Broadband 10Gb/s graphene electro-absorption modulator on silicon for chip-level optical interconnects
- Author
- Yingtao Hu (UGent) , Pantouvaki M, Brems S, Asselberghs I, Huygebaert C, Geisler M, Alessandri C, Roel Baets (UGent) , Absil P, Dries Van Thourhout (UGent) and Van Campenhout J
- Organization
- Project
- Abstract
- We report the first silicon integrated graphene optical electro-absorption modulator capable of 10Gb/s modulation speed. We demonstrate low insertion loss and low drive voltage combined with broadband and athermal operation in a compact hybrid graphene-Si device, outperforming Si(Ge) optical modulators for future chip-level optical interconnect application.
- Keywords
- NM
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Citation
Please use this url to cite or link to this publication: http://hdl.handle.net/1854/LU-6854423
- MLA
- Hu, Yingtao, et al. “Broadband 10Gb/s Graphene Electro-Absorption Modulator on Silicon for Chip-Level Optical Interconnects.” International Electron Devices Meeting, 2014, p. 5.6.1-5.6.4.
- APA
- Hu, Y., M, P., S, B., I, A., C, H., M, G., … J, V. C. (2014). Broadband 10Gb/s graphene electro-absorption modulator on silicon for chip-level optical interconnects. International Electron Devices Meeting, 5.6.1-5.6.4.
- Chicago author-date
- Hu, Yingtao, Pantouvaki M, Brems S, Asselberghs I, Huygebaert C, Geisler M, Alessandri C, et al. 2014. “Broadband 10Gb/s Graphene Electro-Absorption Modulator on Silicon for Chip-Level Optical Interconnects.” In International Electron Devices Meeting, 5.6.1-5.6.4.
- Chicago author-date (all authors)
- Hu, Yingtao, Pantouvaki M, Brems S, Asselberghs I, Huygebaert C, Geisler M, Alessandri C, Roel Baets, Absil P, Dries Van Thourhout, and Van Campenhout J. 2014. “Broadband 10Gb/s Graphene Electro-Absorption Modulator on Silicon for Chip-Level Optical Interconnects.” In International Electron Devices Meeting, 5.6.1-5.6.4.
- Vancouver
- 1.Hu Y, M P, S B, I A, C H, M G, et al. Broadband 10Gb/s graphene electro-absorption modulator on silicon for chip-level optical interconnects. In: International Electron Devices Meeting. 2014. p. 5.6.1-5.6.4.
- IEEE
- [1]Y. Hu et al., “Broadband 10Gb/s graphene electro-absorption modulator on silicon for chip-level optical interconnects,” in International Electron Devices Meeting, San Francisco, USA, 2014, p. 5.6.1-5.6.4.
@inproceedings{6854423,
abstract = {{We report the first silicon integrated graphene optical electro-absorption modulator capable of 10Gb/s modulation speed. We demonstrate low insertion loss and low drive voltage combined with broadband and athermal operation in a compact hybrid graphene-Si device, outperforming Si(Ge) optical modulators for future chip-level optical interconnect application.}},
author = {{Hu, Yingtao and M, Pantouvaki and S, Brems and I, Asselberghs and C, Huygebaert and M, Geisler and C, Alessandri and Baets, Roel and P, Absil and Van Thourhout, Dries and J, Van Campenhout}},
booktitle = {{International Electron Devices Meeting}},
isbn = {{978-1-4799-8000-0}},
keywords = {{NM}},
language = {{eng}},
location = {{San Francisco, USA}},
pages = {{5.6.1--5.6.4}},
title = {{Broadband 10Gb/s graphene electro-absorption modulator on silicon for chip-level optical interconnects}},
year = {{2014}},
}