Please use this url to cite or link to this publication: http://hdl.handle.net/1854/LU-6942690

MLA

Simoen, Eddy, Valentina Ferro, and Barry O’Sullivan. “Impact of the Gate Material on the Deep Levels in a-Si:H/c-Si Metal-Insulator-Semiconductor Capacitors.” Solid State Phenomena. Ed. P Pichler. Vol. 242. Stafa-Zürich, Switzerland: Trans Tech, 2016. 61–66. Print.

APA

Simoen, Eddy, Ferro, V., & O’Sullivan, B. (2016). Impact of the gate material on the deep levels in a-Si:H/c-Si Metal-Insulator-Semiconductor capacitors. In P. Pichler (Ed.), Solid State Phenomena (Vol. 242, pp. 61–66). Presented at the Gettering and Defect Engineering in Semiconductor Technology 2015 (GADEST 2015): 30 Years of GADEST, Stafa-Zürich, Switzerland: Trans Tech.

Chicago author-date

Simoen, Eddy, Valentina Ferro, and Barry O’Sullivan. 2016. “Impact of the Gate Material on the Deep Levels in a-Si:H/c-Si Metal-Insulator-Semiconductor Capacitors.” In Solid State Phenomena, ed. P Pichler, 242:61–66. Stafa-Zürich, Switzerland: Trans Tech.

Chicago author-date (all authors)

Simoen, Eddy, Valentina Ferro, and Barry O’Sullivan. 2016. “Impact of the Gate Material on the Deep Levels in a-Si:H/c-Si Metal-Insulator-Semiconductor Capacitors.” In Solid State Phenomena, ed. P Pichler, 242:61–66. Stafa-Zürich, Switzerland: Trans Tech.

Vancouver

1.

Simoen E, Ferro V, O’Sullivan B. Impact of the gate material on the deep levels in a-Si:H/c-Si Metal-Insulator-Semiconductor capacitors. In: Pichler P, editor. Solid State Phenomena. Stafa-Zürich, Switzerland: Trans Tech; 2016. p. 61–6.

IEEE

[1]

E. Simoen, V. Ferro, and B. O’Sullivan, “Impact of the gate material on the deep levels in a-Si:H/c-Si Metal-Insulator-Semiconductor capacitors,” in Solid State Phenomena, Bad Staffelstein, Germany, 2016, vol. 242, pp. 61–66.