
Discussion of A_Si - Si_i -defect model in frame of experimental results on P line in indium doped silicon
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- K Lauer, C Möller, D Schulze, C Ahrens and Jan Vanhellemont (UGent)
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Please use this url to cite or link to this publication: http://hdl.handle.net/1854/LU-6895778
- MLA
- Lauer, K., et al. “Discussion of A_Si - Si_i -Defect Model in Frame of Experimental Results on P Line in Indium Doped Silicon.” Solid State Phenomena, edited by P Pichler, vol. 242, Trans Tech, 2016, pp. 90–95, doi:10.4028/www.scientific.net/SSP.242.90.
- APA
- Lauer, K., Möller, C., Schulze, D., Ahrens, C., & Vanhellemont, J. (2016). Discussion of A_Si - Si_i -defect model in frame of experimental results on P line in indium doped silicon. In P. Pichler (Ed.), Solid State Phenomena (Vol. 242, pp. 90–95). Stafa-Zürich, Switzerland: Trans Tech. https://doi.org/10.4028/www.scientific.net/SSP.242.90
- Chicago author-date
- Lauer, K, C Möller, D Schulze, C Ahrens, and Jan Vanhellemont. 2016. “Discussion of A_Si - Si_i -Defect Model in Frame of Experimental Results on P Line in Indium Doped Silicon.” In Solid State Phenomena, edited by P Pichler, 242:90–95. Stafa-Zürich, Switzerland: Trans Tech. https://doi.org/10.4028/www.scientific.net/SSP.242.90.
- Chicago author-date (all authors)
- Lauer, K, C Möller, D Schulze, C Ahrens, and Jan Vanhellemont. 2016. “Discussion of A_Si - Si_i -Defect Model in Frame of Experimental Results on P Line in Indium Doped Silicon.” In Solid State Phenomena, ed by. P Pichler, 242:90–95. Stafa-Zürich, Switzerland: Trans Tech. doi:10.4028/www.scientific.net/SSP.242.90.
- Vancouver
- 1.Lauer K, Möller C, Schulze D, Ahrens C, Vanhellemont J. Discussion of A_Si - Si_i -defect model in frame of experimental results on P line in indium doped silicon. In: Pichler P, editor. Solid State Phenomena. Stafa-Zürich, Switzerland: Trans Tech; 2016. p. 90–5.
- IEEE
- [1]K. Lauer, C. Möller, D. Schulze, C. Ahrens, and J. Vanhellemont, “Discussion of A_Si - Si_i -defect model in frame of experimental results on P line in indium doped silicon,” in Solid State Phenomena, Bad Staffelstein, Germany, 2016, vol. 242, pp. 90–95.
@inproceedings{6895778, author = {{Lauer, K and Möller, C and Schulze, D and Ahrens, C and Vanhellemont, Jan}}, booktitle = {{Solid State Phenomena}}, editor = {{Pichler, P}}, isbn = {{9783038593980}}, issn = {{1012-0394}}, language = {{eng}}, location = {{Bad Staffelstein, Germany}}, pages = {{90--95}}, publisher = {{Trans Tech}}, title = {{Discussion of A_Si - Si_i -defect model in frame of experimental results on P line in indium doped silicon}}, url = {{http://dx.doi.org/10.4028/www.scientific.net/SSP.242.90}}, volume = {{242}}, year = {{2016}}, }
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