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Indium phosphide based membrane photodetector for optical interconnects on silicon

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Abstract
We have designed, fabricated and characterized an InP-based membrane photodetector on an SOI wafer containing a Si-wiring photonic circuit. New results on RF characterization up to 20 GHz are presented. The detector fabrication is compatible with wafer scale processing steps, guaranteeing compatibility towards future generation electronic IC processing.

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MLA
Binetti, P. R. A., et al. “Indium Phosphide Based Membrane Photodetector for Optical Interconnects on Silicon.” LEOS 2008. 2008 IEEE LEOS Annual Meeting Conference Proceedings, 2008, pp. 302–03.
APA
Binetti, P. R. A., Leijtens, X. J. M., de Vries, T., Oei, Y. S., Raz, O., Di Cioccio, L., … Smit, M. K. (2008). Indium phosphide based membrane photodetector for optical interconnects on silicon. LEOS 2008. 2008 IEEE LEOS Annual Meeting Conference Proceedings, 302–303.
Chicago author-date
Binetti, P.R.A., X.J.M. Leijtens, T. de Vries, Y.S. Oei, O. Raz, L. Di Cioccio, J.-M. Fedeli, et al. 2008. “Indium Phosphide Based Membrane Photodetector for Optical Interconnects on Silicon.” In LEOS 2008. 2008 IEEE LEOS Annual Meeting Conference Proceedings, 302–3.
Chicago author-date (all authors)
Binetti, P.R.A., X.J.M. Leijtens, T. de Vries, Y.S. Oei, O. Raz, L. Di Cioccio, J.-M. Fedeli, C. Lagahe, R. Orobtchouk, Jan Van Campenhout, Dries Van Thourhout, P.J. van Veldhoven, R. Notzel, and M.K. Smit. 2008. “Indium Phosphide Based Membrane Photodetector for Optical Interconnects on Silicon.” In LEOS 2008. 2008 IEEE LEOS Annual Meeting Conference Proceedings, 302–303.
Vancouver
1.
Binetti PRA, Leijtens XJM, de Vries T, Oei YS, Raz O, Di Cioccio L, et al. Indium phosphide based membrane photodetector for optical interconnects on silicon. In: LEOS 2008 2008 IEEE LEOS Annual Meeting Conference Proceedings. 2008. p. 302–3.
IEEE
[1]
P. R. A. Binetti et al., “Indium phosphide based membrane photodetector for optical interconnects on silicon,” in LEOS 2008. 2008 IEEE LEOS Annual Meeting Conference Proceedings, Newport Beach, CA, USA, 2008, pp. 302–303.
@inproceedings{666383,
  abstract     = {{We have designed, fabricated and characterized an InP-based membrane photodetector on an SOI wafer containing a Si-wiring photonic circuit. New results on RF characterization up to 20 GHz are presented. The detector fabrication is compatible with wafer scale processing steps, guaranteeing compatibility towards future generation electronic IC processing.}},
  author       = {{Binetti, P.R.A. and Leijtens, X.J.M. and de Vries, T. and Oei, Y.S. and Raz, O. and Di Cioccio, L. and Fedeli, J.-M. and Lagahe, C. and Orobtchouk, R. and Van Campenhout, Jan and Van Thourhout, Dries and van Veldhoven, P.J. and Notzel, R. and Smit, M.K.}},
  booktitle    = {{LEOS 2008. 2008 IEEE LEOS Annual Meeting Conference Proceedings}},
  isbn         = {{978-4244-1932-6}},
  language     = {{eng}},
  location     = {{Newport Beach, CA, USA}},
  pages        = {{302--303}},
  title        = {{Indium phosphide based membrane photodetector for optical interconnects on silicon}},
  year         = {{2008}},
}