Advanced search
1 file | 1.06 MB Add to list

Analysis of a narrow-base lateral IGBT with double buried layer for junction-isolated smart-power technologies

Author
Organization
Abstract
An n-type lateral insulated gate bipolar transistor (nLIGBT) with a double buried layer structure is studied. This device is integrated in an existing smart-power junction-isolated technology with a 0.35-mu m CMOS core without adding extra mask steps. The double buried layer underneath the active nLIGBT not only renders this a floating device (i.e., it can be used as a high-side switch) but also suppresses the substrate current effectively, and, what is more, it introduces a buried hole diverter. As a consequence, this device has a wide safe operating area and switches off extremely fast with no current tail. The device's static and dynamic behavior is analyzed through 2D numerical simulations. Finally, the device is compared to the rivaling drain extended MOSFET transistor in this technology.
Keywords
junction-isolated technology, insulated gate bipolar transistor (IGBT), power semiconductor devices, switching transient, SAFE OPERATING AREA, SUBSTRATE CURRENTS, SEGMENTED ANODE, LATCH-UP, LIGBT, TRANSISTORS, CIRCUIT, CHANNEL, VOLTAGE, DEVICES

Downloads

  • (...).pdf
    • full text
    • |
    • UGent only
    • |
    • PDF
    • |
    • 1.06 MB

Citation

Please use this url to cite or link to this publication:

MLA
Bakeroot, Benoit et al. “Analysis of a Narrow-base Lateral IGBT with Double Buried Layer for Junction-isolated Smart-power Technologies.” IEEE TRANSACTIONS ON ELECTRON DEVICES 55.1 (2008): 435–445. Print.
APA
Bakeroot, B., Doutreloigne, J., Vanmeerbeek, P., & Moens, P. (2008). Analysis of a narrow-base lateral IGBT with double buried layer for junction-isolated smart-power technologies. IEEE TRANSACTIONS ON ELECTRON DEVICES, 55(1), 435–445.
Chicago author-date
Bakeroot, Benoit, Jan Doutreloigne, Piet Vanmeerbeek, and Peter Moens. 2008. “Analysis of a Narrow-base Lateral IGBT with Double Buried Layer for Junction-isolated Smart-power Technologies.” Ieee Transactions on Electron Devices 55 (1): 435–445.
Chicago author-date (all authors)
Bakeroot, Benoit, Jan Doutreloigne, Piet Vanmeerbeek, and Peter Moens. 2008. “Analysis of a Narrow-base Lateral IGBT with Double Buried Layer for Junction-isolated Smart-power Technologies.” Ieee Transactions on Electron Devices 55 (1): 435–445.
Vancouver
1.
Bakeroot B, Doutreloigne J, Vanmeerbeek P, Moens P. Analysis of a narrow-base lateral IGBT with double buried layer for junction-isolated smart-power technologies. IEEE TRANSACTIONS ON ELECTRON DEVICES. 2008;55(1):435–45.
IEEE
[1]
B. Bakeroot, J. Doutreloigne, P. Vanmeerbeek, and P. Moens, “Analysis of a narrow-base lateral IGBT with double buried layer for junction-isolated smart-power technologies,” IEEE TRANSACTIONS ON ELECTRON DEVICES, vol. 55, no. 1, pp. 435–445, 2008.
@article{676498,
  abstract     = {An n-type lateral insulated gate bipolar transistor (nLIGBT) with a double buried layer structure is studied. This device is integrated in an existing smart-power junction-isolated technology with a 0.35-mu m CMOS core without adding extra mask steps. The double buried layer underneath the active nLIGBT not only renders this a floating device (i.e., it can be used as a high-side switch) but also suppresses the substrate current effectively, and, what is more, it introduces a buried hole diverter. As a consequence, this device has a wide safe operating area and switches off extremely fast with no current tail. The device's static and dynamic behavior is analyzed through 2D numerical simulations. Finally, the device is compared to the rivaling drain extended MOSFET transistor in this technology.},
  author       = {Bakeroot, Benoit and Doutreloigne, Jan and Vanmeerbeek, Piet and Moens, Peter},
  issn         = {0018-9383},
  journal      = {IEEE TRANSACTIONS ON ELECTRON DEVICES},
  keywords     = {junction-isolated technology,insulated gate bipolar transistor (IGBT),power semiconductor devices,switching transient,SAFE OPERATING AREA,SUBSTRATE CURRENTS,SEGMENTED ANODE,LATCH-UP,LIGBT,TRANSISTORS,CIRCUIT,CHANNEL,VOLTAGE,DEVICES},
  language     = {eng},
  number       = {1},
  pages        = {435--445},
  title        = {Analysis of a narrow-base lateral IGBT with double buried layer for junction-isolated smart-power technologies},
  url          = {http://dx.doi.org/10.1109/TED.2007.911087},
  volume       = {55},
  year         = {2008},
}

Altmetric
View in Altmetric
Web of Science
Times cited: