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Impact of the gate material on the deep levels in a-Si:H/c-Si Metal-Insulator-Semiconductor capacitors

(2016) Solid State Phenomena. 242. p.61-66
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Citation

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MLA
Simoen, Eddy, Valentina Ferro, and Barry O’Sullivan. “Impact of the Gate Material on the Deep Levels in a-Si:H/c-Si Metal-Insulator-Semiconductor Capacitors.” Solid State Phenomena. Ed. P Pichler. Vol. 242. Stafa-Zürich, Switzerland: Trans Tech, 2016. 61–66. Print.
APA
Simoen, Eddy, Ferro, V., & O’Sullivan, B. (2016). Impact of the gate material on the deep levels in a-Si:H/c-Si Metal-Insulator-Semiconductor capacitors. In P. Pichler (Ed.), Solid State Phenomena (Vol. 242, pp. 61–66). Presented at the Gettering and Defect Engineering in Semiconductor Technology 2015 (GADEST 2015): 30 Years of GADEST, Stafa-Zürich, Switzerland: Trans Tech.
Chicago author-date
Simoen, Eddy, Valentina Ferro, and Barry O’Sullivan. 2016. “Impact of the Gate Material on the Deep Levels in a-Si:H/c-Si Metal-Insulator-Semiconductor Capacitors.” In Solid State Phenomena, ed. P Pichler, 242:61–66. Stafa-Zürich, Switzerland: Trans Tech.
Chicago author-date (all authors)
Simoen, Eddy, Valentina Ferro, and Barry O’Sullivan. 2016. “Impact of the Gate Material on the Deep Levels in a-Si:H/c-Si Metal-Insulator-Semiconductor Capacitors.” In Solid State Phenomena, ed. P Pichler, 242:61–66. Stafa-Zürich, Switzerland: Trans Tech.
Vancouver
1.
Simoen E, Ferro V, O’Sullivan B. Impact of the gate material on the deep levels in a-Si:H/c-Si Metal-Insulator-Semiconductor capacitors. In: Pichler P, editor. Solid State Phenomena. Stafa-Zürich, Switzerland: Trans Tech; 2016. p. 61–6.
IEEE
[1]
E. Simoen, V. Ferro, and B. O’Sullivan, “Impact of the gate material on the deep levels in a-Si:H/c-Si Metal-Insulator-Semiconductor capacitors,” in Solid State Phenomena, Bad Staffelstein, Germany, 2016, vol. 242, pp. 61–66.
@inproceedings{6942690,
  author       = {Simoen, Eddy and Ferro, Valentina and O'Sullivan, Barry},
  booktitle    = {Solid State Phenomena},
  editor       = {Pichler, P},
  isbn         = {9783038356080},
  issn         = {1012-0394},
  language     = {eng},
  location     = {Bad Staffelstein, Germany},
  pages        = {61--66},
  publisher    = {Trans Tech},
  title        = {Impact of the gate material on the deep levels in a-Si:H/c-Si Metal-Insulator-Semiconductor capacitors},
  url          = {http://dx.doi.org/10.4028/www.scientific.net/SSP.242.61},
  volume       = {242},
  year         = {2016},
}

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