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The influence of Al alloying on silicide formation, morphology and texture between a thin (<20 nm) Ni film and Si(001)

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Abstract
The influence of Al on the phase formation between Ni and Si(001) was investigated by altering the Al concentration and the Ni thickness. In a first series of samples, 20 nm Ni on a Si (001) substrate was alloyed between 0 and 50 at. % Al. The phase formation was examined during heating by sheet resistance and XRD. Small additions of Al (0- 28%) in the Ni layer result in a mono-silicide layer. Polefigure measurements indicate that the axiotaxial texture of NiSi is less prominent and that the grain size is smaller when compared with silicides originating from pure Ni. When heated to higher temperatures, these samples form an epitaxial layer, identified as NiSi2. Without the addition of Al, NiSi2 is known to grow in two epitaxial orientations. When Al is added, the orientation defined by NiSi2(12̄2)//Si(001) and NiSi2(11̄0)//Si(101) is hindered, possibly causing a smoother interface with the Si substrate. Adding more than 30 at.% of Al results in a highly different phase formation where no NiSi formation could be observed. A second series of samples investigated the addition of Al for Ni films thinner than 10 nm. Ultrathin Ni layers are known to react directly into an epitaxial NiSi2 phase without first forming NiSi. When alloyed with Al, the critical thickness for this phenomenon to occur is elevated from 4-5 nm to 8 nm, indicating that the addition of Al is beneficial for the growth of epitaxial NiSi2.

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Chicago
Geenen, Filip, Koen Van Stiphout, Jean Jordan-Sweet, André Vantomme, Christian Lavoie, and Christophe Detavernier. 2015. “The Influence of Al Alloying on Silicide Formation, Morphology and Texture Between a Thin (<20 Nm) Ni Film and Si(001).” In E-MRS Spring Meeting, Abstracts. European Materials Research Society (E-MRS).
APA
Geenen, F., Van Stiphout, K., Jordan-Sweet, J., Vantomme, A., Lavoie, C., & Detavernier, C. (2015). The influence of Al alloying on silicide formation, morphology and texture between a thin (<20 nm) Ni film and Si(001). E-MRS Spring meeting, Abstracts. Presented at the E-MRS 2015 Spring meeting, European Materials Research Society (E-MRS).
Vancouver
1.
Geenen F, Van Stiphout K, Jordan-Sweet J, Vantomme A, Lavoie C, Detavernier C. The influence of Al alloying on silicide formation, morphology and texture between a thin (<20 nm) Ni film and Si(001). E-MRS Spring meeting, Abstracts. European Materials Research Society (E-MRS); 2015.
MLA
Geenen, Filip, Koen Van Stiphout, Jean Jordan-Sweet, et al. “The Influence of Al Alloying on Silicide Formation, Morphology and Texture Between a Thin (<20 Nm) Ni Film and Si(001).” E-MRS Spring Meeting, Abstracts. European Materials Research Society (E-MRS), 2015. Print.
@inproceedings{7063969,
  abstract     = {The influence of Al on the phase formation between Ni and Si(001) was investigated by altering the Al concentration and the Ni thickness. In a first series of samples, 20 nm Ni on a Si (001) substrate was alloyed between 0 and 50 at. \% Al. The phase formation was examined during heating by sheet resistance and XRD. Small additions of Al (0- 28\%) in the Ni layer result in a mono-silicide layer. Polefigure measurements indicate that the axiotaxial texture of NiSi is less prominent and that the grain size is smaller when compared with silicides originating from pure Ni. When heated to higher temperatures, these samples form an epitaxial layer, identified as NiSi2. Without the addition of Al, NiSi2 is known to grow in two epitaxial orientations. When Al is added, the orientation defined by NiSi2(12\unmatched{0304}2)//Si(001) and NiSi2(11\unmatched{0304}0)//Si(101) is hindered, possibly causing a smoother interface with the Si substrate. Adding more than 30 at.\% of Al results in a highly different phase formation where no NiSi formation could be observed. A second series of samples investigated the addition of Al for Ni films thinner than 10 nm. Ultrathin Ni layers are known to react directly into an epitaxial NiSi2 phase without first forming NiSi.  When alloyed with Al, the critical thickness for this phenomenon to occur is elevated from 4-5 nm to 8 nm, indicating that the addition of Al is beneficial for the growth of epitaxial NiSi2.},
  author       = {Geenen, Filip and Van Stiphout, Koen and Jordan-Sweet, Jean and Vantomme, Andr{\'e} and Lavoie, Christian and Detavernier, Christophe},
  booktitle    = {E-MRS Spring meeting, Abstracts},
  language     = {eng},
  location     = {Lille, France},
  publisher    = {European Materials Research Society (E-MRS)},
  title        = {The influence of Al alloying on silicide formation, morphology and texture between a thin ({\textlangle}20 nm) Ni film and Si(001)},
  year         = {2015},
}