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A statistical model describing temperature dependent gettering of Cu in p-type Si

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Abstract
A model is proposed describing quantitatively the temperature dependent gettering of Cu atoms in p-type Si wafers by taking into account the densities and the binding energies of all types of occupying sites, including the gettering ones. Binding energy in this context is defined as the decrease of the formation energy from the reference energy of the Cu atom when it is located at the T-site through which Cu atoms wander through the silicon lattice. By using a statistical approach, the model allows to predict the thermal equilibrium concentration of Cu atoms in each part of a wafer structure. The calculated results show good agreement with reported experimental observations. This model can also be applied to calculate thermal equilibrium concentrations of any contaminant.
Keywords
DIFFUSION, METAL IMPURITIES, SILICON-WAFERS

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Chicago
Kamiyama, Eiji, Koji Sueoka, and Jan Vanhellemont. 2015. “A Statistical Model Describing Temperature Dependent Gettering of Cu in P-type Si.” Ecs Journal of Solid State Science and Technology 4 (7): P232–P235.
APA
Kamiyama, E., Sueoka, K., & Vanhellemont, J. (2015). A statistical model describing temperature dependent gettering of Cu in p-type Si. ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 4(7), P232–P235.
Vancouver
1.
Kamiyama E, Sueoka K, Vanhellemont J. A statistical model describing temperature dependent gettering of Cu in p-type Si. ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY. 2015;4(7):P232–P235.
MLA
Kamiyama, Eiji, Koji Sueoka, and Jan Vanhellemont. “A Statistical Model Describing Temperature Dependent Gettering of Cu in P-type Si.” ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY 4.7 (2015): P232–P235. Print.
@article{6842567,
  abstract     = {A model is proposed describing quantitatively the temperature dependent gettering of Cu atoms in p-type Si wafers by taking into account the densities and the binding energies of all types of occupying sites, including the gettering ones. Binding energy in this context is defined as the decrease of the formation energy from the reference energy of the Cu atom when it is located at the T-site through which Cu atoms wander through the silicon lattice. By using a statistical approach, the model allows to predict the thermal equilibrium concentration of Cu atoms in each part of a wafer structure. The calculated results show good agreement with reported experimental observations. This model can also be applied to calculate thermal equilibrium concentrations of any contaminant.},
  author       = {Kamiyama, Eiji and Sueoka, Koji and Vanhellemont, Jan},
  issn         = {2162-8769},
  journal      = {ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY},
  keywords     = {DIFFUSION,METAL IMPURITIES,SILICON-WAFERS},
  language     = {eng},
  number       = {7},
  pages        = {P232--P235},
  title        = {A statistical model describing temperature dependent gettering of Cu in p-type Si},
  url          = {http://dx.doi.org/10.1149/2.0131507jss},
  volume       = {4},
  year         = {2015},
}

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