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III-V silicon heterogeneous integration for integrated transmitters and receivers

Dries Van Thourhout (UGent) , Jelle Van Campenhout (UGent) , Günther Roelkens (UGent) , Joost Brouckaert (UGent) and Roel Baets (UGent)
Author
Organization
Abstract
Silicon is excellent material for realizing compact nanophotonic ICs operating at wavelengths in the telecom range. Moreover, the desired circuits can be realized with the most advanced equipment available, used also for the fabrication of high-end electronic circuits. Efficient light emission and amplification directly from silicon remains a bottleneck however. Therefore, we developed an alternative approach, based on the heterogeneous integration of III-V epitaxial material and silicon nanophotonic circuits. Following fabrication and planarization of the latter, small unprocessed dies of InP-based epitaxial material are bonded on top. Next, the substrate of these dies is removed down to an etch stop layer. Finally the desired active optoelectronic devices are processed in the remaining Ill-V layers using waferscale processes. The critical alignment between the sources and the underlying nanophotonic circuits is ensured through accurate lithography. In this paper we review some recent devices fabricated through this integration process.
Keywords
WAVE-GUIDES, DIES, PHOTODETECTORS, BENZOCYCLOBUTENE, SUBSTRATE

Citation

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Chicago
Van Thourhout, Dries, Joris Van Campenhout, Günther Roelkens, Joost Brouckaert, and Roel Baets. 2008. “III-V Silicon Heterogeneous Integration for Integrated Transmitters and Receivers.” In Proceedings of the Society of Photo-optical Instrumentation Engineers (spie), ed. CM Greiner and CA Waechter, 6896:X8960–X8960. Bellingham, WA, USA: SPIE-INT SOC OPTICAL ENGINEERING.
APA
Van Thourhout, D., Van Campenhout, J., Roelkens, G., Brouckaert, J., & Baets, R. (2008). III-V silicon heterogeneous integration for integrated transmitters and receivers. In C. Greiner & C. Waechter (Eds.), PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE) (Vol. 6896, pp. X8960–X8960). Presented at the Conference on Integrated Optics - Devices, Materials, and Technology XII, Bellingham, WA, USA: SPIE-INT SOC OPTICAL ENGINEERING.
Vancouver
1.
Van Thourhout D, Van Campenhout J, Roelkens G, Brouckaert J, Baets R. III-V silicon heterogeneous integration for integrated transmitters and receivers. In: Greiner C, Waechter C, editors. PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE). Bellingham, WA, USA: SPIE-INT SOC OPTICAL ENGINEERING; 2008. p. X8960–X8960.
MLA
Van Thourhout, Dries, Joris Van Campenhout, Günther Roelkens, et al. “III-V Silicon Heterogeneous Integration for Integrated Transmitters and Receivers.” Proceedings of the Society of Photo-optical Instrumentation Engineers (spie). Ed. CM Greiner & CA Waechter. Vol. 6896. Bellingham, WA, USA: SPIE-INT SOC OPTICAL ENGINEERING, 2008. X8960–X8960. Print.
@inproceedings{664450,
  abstract     = {Silicon is excellent material for realizing compact nanophotonic ICs operating at wavelengths in the telecom range. Moreover, the desired circuits can be realized with the most advanced equipment available, used also for the fabrication of high-end electronic circuits. Efficient light emission and amplification directly from silicon remains a bottleneck however. Therefore, we developed an alternative approach, based on the heterogeneous integration of III-V epitaxial material and silicon nanophotonic circuits. Following fabrication and planarization of the latter, small unprocessed dies of InP-based epitaxial material are bonded on top. Next, the substrate of these dies is removed down to an etch stop layer. Finally the desired active optoelectronic devices are processed in the remaining Ill-V layers using waferscale processes. The critical alignment between the sources and the underlying nanophotonic circuits is ensured through accurate lithography. In this paper we review some recent devices fabricated through this integration process.},
  author       = {Van Thourhout, Dries and Van Campenhout, Jelle and Roelkens, G{\"u}nther and Brouckaert, Joost and Baets, Roel},
  booktitle    = {PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE)},
  editor       = {Greiner, CM and Waechter, CA},
  isbn         = {978-0-8194-7071-3},
  issn         = {0277-786X},
  language     = {eng},
  location     = {San Jos{\'e}, CA, USA},
  pages        = {X8960--X8960},
  publisher    = {SPIE-INT SOC OPTICAL ENGINEERING},
  title        = {III-V silicon heterogeneous integration for integrated transmitters and receivers},
  volume       = {6896},
  year         = {2008},
}

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