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Transistor desaturation protection using the driver undervoltage lock out

Alex Van den Bossche UGent, Angel Marinov and Vencislav Valchev (2008) Proceedings CIGE 2008. p.1-4
abstract
In the gate drive circuits, a lot of choice is available in simple drivers in 8 pin devices. If also a desaturation protection is needed, the choice is greatly reduced. However, almost all gate drivers also have an undervoltage lock-out. The principle is to have a weak supply and to use pull the supply down for some time. It is mainly useful in converters which combine slow and fast switching devices and where the desaturation protection is done at the slow switching devices. It is intended to be applied in reliable but cost effective distributed generation converters.
Please use this url to cite or link to this publication:
author
organization
year
type
conference
publication status
published
subject
keyword
power electronics, driver, desaturation protection, IGBT
in
Proceedings CIGE 2008
editor
Chellali Benachaiba
pages
1 - 4
publisher
Université de Béchar Algérie
place of publication
Béchar, Algeria
conference name
Conférence Internationale Genie Electrique
conference location
Béchar, Algeria
conference start
2008-10-25
conference end
2008-10-26
ISBN
N/A
language
English
UGent publication?
yes
classification
C1
copyright statement
I have retained and own the full copyright for this publication
id
667978
handle
http://hdl.handle.net/1854/LU-667978
date created
2009-05-27 10:33:17
date last changed
2017-01-02 09:53:08
@inproceedings{667978,
  abstract     = {In the gate drive circuits, a lot of choice is available in simple drivers in 8 pin devices. If also a desaturation protection is needed, the choice is greatly reduced. However, almost all gate drivers also have an undervoltage lock-out. The principle is to have a weak supply and to use pull the supply down for some time. It is mainly useful in converters which combine slow and fast switching devices and where the desaturation protection is done at the slow 
switching devices. It is intended to be applied in reliable but cost effective distributed generation converters.},
  author       = {Van den Bossche, Alex and Marinov, Angel and Valchev, Vencislav},
  booktitle    = {Proceedings CIGE 2008},
  editor       = {Benachaiba, Chellali},
  isbn         = {N/A},
  keyword      = {power electronics,driver,desaturation protection,IGBT},
  language     = {eng},
  location     = {B{\'e}char, Algeria},
  pages        = {1--4},
  publisher    = {Universit{\'e} de B{\'e}char Alg{\'e}rie},
  title        = {Transistor desaturation protection using the driver undervoltage lock out},
  year         = {2008},
}

Chicago
Van den Bossche, Alex, Angel Marinov, and Vencislav Valchev. 2008. “Transistor Desaturation Protection Using the Driver Undervoltage Lock Out.” In Proceedings CIGE 2008, ed. Chellali Benachaiba, 1–4. Béchar, Algeria: Université de Béchar Algérie.
APA
Van den Bossche, Alex, Marinov, A., & Valchev, V. (2008). Transistor desaturation protection using the driver undervoltage lock out. In C. Benachaiba (Ed.), Proceedings CIGE 2008 (pp. 1–4). Presented at the Conférence Internationale Genie Electrique, Béchar, Algeria: Université de Béchar Algérie.
Vancouver
1.
Van den Bossche A, Marinov A, Valchev V. Transistor desaturation protection using the driver undervoltage lock out. In: Benachaiba C, editor. Proceedings CIGE 2008. Béchar, Algeria: Université de Béchar Algérie; 2008. p. 1–4.
MLA
Van den Bossche, Alex, Angel Marinov, and Vencislav Valchev. “Transistor Desaturation Protection Using the Driver Undervoltage Lock Out.” Proceedings CIGE 2008. Ed. Chellali Benachaiba. Béchar, Algeria: Université de Béchar Algérie, 2008. 1–4. Print.