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Lanthanide-assisted deposition of strongly electro-optic PZT thin films on silicon: toward integrated active nanophotonic devices

(2015) ACS APPLIED MATERIALS & INTERFACES. 7(24). p.13350-13359
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Abstract
The electro-optical properties of lead zirconate titanate (PZT) thin films depend strongly on the quality and crystallographic orientation of the thin films. We demonstrate a novel method to grow highly textured PZT thin films on silicon using the chemical solution deposition (CSD) process. We report the use of ultrathin (5–15 nm) lanthanide (La, Pr, Nd, Sm) based intermediate layers for obtaining preferentially (100) oriented PZT thin films. X-ray diffraction measurements indicate preferentially oriented intermediate Ln2O2CO3 layers providing an excellent lattice match with the PZT thin films grown on top. The XRD and scanning electron microscopy measurements reveal that the annealed layers are dense, uniform, crack-free and highly oriented (>99.8%) without apparent defects or secondary phases. The EDX and HRTEM characterization confirm that the template layers act as an efficient diffusion barrier and form a sharp interface between the substrate and the PZT. The electrical measurements indicate a dielectric constant of ∼650, low dielectric loss of ∼0.02, coercive field of 70 kV/cm, remnant polarization of 25 μC/cm2, and large breakdown electric field of 1000 kV/cm. Finally, the effective electro-optic coefficients of the films are estimated with a spectroscopic ellipsometer measurement, considering the electric field induced variations in the phase reflectance ratio. The electro-optic measurements reveal excellent linear effective pockels coefficients of 110 to 240 pm/V, which makes the CSD deposited PZT thin film an ideal candidate for Si-based active integrated nanophotonic devices.
Keywords
ellipsometry, electro-optic effect, pockels coefficient, chemical solution deposition, modulator, dielectric, BUFFER LAYER, lead zirconate titanate, ZIRCONATE-TITANATE FILMS, LITHIUM-NIOBATE, PIEZOELECTRIC PROPERTIES, ELECTRICAL-PROPERTIES, SI, MICROSTRUCTURE, COEFFICIENT, MODULATOR, INTERFEROMETER

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MLA
Puthenparampil George, John, et al. “Lanthanide-Assisted Deposition of Strongly Electro-Optic PZT Thin Films on Silicon: Toward Integrated Active Nanophotonic Devices.” ACS APPLIED MATERIALS & INTERFACES, vol. 7, no. 24, 2015, pp. 13350–59, doi:10.1021/acsami.5b01781.
APA
Puthenparampil George, J., Smet, P., Botterman, J., Bliznuk, V., Woestenborghs, W., Van Thourhout, D., … Beeckman, J. (2015). Lanthanide-assisted deposition of strongly electro-optic PZT thin films on silicon: toward integrated active nanophotonic devices. ACS APPLIED MATERIALS & INTERFACES, 7(24), 13350–13359. https://doi.org/10.1021/acsami.5b01781
Chicago author-date
Puthenparampil George, John, Philippe Smet, Jonas Botterman, Vitaliy Bliznuk, Wouter Woestenborghs, Dries Van Thourhout, Kristiaan Neyts, and Jeroen Beeckman. 2015. “Lanthanide-Assisted Deposition of Strongly Electro-Optic PZT Thin Films on Silicon: Toward Integrated Active Nanophotonic Devices.” ACS APPLIED MATERIALS & INTERFACES 7 (24): 13350–59. https://doi.org/10.1021/acsami.5b01781.
Chicago author-date (all authors)
Puthenparampil George, John, Philippe Smet, Jonas Botterman, Vitaliy Bliznuk, Wouter Woestenborghs, Dries Van Thourhout, Kristiaan Neyts, and Jeroen Beeckman. 2015. “Lanthanide-Assisted Deposition of Strongly Electro-Optic PZT Thin Films on Silicon: Toward Integrated Active Nanophotonic Devices.” ACS APPLIED MATERIALS & INTERFACES 7 (24): 13350–13359. doi:10.1021/acsami.5b01781.
Vancouver
1.
Puthenparampil George J, Smet P, Botterman J, Bliznuk V, Woestenborghs W, Van Thourhout D, et al. Lanthanide-assisted deposition of strongly electro-optic PZT thin films on silicon: toward integrated active nanophotonic devices. ACS APPLIED MATERIALS & INTERFACES. 2015;7(24):13350–9.
IEEE
[1]
J. Puthenparampil George et al., “Lanthanide-assisted deposition of strongly electro-optic PZT thin films on silicon: toward integrated active nanophotonic devices,” ACS APPLIED MATERIALS & INTERFACES, vol. 7, no. 24, pp. 13350–13359, 2015.
@article{6915560,
  abstract     = {{The electro-optical properties of lead zirconate titanate (PZT) thin films depend strongly on the quality and crystallographic orientation of the thin films. We demonstrate a novel method to grow highly textured PZT thin films on silicon using the chemical solution deposition (CSD) process. We report the use of ultrathin (5–15 nm) lanthanide (La, Pr, Nd, Sm) based intermediate layers for obtaining preferentially (100) oriented PZT thin films. X-ray diffraction measurements indicate preferentially oriented intermediate Ln2O2CO3 layers providing an excellent lattice match with the PZT thin films grown on top. The XRD and scanning electron microscopy measurements reveal that the annealed layers are dense, uniform, crack-free and highly oriented (>99.8%) without apparent defects or secondary phases. The EDX and HRTEM characterization confirm that the template layers act as an efficient diffusion barrier and form a sharp interface between the substrate and the PZT. The electrical measurements indicate a dielectric constant of ∼650, low dielectric loss of ∼0.02, coercive field of 70 kV/cm, remnant polarization of 25 μC/cm2, and large breakdown electric field of 1000 kV/cm. Finally, the effective electro-optic coefficients of the films are estimated with a spectroscopic ellipsometer measurement, considering the electric field induced variations in the phase reflectance ratio. The electro-optic measurements reveal excellent linear effective pockels coefficients of 110 to 240 pm/V, which makes the CSD deposited PZT thin film an ideal candidate for Si-based active integrated nanophotonic devices.}},
  author       = {{Puthenparampil George, John and Smet, Philippe and Botterman, Jonas and Bliznuk, Vitaliy and Woestenborghs, Wouter and Van Thourhout, Dries and Neyts, Kristiaan and Beeckman, Jeroen}},
  issn         = {{1944-8244}},
  journal      = {{ACS APPLIED MATERIALS & INTERFACES}},
  keywords     = {{ellipsometry,electro-optic effect,pockels coefficient,chemical solution deposition,modulator,dielectric,BUFFER LAYER,lead zirconate titanate,ZIRCONATE-TITANATE FILMS,LITHIUM-NIOBATE,PIEZOELECTRIC PROPERTIES,ELECTRICAL-PROPERTIES,SI,MICROSTRUCTURE,COEFFICIENT,MODULATOR,INTERFEROMETER}},
  language     = {{eng}},
  number       = {{24}},
  pages        = {{13350--13359}},
  title        = {{Lanthanide-assisted deposition of strongly electro-optic PZT thin films on silicon: toward integrated active nanophotonic devices}},
  url          = {{http://dx.doi.org/10.1021/acsami.5b01781}},
  volume       = {{7}},
  year         = {{2015}},
}

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