS 602: 56–59. doi:10.1016/j.tsf.2015.07.071.
Vancouver
1.
Shimura Y, Srinivasan SA, Van Thourhout D, Van Deun R, Pantouvaki M, Van Campenhout J, et al. Enhanced active P doping by using high order Ge precursors leading to intense photoluminescence. THIN SOLID FILMS. 2016;602:56–9.
IEEE
[1]
Y. Shimura et al., “Enhanced active P doping by using high order Ge precursors leading to intense photoluminescence,” THIN SOLID FILMS, vol. 602, pp. 56–59, 2016.
@article{7166436,
  author       = {{Shimura, Yosuke and Srinivasan, Srinivasan Ashwyn and Van Thourhout, Dries and Van Deun, Rik and Pantouvaki, Marianna and Van Campenhout, Joris and Loo, Roger}},
  issn         = {{0040-6090}},
  journal      = {{THIN SOLID FILMS}},
  keywords     = {{Germanium,Phosphorus,Doping,Laser,Strain,Quasi-direct band gap,Chemical vapor deposition,GERMANIUM,SI,MOBILITY,GROWTH,LAYERS}},
  language     = {{eng}},
  location     = {{Montréal, QC, Canada}},
  pages        = {{56--59}},
  title        = {{Enhanced active P doping by using high order Ge precursors leading to intense photoluminescence}},
  url          = {{http://doi.org/10.1016/j.tsf.2015.07.071}},
  volume       = {{602}},
  year         = {{2016}},
}

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