Indium phosphide based membrane photodetector for optical interconnects on silicon
- Author
- P.R.A. Binetti, X.J.M. Leijtens, T. de Vries, Y.S. Oei, O. Raz, L. Di Cioccio, J.-M. Fedeli, C. Lagahe, R. Orobtchouk, Jan Van Campenhout (UGent) , Dries Van Thourhout (UGent) , P.J. van Veldhoven, R. Notzel and M.K. Smit
- Organization
- Abstract
- We have designed, fabricated and characterized an InP-based membrane photodetector on an SOI wafer containing a Si-wiring photonic circuit. New results on RF characterization up to 20 GHz are presented. The detector fabrication is compatible with wafer scale processing steps, guaranteeing compatibility towards future generation electronic IC processing.
Downloads
-
3603.pdf
- full text
- |
- open access
- |
- |
- 1.01 MB
Citation
Please use this url to cite or link to this publication: http://hdl.handle.net/1854/LU-666383
- MLA
- Binetti, P. R. A., et al. “Indium Phosphide Based Membrane Photodetector for Optical Interconnects on Silicon.” LEOS 2008. 2008 IEEE LEOS Annual Meeting Conference Proceedings, 2008, pp. 302–03.
- APA
- Binetti, P. R. A., Leijtens, X. J. M., de Vries, T., Oei, Y. S., Raz, O., Di Cioccio, L., … Smit, M. K. (2008). Indium phosphide based membrane photodetector for optical interconnects on silicon. LEOS 2008. 2008 IEEE LEOS Annual Meeting Conference Proceedings, 302–303.
- Chicago author-date
- Binetti, P.R.A., X.J.M. Leijtens, T. de Vries, Y.S. Oei, O. Raz, L. Di Cioccio, J.-M. Fedeli, et al. 2008. “Indium Phosphide Based Membrane Photodetector for Optical Interconnects on Silicon.” In LEOS 2008. 2008 IEEE LEOS Annual Meeting Conference Proceedings, 302–3.
- Chicago author-date (all authors)
- Binetti, P.R.A., X.J.M. Leijtens, T. de Vries, Y.S. Oei, O. Raz, L. Di Cioccio, J.-M. Fedeli, C. Lagahe, R. Orobtchouk, Jan Van Campenhout, Dries Van Thourhout, P.J. van Veldhoven, R. Notzel, and M.K. Smit. 2008. “Indium Phosphide Based Membrane Photodetector for Optical Interconnects on Silicon.” In LEOS 2008. 2008 IEEE LEOS Annual Meeting Conference Proceedings, 302–303.
- Vancouver
- 1.Binetti PRA, Leijtens XJM, de Vries T, Oei YS, Raz O, Di Cioccio L, et al. Indium phosphide based membrane photodetector for optical interconnects on silicon. In: LEOS 2008 2008 IEEE LEOS Annual Meeting Conference Proceedings. 2008. p. 302–3.
- IEEE
- [1]P. R. A. Binetti et al., “Indium phosphide based membrane photodetector for optical interconnects on silicon,” in LEOS 2008. 2008 IEEE LEOS Annual Meeting Conference Proceedings, Newport Beach, CA, USA, 2008, pp. 302–303.
@inproceedings{666383, abstract = {{We have designed, fabricated and characterized an InP-based membrane photodetector on an SOI wafer containing a Si-wiring photonic circuit. New results on RF characterization up to 20 GHz are presented. The detector fabrication is compatible with wafer scale processing steps, guaranteeing compatibility towards future generation electronic IC processing.}}, author = {{Binetti, P.R.A. and Leijtens, X.J.M. and de Vries, T. and Oei, Y.S. and Raz, O. and Di Cioccio, L. and Fedeli, J.-M. and Lagahe, C. and Orobtchouk, R. and Van Campenhout, Jan and Van Thourhout, Dries and van Veldhoven, P.J. and Notzel, R. and Smit, M.K.}}, booktitle = {{LEOS 2008. 2008 IEEE LEOS Annual Meeting Conference Proceedings}}, isbn = {{978-4244-1932-6}}, language = {{eng}}, location = {{Newport Beach, CA, USA}}, pages = {{302--303}}, title = {{Indium phosphide based membrane photodetector for optical interconnects on silicon}}, year = {{2008}}, }