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Discussion of A_Si - Si_i -defect model in frame of experimental results on P line in indium doped silicon

K Lauer, C Möller, D Schulze, C Ahrens and Jan Vanhellemont (UGent)
(2016) Solid State Phenomena. 242. p.90-95
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MLA
Lauer, K., et al. “Discussion of A_Si - Si_i -Defect Model in Frame of Experimental Results on P Line in Indium Doped Silicon.” Solid State Phenomena, edited by P Pichler, vol. 242, Trans Tech, 2016, pp. 90–95, doi:10.4028/www.scientific.net/SSP.242.90.
APA
Lauer, K., Möller, C., Schulze, D., Ahrens, C., & Vanhellemont, J. (2016). Discussion of A_Si - Si_i -defect model in frame of experimental results on P line in indium doped silicon. In P. Pichler (Ed.), Solid State Phenomena (Vol. 242, pp. 90–95). Stafa-Zürich, Switzerland: Trans Tech. https://doi.org/10.4028/www.scientific.net/SSP.242.90
Chicago author-date
Lauer, K, C Möller, D Schulze, C Ahrens, and Jan Vanhellemont. 2016. “Discussion of A_Si - Si_i -Defect Model in Frame of Experimental Results on P Line in Indium Doped Silicon.” In Solid State Phenomena, edited by P Pichler, 242:90–95. Stafa-Zürich, Switzerland: Trans Tech. https://doi.org/10.4028/www.scientific.net/SSP.242.90.
Chicago author-date (all authors)
Lauer, K, C Möller, D Schulze, C Ahrens, and Jan Vanhellemont. 2016. “Discussion of A_Si - Si_i -Defect Model in Frame of Experimental Results on P Line in Indium Doped Silicon.” In Solid State Phenomena, ed by. P Pichler, 242:90–95. Stafa-Zürich, Switzerland: Trans Tech. doi:10.4028/www.scientific.net/SSP.242.90.
Vancouver
1.
Lauer K, Möller C, Schulze D, Ahrens C, Vanhellemont J. Discussion of A_Si - Si_i -defect model in frame of experimental results on P line in indium doped silicon. In: Pichler P, editor. Solid State Phenomena. Stafa-Zürich, Switzerland: Trans Tech; 2016. p. 90–5.
IEEE
[1]
K. Lauer, C. Möller, D. Schulze, C. Ahrens, and J. Vanhellemont, “Discussion of A_Si - Si_i -defect model in frame of experimental results on P line in indium doped silicon,” in Solid State Phenomena, Bad Staffelstein, Germany, 2016, vol. 242, pp. 90–95.
@inproceedings{6895778,
  author       = {{Lauer, K and Möller, C and Schulze, D and Ahrens, C and Vanhellemont, Jan}},
  booktitle    = {{Solid State Phenomena}},
  editor       = {{Pichler, P}},
  isbn         = {{9783038593980}},
  issn         = {{1012-0394}},
  language     = {{eng}},
  location     = {{Bad Staffelstein, Germany}},
  pages        = {{90--95}},
  publisher    = {{Trans Tech}},
  title        = {{Discussion of A_Si - Si_i -defect model in frame of experimental results on P line in indium doped silicon}},
  url          = {{http://dx.doi.org/10.4028/www.scientific.net/SSP.242.90}},
  volume       = {{242}},
  year         = {{2016}},
}
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