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Deep levels in W-doped Czochralski silicon

Eddy Simoen (UGent) , Koichiro Saga, Henk Vrielinck (UGent) and Johan Lauwaert (UGent)
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TRANSIENT SPECTROSCOPY, ELECTRIC-FIELD, DEFECT STATES, TUNGSTEN, MOLYBDENUM, JUNCTIONS, DISLOCATIONS, IMPURITIES, PLATINUM, TRAPS

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Citation

Please use this url to cite or link to this publication:

Chicago
Simoen, Eddy, Koichiro Saga, Henk Vrielinck, and Johan Lauwaert. 2016. “Deep Levels in W-doped Czochralski Silicon.” Ecs Journal of Solid State Science and Technology 5 (4): P3001–P3007.
APA
Simoen, Eddy, Saga, K., Vrielinck, H., & Lauwaert, J. (2016). Deep levels in W-doped Czochralski silicon. ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 5(4), P3001–P3007.
Vancouver
1.
Simoen E, Saga K, Vrielinck H, Lauwaert J. Deep levels in W-doped Czochralski silicon. ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY. 2016;5(4):P3001–P3007.
MLA
Simoen, Eddy et al. “Deep Levels in W-doped Czochralski Silicon.” ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY 5.4 (2016): P3001–P3007. Print.
@article{6964896,
  author       = {Simoen, Eddy and Saga, Koichiro and Vrielinck, Henk and Lauwaert, Johan},
  issn         = {2162-8769},
  journal      = {ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY},
  keywords     = {TRANSIENT SPECTROSCOPY,ELECTRIC-FIELD,DEFECT STATES,TUNGSTEN,MOLYBDENUM,JUNCTIONS,DISLOCATIONS,IMPURITIES,PLATINUM,TRAPS},
  language     = {eng},
  number       = {4},
  pages        = {P3001--P3007},
  title        = {Deep levels in W-doped Czochralski silicon},
  url          = {http://dx.doi.org/10.1149/2.0011604jss},
  volume       = {5},
  year         = {2016},
}

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