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Dynamics of charge transport in planar devices

(2008) PHYSICAL REVIEW E. 78(1). p.011502-1-011502-15
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Abstract
The Poisson-Nernst-Planck equations describe the dynamics of charge transport in an electric field. Although they are relevant in many applications, a general solution is not known and several aspects are not well understood. In many situations nonlinear effects arise for which no analytical description is available. In this work, we investigate charge transport in a planar device on application of a voltage step. We derive analytical expressions for the dynamical behavior in four extreme cases. In the "geometry limited" regime, applicable at high voltages and low charge contents, we neglect diffusion and the electric field induced by the charges. This leads to a uniform movement of all charges until the bulk is completely depleted. In the "space charge limited" regime, for high voltages and high charge contents, diffusion is still neglected but the electric field is almost completely screened over transient space charge layers. Eventually, however, the bulk becomes depleted of charges and the field becomes homogeneous again. This regime is solved under the assumption of a homogeneous current density, and is characterized by a typical t(-3/4) behavior. In the "diffusion limited" regime, valid for low voltages and low charge contents, diffusion is the dominant transport mechanism and prevents the charges from separating. This results in only very small deviations from a homogeneous charge distribution throughout the device. In the "double layer limited" regime, for low voltages and high charge contents, the combination of dominant diffusion and screening of the electric field results in large variations occurring only in thin double layers near the electrodes. Numerical simulations confirm the validity of the derived analytical expressions for each of the four regimes, and allow us to investigate the parameter values for which they are applicable. We present transient current measurements on a nonpolar liquid with surfactant and compare them with the external current predicted by the theoretical description. The agreement of the analytical expressions with the experiments allows us to obtain values for a number of properties of the charges in the liquid, which are consistent with results in other works. The confirmation by simulations and measurements of the derived theoretical expressions gives confidence about their usefulness to understand various aspects of the Poisson-Nernst-Planck equations and the effects they represent in the dynamics of charge transport.
Keywords
CONDUCTION, INSTABILITY, LIQUIDS, SYSTEMS, MODEL

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MLA
Beunis, Filip, et al. “Dynamics of Charge Transport in Planar Devices.” PHYSICAL REVIEW E, vol. 78, no. 1, 2008, pp. 011502-1-011502–15, doi:10.1103/PhysRevE.78.011502.
APA
Beunis, F., Strubbe, F., Marescaux, M., Beeckman, J., Neyts, K., & Verschueren, A. R. (2008). Dynamics of charge transport in planar devices. PHYSICAL REVIEW E, 78(1), 011502-1-011502–011515. https://doi.org/10.1103/PhysRevE.78.011502
Chicago author-date
Beunis, Filip, Filip Strubbe, Matthias Marescaux, Jeroen Beeckman, Kristiaan Neyts, and Alwin RM Verschueren. 2008. “Dynamics of Charge Transport in Planar Devices.” PHYSICAL REVIEW E 78 (1): 011502-1-011502–15. https://doi.org/10.1103/PhysRevE.78.011502.
Chicago author-date (all authors)
Beunis, Filip, Filip Strubbe, Matthias Marescaux, Jeroen Beeckman, Kristiaan Neyts, and Alwin RM Verschueren. 2008. “Dynamics of Charge Transport in Planar Devices.” PHYSICAL REVIEW E 78 (1): 011502-1-011502–15. doi:10.1103/PhysRevE.78.011502.
Vancouver
1.
Beunis F, Strubbe F, Marescaux M, Beeckman J, Neyts K, Verschueren AR. Dynamics of charge transport in planar devices. PHYSICAL REVIEW E. 2008;78(1):011502-1-011502–15.
IEEE
[1]
F. Beunis, F. Strubbe, M. Marescaux, J. Beeckman, K. Neyts, and A. R. Verschueren, “Dynamics of charge transport in planar devices,” PHYSICAL REVIEW E, vol. 78, no. 1, pp. 011502-1-011502–15, 2008.
@article{676038,
  abstract     = {The Poisson-Nernst-Planck equations describe the dynamics of charge transport in an electric field. Although they are relevant in many applications, a general solution is not known and several aspects are not well understood. In many situations nonlinear effects arise for which no analytical description is available. In this work, we investigate charge transport in a planar device on application of a voltage step. We derive analytical expressions for the dynamical behavior in four extreme cases. In the "geometry limited" regime, applicable at high voltages and low charge contents, we neglect diffusion and the electric field induced by the charges. This leads to a uniform movement of all charges until the bulk is completely depleted. In the "space charge limited" regime, for high voltages and high charge contents, diffusion is still neglected but the electric field is almost completely screened over transient space charge layers. Eventually, however, the bulk becomes depleted of charges and the field becomes homogeneous again. This regime is solved under the assumption of a homogeneous current density, and is characterized by a typical t(-3/4) behavior. In the "diffusion limited" regime, valid for low voltages and low charge contents, diffusion is the dominant transport mechanism and prevents the charges from separating. This results in only very small deviations from a homogeneous charge distribution throughout the device. In the "double layer limited" regime, for low voltages and high charge contents, the combination of dominant diffusion and screening of the electric field results in large variations occurring only in thin double layers near the electrodes. Numerical simulations confirm the validity of the derived analytical expressions for each of the four regimes, and allow us to investigate the parameter values for which they are applicable. We present transient current measurements on a nonpolar liquid with surfactant and compare them with the external current predicted by the theoretical description. The agreement of the analytical expressions with the experiments allows us to obtain values for a number of properties of the charges in the liquid, which are consistent with results in other works. The confirmation by simulations and measurements of the derived theoretical expressions gives confidence about their usefulness to understand various aspects of the Poisson-Nernst-Planck equations and the effects they represent in the dynamics of charge transport.},
  author       = {Beunis, Filip and Strubbe, Filip and Marescaux, Matthias and Beeckman, Jeroen and Neyts, Kristiaan and Verschueren, Alwin RM},
  issn         = {1539-3755},
  journal      = {PHYSICAL REVIEW E},
  keywords     = {CONDUCTION,INSTABILITY,LIQUIDS,SYSTEMS,MODEL},
  language     = {eng},
  number       = {1},
  pages        = {011502-1--011502-15},
  title        = {Dynamics of charge transport in planar devices},
  url          = {http://dx.doi.org/10.1103/PhysRevE.78.011502},
  volume       = {78},
  year         = {2008},
}

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