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Deposition of MnO anode and MnO2 cathode thin films by plasma enhanced atomic layer deposition using the Mn(thd)3 precursor

(2015) CHEMISTRY OF MATERIALS. 27(10). p.3628-3635
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Abstract
Atomic layer deposition (ALD) of a wide range of Mn oxides (MnO to MnO2) is demonstrated by combining the Mn(thd)(3) (tris(2,2,6,6-tetramethy1-3,5-heptanedionato)-manganese) precursor with different types of plasma activated reactant gases. Typical ALD behavior is found with hydrogen, ammonia, and water plasma, with a fully precursor controlled temperature window (from 140 to 250 degrees C) and constant growth rate (0.022 +/- 0.001 nm/cyde). A purely ligand-exchange chemistry would predict Mn2O3 films with the transition metal in the +III state. However, it is found that the nature of the processgas or -plasma, more specific its oxidizing/reducing character, largely determines the oxidation state of the grown films. Our approach provides an effective method for the deposition of MnO2(+IV), Mn3O4(+II/+III), and MnO(+II) based on the Mn(thd)(3)(+III) precursor. All as-deposited films are found to be smooth (<1.2 nm rms roughness), crystalline and with <6% impurities. The resulting films are tested as lithium-ion battery electrodes, showing the MnO2 and the MnO films as possible candidate thin-film cathode and anode, respectively.
Keywords
LITHIUM-ION BATTERIES, MANGANESE OXIDE CATALYSTS, RECHARGEABLE BATTERIES, OXYGEN REDUCTION, O SYSTEM, DECOMPOSITION, NITRIC-OXIDE, TEMPERATURE, OXIDATION, DIOXIDE

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Chicago
Mattelaer, Felix, Philippe Vereecken, Jolien Dendooven, and Christophe Detavernier. 2015. “Deposition of MnO Anode and MnO2 Cathode Thin Films by Plasma Enhanced Atomic Layer Deposition Using the Mn(thd)3 Precursor.” Chemistry of Materials 27 (10): 3628–3635.
APA
Mattelaer, F., Vereecken, P., Dendooven, J., & Detavernier, C. (2015). Deposition of MnO anode and MnO2 cathode thin films by plasma enhanced atomic layer deposition using the Mn(thd)3 precursor. CHEMISTRY OF MATERIALS, 27(10), 3628–3635.
Vancouver
1.
Mattelaer F, Vereecken P, Dendooven J, Detavernier C. Deposition of MnO anode and MnO2 cathode thin films by plasma enhanced atomic layer deposition using the Mn(thd)3 precursor. CHEMISTRY OF MATERIALS. 2015;27(10):3628–35.
MLA
Mattelaer, Felix, Philippe Vereecken, Jolien Dendooven, et al. “Deposition of MnO Anode and MnO2 Cathode Thin Films by Plasma Enhanced Atomic Layer Deposition Using the Mn(thd)3 Precursor.” CHEMISTRY OF MATERIALS 27.10 (2015): 3628–3635. Print.
@article{6838645,
  abstract     = {Atomic layer deposition (ALD) of a wide range of Mn oxides (MnO to MnO2) is demonstrated by combining the Mn(thd)(3) (tris(2,2,6,6-tetramethy1-3,5-heptanedionato)-manganese) precursor with different types of plasma activated reactant gases. Typical ALD behavior is found with hydrogen, ammonia, and water plasma, with a fully precursor controlled temperature window (from 140 to 250 degrees C) and constant growth rate (0.022 +/- 0.001 nm/cyde). A purely ligand-exchange chemistry would predict Mn2O3 films with the transition metal in the +III state. However, it is found that the nature of the processgas or -plasma, more specific its oxidizing/reducing character, largely determines the oxidation state of the grown films. Our approach provides an effective method for the deposition of MnO2(+IV), Mn3O4(+II/+III), and MnO(+II) based on the Mn(thd)(3)(+III) precursor. All as-deposited films are found to be smooth ({\textlangle}1.2 nm rms roughness), crystalline and with {\textlangle}6\% impurities. The resulting films are tested as lithium-ion battery electrodes, showing the MnO2 and the MnO films as possible candidate thin-film cathode and anode, respectively.},
  author       = {Mattelaer, Felix and Vereecken, Philippe and Dendooven, Jolien and Detavernier, Christophe},
  issn         = {0897-4756},
  journal      = {CHEMISTRY OF MATERIALS},
  language     = {eng},
  number       = {10},
  pages        = {3628--3635},
  title        = {Deposition of MnO anode and MnO2 cathode thin films by plasma enhanced atomic layer deposition using the Mn(thd)3 precursor},
  url          = {http://dx.doi.org/10.1021/acs.chemmater.5b00255},
  volume       = {27},
  year         = {2015},
}

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