Please use this url to cite or link to this publication: http://hdl.handle.net/1854/LU-6895778

MLA

Lauer, K, C Möller, D Schulze, et al. “Discussion of A_Si - Si_i -defect Model in Frame of Experimental Results on P Line in Indium Doped Silicon.” Solid State Phenomena. Ed. P Pichler. Vol. 242. Stafa-Zürich, Switzerland: Trans Tech, 2016. 90–95. Print.

APA

Lauer, K., Möller, C., Schulze, D., Ahrens, C., & Vanhellemont, J. (2016). Discussion of A_Si - Si_i -defect model in frame of experimental results on P line in indium doped silicon. In P. Pichler (Ed.), Solid State Phenomena (Vol. 242, pp. 90–95). Presented at the Gettering and Defect Engineering in Semiconductor Technology 2015 (GADEST 2015), Stafa-Zürich, Switzerland: Trans Tech.

Chicago author-date

Lauer, K, C Möller, D Schulze, C Ahrens, and Jan Vanhellemont. 2016. “Discussion of A_Si - Si_i -defect Model in Frame of Experimental Results on P Line in Indium Doped Silicon.” In Solid State Phenomena, ed. P Pichler, 242:90–95. Stafa-Zürich, Switzerland: Trans Tech.

Chicago author-date (all authors)

Lauer, K, C Möller, D Schulze, C Ahrens, and Jan Vanhellemont. 2016. “Discussion of A_Si - Si_i -defect Model in Frame of Experimental Results on P Line in Indium Doped Silicon.” In Solid State Phenomena, ed. P Pichler, 242:90–95. Stafa-Zürich, Switzerland: Trans Tech.

Vancouver

1.

Lauer K, Möller C, Schulze D, Ahrens C, Vanhellemont J. Discussion of A_Si - Si_i -defect model in frame of experimental results on P line in indium doped silicon. In: Pichler P, editor. Solid State Phenomena. Stafa-Zürich, Switzerland: Trans Tech; 2016. p. 90–5.

IEEE

[1]

K. Lauer, C. Möller, D. Schulze, C. Ahrens, and J. Vanhellemont, “Discussion of A_Si - Si_i -defect model in frame of experimental results on P line in indium doped silicon,” in Solid State Phenomena, Bad Staffelstein, Germany, 2016, vol. 242, pp. 90–95.