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Theoretical study of the impact of stress and interstitial oxygen on the behavior of intrinsic point defects in growing CZ-Si crystals

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Chicago
Sueoka, K, K Nakamura, and Jan Vanhellemont. 2015. “Theoretical Study of the Impact of Stress and Interstitial Oxygen on the Behavior of Intrinsic Point Defects in Growing CZ-Si Crystals.” In GADEST, Abstracts.
APA
Sueoka, K, Nakamura, K., & Vanhellemont, J. (2015). Theoretical study of the impact of stress and interstitial oxygen on the behavior of intrinsic point defects in growing CZ-Si crystals. GADEST, Abstracts. Presented at the Gettering and Defect Engineering in Semiconductor Technology 2015 (GADEST 2015): 30 Years of GADEST.
Vancouver
1.
Sueoka K, Nakamura K, Vanhellemont J. Theoretical study of the impact of stress and interstitial oxygen on the behavior of intrinsic point defects in growing CZ-Si crystals. GADEST, Abstracts. 2015.
MLA
Sueoka, K, K Nakamura, and Jan Vanhellemont. “Theoretical Study of the Impact of Stress and Interstitial Oxygen on the Behavior of Intrinsic Point Defects in Growing CZ-Si Crystals.” GADEST, Abstracts. 2015. Print.
@inproceedings{6899479,
  author       = {Sueoka, K and Nakamura, K and Vanhellemont, Jan},
  booktitle    = {GADEST, Abstracts},
  language     = {eng},
  location     = {Bad Staffelstein, Germany},
  title        = {Theoretical study of the impact of stress and interstitial oxygen on the behavior of intrinsic point defects in growing CZ-Si crystals},
  year         = {2015},
}