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KCN chemical etch for interface engineering in Cu2ZnSnSe4 solar cells

Marie Buffiere, Guy Brammertz, Sylvester Sahayaraj, Maria Batuk, Samira Khelifi UGent, Denis Mangin, Abdelaziz El Mel, Ludovic Arzel, Joke Hadermann, Marc Meuris, et al. (2015) ACS Applied Materials & Interfaces. 7(27). p.14690-14698
abstract
The removal of secondary phases from the surface of the kesterite crystals is one of the major challenges to improve the performances of Cu2ZnSn(S,Se)(4) (CZTSSe) thin film solar cells. In this Contribution, the KCN/KOH Chemical etching approach, originally developed for the removal of CuxSe phases in Cu(In,Ga)(S,Se)(2) thin films) is applied to CZTSe absorbers exhibiting various chemical compositions. Two distinct electrical behaviors were observed on CZTSe/CdS solar cells after treatment: (i) the improvement of the fill factor (FF) after 30 s of etching for the CZTSe absorbers showing initially a distortion of the electrical characteristic; (ii) the progressive degradation Of the FF after long treatment time for all Cu-poor CZTSe solar cell samples. The first effect can be attributed to the action of KCN on the absorber, that is found to clean the absorber free surface from most of the secondary phases surrounding the kesterite grains (e.g., Se-0, CuxSe, SnSex, SnO2, Cu2SnSe3 phases, excepting the ZnSe-based phases). The second observation was identified as a consequence of the preferential etching of Se, Sn, and Zn from the CZTSe surface by the KOH solution, combined with the modification of the alkali content of the absorber. The formation of a Cu-rich shell at the absorber/buffer layer interface, leading to the increase of the recombination rate at the interface, and the increase in the doping of the absorber layer after etching are found to be at the origin of the deterioration of the FF of the solar cells.
Please use this url to cite or link to this publication:
author
organization
year
type
journalArticle (original)
publication status
published
subject
keyword
selective etching, EFFICIENCY, surface, KCN, CZTSe, kesterite, FILMS, DEVICES, photovoltaic
journal title
ACS Applied Materials & Interfaces
volume
7
issue
27
pages
14690 - 14698
publisher
American Chemical Society
Web of Science type
Article
Web of Science id
000358395200019
JCR category
MATERIALS SCIENCE, MULTIDISCIPLINARY
JCR impact factor
7.145 (2015)
JCR rank
25/271 (2015)
JCR quartile
1 (2015)
ISSN
1944-8244
DOI
10.1021/acsami.5b02122
language
English
UGent publication?
yes
classification
A1
copyright statement
I have transferred the copyright for this publication to the publisher
id
6862314
handle
http://hdl.handle.net/1854/LU-6862314
date created
2015-07-03 12:36:50
date last changed
2016-12-19 15:46:14
@article{6862314,
  abstract     = {The removal of secondary phases from the surface of the kesterite crystals is one of the major challenges to improve the performances of Cu2ZnSn(S,Se)(4) (CZTSSe) thin film solar cells. In this Contribution, the KCN/KOH Chemical etching approach, originally developed for the removal of CuxSe phases in Cu(In,Ga)(S,Se)(2) thin films) is applied to CZTSe absorbers exhibiting various chemical compositions. Two distinct electrical behaviors were observed on CZTSe/CdS solar cells after treatment: (i) the improvement of the fill factor (FF) after 30 s of etching for the CZTSe absorbers showing initially a distortion of the electrical characteristic; (ii) the progressive degradation Of the FF after long treatment time for all Cu-poor CZTSe solar cell samples. The first effect can be attributed to the action of KCN on the absorber, that is found to clean the absorber free surface from most of the secondary phases surrounding the kesterite grains (e.g., Se-0, CuxSe, SnSex, SnO2, Cu2SnSe3 phases, excepting the ZnSe-based phases). The second observation was identified as a consequence of the preferential etching of Se, Sn, and Zn from the CZTSe surface by the KOH solution, combined with the modification of the alkali content of the absorber. The formation of a Cu-rich shell at the absorber/buffer layer interface, leading to the increase of the recombination rate at the interface, and the increase in the doping of the absorber layer after etching are found to be at the origin of the deterioration of the FF of the solar cells.},
  author       = {Buffiere, Marie and Brammertz, Guy and Sahayaraj, Sylvester and Batuk, Maria and Khelifi, Samira and Mangin, Denis and El Mel, Abdelaziz and Arzel, Ludovic and Hadermann, Joke and Meuris, Marc and Poortmans, Jef},
  issn         = {1944-8244},
  journal      = {ACS Applied Materials \& Interfaces},
  keyword      = {selective etching,EFFICIENCY,surface,KCN,CZTSe,kesterite,FILMS,DEVICES,photovoltaic},
  language     = {eng},
  number       = {27},
  pages        = {14690--14698},
  publisher    = {American Chemical Society},
  title        = {KCN chemical etch for interface engineering in Cu2ZnSnSe4 solar cells},
  url          = {http://dx.doi.org/10.1021/acsami.5b02122},
  volume       = {7},
  year         = {2015},
}

Chicago
Buffiere, Marie, Guy Brammertz, Sylvester Sahayaraj, Maria Batuk, Samira Khelifi, Denis Mangin, Abdelaziz El Mel, et al. 2015. “KCN Chemical Etch for Interface Engineering in Cu2ZnSnSe4 Solar Cells.” ACS Applied Materials & Interfaces 7 (27): 14690–14698.
APA
Buffiere, Marie, Brammertz, G., Sahayaraj, S., Batuk, M., Khelifi, S., Mangin, D., El Mel, A., et al. (2015). KCN chemical etch for interface engineering in Cu2ZnSnSe4 solar cells. ACS Applied Materials & Interfaces, 7(27), 14690–14698.
Vancouver
1.
Buffiere M, Brammertz G, Sahayaraj S, Batuk M, Khelifi S, Mangin D, et al. KCN chemical etch for interface engineering in Cu2ZnSnSe4 solar cells. ACS Applied Materials & Interfaces. American Chemical Society; 2015;7(27):14690–8.
MLA
Buffiere, Marie, Guy Brammertz, Sylvester Sahayaraj, et al. “KCN Chemical Etch for Interface Engineering in Cu2ZnSnSe4 Solar Cells.” ACS Applied Materials & Interfaces 7.27 (2015): 14690–14698. Print.