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The influence of Ni thickness on the formation of Nickel silicides was systematically investigated between 0 and 15nm. Annealing thickness gradients distinguishes films that agglomerate (>5nm) and films that are morphologically stable (<5nm). Alloying the initial Ni layer influences this critical thickness to higher (Al, Co) and lower (Ge, Pd, Pt) values. Pole figures and in situ XRD provides information to understand this observed shift in critical thickness.
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MLA
Geenen, Filip, et al. “Influence of Alloying Elements on the Phase Formation of Ultrathin Ni (<10nm) on Si(001) Substrates.” 2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM), IEEE, 2015, pp. 183–85, doi:10.1109/IITC-MAM.2015.7325615.
APA
Geenen, F., Van Stiphout, K., Jordan-Sweet, J., Vantomme, A., Lavoie, C., & Detavernier, C. (2015). Influence of alloying elements on the phase formation of ultrathin Ni (<10nm) on Si(001) substrates. 2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM), 183–185. https://doi.org/10.1109/IITC-MAM.2015.7325615
Chicago author-date
Geenen, Filip, Koen Van Stiphout, Jean Jordan-Sweet, André Vantomme, Christian Lavoie, and Christophe Detavernier. 2015. “Influence of Alloying Elements on the Phase Formation of Ultrathin Ni (<10nm) on Si(001) Substrates.” In 2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM), 183–85. New York, NY, USA: IEEE. https://doi.org/10.1109/IITC-MAM.2015.7325615.
Chicago author-date (all authors)
Geenen, Filip, Koen Van Stiphout, Jean Jordan-Sweet, André Vantomme, Christian Lavoie, and Christophe Detavernier. 2015. “Influence of Alloying Elements on the Phase Formation of Ultrathin Ni (<10nm) on Si(001) Substrates.” In 2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM), 183–185. New York, NY, USA: IEEE. doi:10.1109/IITC-MAM.2015.7325615.
Vancouver
1.
Geenen F, Van Stiphout K, Jordan-Sweet J, Vantomme A, Lavoie C, Detavernier C. Influence of alloying elements on the phase formation of ultrathin Ni (<10nm) on Si(001) substrates. In: 2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM). New York, NY, USA: IEEE; 2015. p. 183–5.
IEEE
[1]
F. Geenen, K. Van Stiphout, J. Jordan-Sweet, A. Vantomme, C. Lavoie, and C. Detavernier, “Influence of alloying elements on the phase formation of ultrathin Ni (<10nm) on Si(001) substrates,” in 2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM), Grenoble, France, 2015, pp. 183–185.
@inproceedings{7063986,
  abstract     = {{The influence of Ni thickness on the formation of Nickel silicides was systematically investigated between 0 and 15nm. Annealing thickness gradients distinguishes films that agglomerate (>5nm) and films that are morphologically stable (<5nm). Alloying the initial Ni layer influences this critical thickness to higher (Al, Co) and lower (Ge, Pd, Pt) values. Pole figures and in situ XRD provides information to understand this observed shift in critical thickness.}},
  author       = {{Geenen, Filip and Van Stiphout, Koen and Jordan-Sweet, Jean and Vantomme, André and Lavoie, Christian and Detavernier, Christophe}},
  booktitle    = {{2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM)}},
  isbn         = {{9781467373562}},
  keywords     = {{FILMS}},
  language     = {{eng}},
  location     = {{Grenoble, France}},
  pages        = {{183--185}},
  publisher    = {{IEEE}},
  title        = {{Influence of alloying elements on the phase formation of ultrathin Ni (<10nm) on Si(001) substrates}},
  url          = {{http://doi.org/10.1109/IITC-MAM.2015.7325615}},
  year         = {{2015}},
}

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