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Discussion of A_Si - Si_i -defect model in frame of experimental results on P line in indium doped silicon

(2016) Solid State Phenomena. 242. p.90-95
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MLA
Lauer, K, C Möller, D Schulze, et al. “Discussion of A_Si - Si_i -defect Model in Frame of Experimental Results on P Line in Indium Doped Silicon.” Solid State Phenomena. Ed. P Pichler. Vol. 242. Stafa-Zürich, Switzerland: Trans Tech, 2016. 90–95. Print.
APA
Lauer, K., Möller, C., Schulze, D., Ahrens, C., & Vanhellemont, J. (2016). Discussion of A_Si - Si_i -defect model in frame of experimental results on P line in indium doped silicon. In P. Pichler (Ed.), Solid State Phenomena (Vol. 242, pp. 90–95). Presented at the Gettering and Defect Engineering in Semiconductor Technology 2015 (GADEST 2015), Stafa-Zürich, Switzerland: Trans Tech.
Chicago author-date
Lauer, K, C Möller, D Schulze, C Ahrens, and Jan Vanhellemont. 2016. “Discussion of A_Si - Si_i -defect Model in Frame of Experimental Results on P Line in Indium Doped Silicon.” In Solid State Phenomena, ed. P Pichler, 242:90–95. Stafa-Zürich, Switzerland: Trans Tech.
Chicago author-date (all authors)
Lauer, K, C Möller, D Schulze, C Ahrens, and Jan Vanhellemont. 2016. “Discussion of A_Si - Si_i -defect Model in Frame of Experimental Results on P Line in Indium Doped Silicon.” In Solid State Phenomena, ed. P Pichler, 242:90–95. Stafa-Zürich, Switzerland: Trans Tech.
Vancouver
1.
Lauer K, Möller C, Schulze D, Ahrens C, Vanhellemont J. Discussion of A_Si - Si_i -defect model in frame of experimental results on P line in indium doped silicon. In: Pichler P, editor. Solid State Phenomena. Stafa-Zürich, Switzerland: Trans Tech; 2016. p. 90–5.
IEEE
[1]
K. Lauer, C. Möller, D. Schulze, C. Ahrens, and J. Vanhellemont, “Discussion of A_Si - Si_i -defect model in frame of experimental results on P line in indium doped silicon,” in Solid State Phenomena, Bad Staffelstein, Germany, 2016, vol. 242, pp. 90–95.
@inproceedings{6895778,
  author       = {Lauer, K and Möller, C and Schulze, D and Ahrens, C and Vanhellemont, Jan},
  booktitle    = {Solid State Phenomena},
  editor       = {Pichler, P},
  isbn         = {9783038593980},
  issn         = {1012-0394},
  language     = {eng},
  location     = {Bad Staffelstein, Germany},
  pages        = {90--95},
  publisher    = {Trans Tech},
  title        = {Discussion of A_Si - Si_i -defect model in frame of experimental results on P line in indium doped silicon},
  url          = {http://dx.doi.org/10.4028/www.scientific.net/SSP.242.90},
  volume       = {242},
  year         = {2016},
}

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