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TCAD Strain calibration versus nanobeam diffraction of source/drain stressors for Ge MOSFETs

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Abstract
TCAD finite-element process simulations have been performed on Ge-channel n and pMOSFETs with embedded source/drain stressors or a strained Ge channel on a relaxed SiGe strain relaxed buffer (SRB), respectively, and compared with nanobeam diffraction strain measurements. While there is overall a good agreement between the simulated and experimental strain profiles, some deviations may occur, due to the presence of extended defects in the strain relaxed Ge buffer layers. This highlights the importance of selection of a strain-free reference in the relaxed Ge or SiGe SRB.
Keywords
MOSFET, Ge channel, nanobeam diffraction (NBD), TCAD, SILICON, ENHANCEMENT, GERMANIUM, MOBILITY, CELL

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MLA
Bühler, Rudolf Theoderich et al. “TCAD Strain Calibration Versus Nanobeam Diffraction of Source/drain Stressors for Ge MOSFETs.” IEEE TRANSACTIONS ON ELECTRON DEVICES 62.4 (2015): 1079–1084. Print.
APA
Bühler, R. T., Eneman, G., Favia, P., Witters, L. J., Vincent, B., Hikavyy, A., Loo, R., et al. (2015). TCAD Strain calibration versus nanobeam diffraction of source/drain stressors for Ge MOSFETs. IEEE TRANSACTIONS ON ELECTRON DEVICES, 62(4), 1079–1084.
Chicago author-date
Bühler, Rudolf Theoderich, Geert Eneman, Paola Favia, Liesbeth Johanna Witters, Benjamin Vincent, Andriy Hikavyy, Roger Loo, et al. 2015. “TCAD Strain Calibration Versus Nanobeam Diffraction of Source/drain Stressors for Ge MOSFETs.” Ieee Transactions on Electron Devices 62 (4): 1079–1084.
Chicago author-date (all authors)
Bühler, Rudolf Theoderich, Geert Eneman, Paola Favia, Liesbeth Johanna Witters, Benjamin Vincent, Andriy Hikavyy, Roger Loo, Hugo Bender, Nadine Collaert, Eddy Simoen, João Antonio Martino, and Cor Claeys. 2015. “TCAD Strain Calibration Versus Nanobeam Diffraction of Source/drain Stressors for Ge MOSFETs.” Ieee Transactions on Electron Devices 62 (4): 1079–1084.
Vancouver
1.
Bühler RT, Eneman G, Favia P, Witters LJ, Vincent B, Hikavyy A, et al. TCAD Strain calibration versus nanobeam diffraction of source/drain stressors for Ge MOSFETs. IEEE TRANSACTIONS ON ELECTRON DEVICES. 2015;62(4):1079–84.
IEEE
[1]
R. T. Bühler et al., “TCAD Strain calibration versus nanobeam diffraction of source/drain stressors for Ge MOSFETs,” IEEE TRANSACTIONS ON ELECTRON DEVICES, vol. 62, no. 4, pp. 1079–1084, 2015.
@article{6848804,
  abstract     = {TCAD finite-element process simulations have been performed on Ge-channel n and pMOSFETs with embedded source/drain stressors or a strained Ge channel on a relaxed SiGe strain relaxed buffer (SRB), respectively, and compared with nanobeam diffraction strain measurements. While there is overall a good agreement between the simulated and experimental strain profiles, some deviations may occur, due to the presence of extended defects in the strain relaxed Ge buffer layers. This highlights the importance of selection of a strain-free reference in the relaxed Ge or SiGe SRB.},
  author       = {Bühler, Rudolf Theoderich and Eneman, Geert and Favia, Paola and Witters, Liesbeth Johanna and Vincent, Benjamin and Hikavyy, Andriy and Loo, Roger and Bender, Hugo and Collaert, Nadine and Simoen, Eddy and Martino, João Antonio and Claeys, Cor},
  issn         = {0018-9383},
  journal      = {IEEE TRANSACTIONS ON ELECTRON DEVICES},
  keywords     = {MOSFET,Ge channel,nanobeam diffraction (NBD),TCAD,SILICON,ENHANCEMENT,GERMANIUM,MOBILITY,CELL},
  language     = {eng},
  number       = {4},
  pages        = {1079--1084},
  title        = {TCAD Strain calibration versus nanobeam diffraction of source/drain stressors for Ge MOSFETs},
  url          = {http://dx.doi.org/10.1109/TED.2015.2397441},
  volume       = {62},
  year         = {2015},
}

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